CS730A3RD

Huajing Discrete Devices Silicon N-Channel R ○ Power MOSFET CS730 A3RD General Description： CS730 A3RD, the silicon VDSS N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance 400 V ID 6 A PD(TC=25℃) 75 W 0.75 Ω RDS(ON)Typ and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage Rating Units 400 V 6 A 4.2 A 24 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 200 mJ Avalanche Energy ,Repetitive 26 mJ Avalanche Current 2.3 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 75 W Derating Factor above 25°C 0.60 W/℃ VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ) 3000 V TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ TL MaximumTemperature for Soldering 300 ℃ Continuous Drain Current ID Continuous Drain Current TC = 100 °C a1 Pulsed Drain Current IDM VGS a2 EAS EAR IAR a1 a1 dv/dt a3 PD W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 1 o f 1 0 2013 Huajing Discrete Devices CS730 A3RD R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Rating Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage V GS =0V, I D =250µA ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ IDSS Drain to Source Leakage Current V DS = 400V, VGS = 0V, T a = 25℃ V DS =320V, V GS = 0V, T a = 125℃ IGSS(F) Gate to Source Forward Leakage V DS =0V, V GS= 20V -- -- 10 µA IGSS(R) Gate to Source Reverse Leakage V DS =0V, V GS =-20V -- -- -10 µA Units Min . Typ. Max. 400 -- -- V -- 0.55 -- V/℃ -- -- 1 µA 100 ON Characteristics Symbol Parameter RDS(ON) Drain-to-Source On-Resistance V GS =10V,I D =3.0A VGS(TH) Gate Threshold Voltage V DS = V GS , I D = 250µA Rating Test Conditions Units Min. Typ. Max. -- 0.75 1 Ω 2.0 -- 4.0 V Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Symbol Parameter gfs Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rating Test Conditions V DS =15 I D =3.0A V GS = 0V V DS = 25V f = 1.0MHz Min. Typ. Max. -- 4.5 -- -- 540 -- 68 -- 7.5 Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Rating Test Conditions I D =6.0A V DD = 200V R G = 9.1Ω I D =6.0A V DD =200V V GS = 10V Min. Typ. Max. -- 9 -- -- 11 -- -- 29 -- -- 16 -- -- 14.5 -- 3 -- 6.5 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 2 o f 1 0 Units ns nC 2013 Huajing Discrete Devices CS730 A3RD R ○ Source-Drain Diode Characteristics Symbol Parameter IS Rating Test Conditions Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 6 A ISM Maximum Pulsed Current (Body Diode) -- -- 24 A VSD Diode Forward Voltage I S =6A,VGS =0V -- -- 1.5 V trr Reverse Recovery Time I S =6A,Tj = 25°C -- 388 Reverse Recovery Charge dI F/dt=100A/us, V GS =0V -- 1720 Qrr --- ns nC Pulse width tp≤380µs,δ≤2% Symbol Parameter Typ. Rθ JC Junction-to-Case 1.67 ℃/W Rθ JA Junction-to-Ambient 62.5 ℃/W Units Gate-source Zener diode Symbol Parameter VGSO Gate-source breakdown voltage Rating Test Conditions Min. I GS = ±1mA(Open Drain) Typ. Max. Units 30 V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=6.3A,art TJ=25℃ a3 ：ISD =6A,di/dt ≤100A/us,VDD ≤BVDS, Start TJ=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 3 of 10 2013 Huajing Discrete Devices CS730 A3RD R ○ Characteristics Curve： 10 Pd , Power Dissipation ,Watts Id , Drain Current , Amps 100 100μs 1ms 10ms 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 0.1 DC 72 60 48 36 24 12 0 0.01 1 10 100 Vds , Drain-to-Source Voltage , Volts 1000 Figure 1 Maximun Forward Bias Safe Operating Area 0 50 75 100 Tc , Case Temperature , C 125 150 Figure 2 Maximun Power Dissipation vs Case Temperature 12 8 First: 10V 9V 8V 7V 6V 5V Seventh:4V Id , Drain Current , Amps 10 Id , Drain Current , Amps 25 6 4 2 8 PULSE TEST Tc = 25℃ First 6 4 Seventh 2 0 0 25 50 75 100 Tc,Case Temperature,C 125 150 Thermal Impedance, Normalized Figure 3 Maximum Continuous Drain Current vs Case Temperature 1 0 5 10 15 Vds , Drain-to-Source Voltage , Volts 20 Figure 4 Typical Output Characteristics 50% 20% 0.1 10% 5% PDM 2% 0.01 Single pulse 0.001 1.00E-05 t1 t2 1% NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 1.00E-04 1.00E-03 1.00E-02 1.00E-01 Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . 1.00E+00 Page 4 of 10 1.00E+01 2013 Huajing Discrete Devices R ○ CS730 A3RD Idm , Peak Current , Amps 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS:  150 − TC  I = I 25   125   10 VGS=10V 1 1.00E-05 1.00E-04 1.00E-03 t 1.00E-02 1.00E-01 Pulse Width , Seconds 1.00E+01 1.00E+00 Figure 6 Maximun Peak Current Capability 100 4 Rds(on), Drain to Source ON Resistance , Ohms Id , Drain Current ，Amps PULSED TEST VDS=10V 10 1 +150℃ +25℃ PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 3 ID=6A ID=3A 2 ID=1.5A 1 -55℃ 0 0.1 2 4 6 8 Vgs , Gate to Source Voltage，volts 10 Figure 7 Typical Transfer Characteristics figure 9 8 10 12 14 Vgs , Gate to Source Voltage ， Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 2.5 PULSED TEST Tc =25 ℃ Rds(on), Drain to Source ON Resistance, Nomalized Rds(on), Drain to Source ON Resistance , Ohms 2.5 4 2 VGS=10V 1.5 VGS=20V 1 0.5 0 0 5 10 15 Id , Drain Current,Amps 20 Figure 9 Typical Drain to Source ON Resistance vs Drain Current 25 2 6 VGS=10V ID=3.0A 1.5 1 0.5 0 -100 -50 0 50 100 Tj, Junction temperature，C 150 Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 5 of 10 2013 200 Huajing Discrete Devices 1.1 1 0.9 0.8 0.7 0.6 VGS=0V ID=250μA 0.5 0.4 -75 -50 -25 1 0.9 VGS=0V ID=250μA -50 0 50 100 Tj, Junction temperature,C 150 200 Figure 12 Typical Breakdown Voltage vs Junction Temperature 12.5 1000 Vgs , Gate to Source Voltage ,Volts 10000 Ciss 100 Coss Crss VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 10 1 VDD=200V ID=6A Tc =25℃ 10 7.5 5 2.5 0 0.1 1 10 Vds , Drain - Source Voltage , Volts 100 0 Figure 13 Typical Capacitance vs Drain to Source Voltage 100 5 10 Qg , Total Gate Charge , nC 15 20 Figure 14 Typical Gate Charge vs Gate to Source Voltage 100 PULSE VGS=0V TEST 10 Id , Drain Current , Amps Capacitance , pF 1.1 0.8 -100 0 25 50 75 100 125 150 175 Tj, Junction temperature , C Figure 11 Typical Theshold Voltage vs Junction Temperature Isd, Reverse Drain Current , Amps CS730 A3RD 1.2 Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs(th),Threshold Voltage, Nomalized 1.2 R ○ 150℃ 25℃ 1 STARTING Tj = 25℃ 10 STARTING Tj = 150℃ 1 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit 0.1 0.4 0.6 0.8 1 1.2 Vsd , Source - Drain Voltage , Volts Figure 15 Typical Body Diode Transfer Characteristics 1.4 0.1 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 tav,Time in Avalanche,Seconds Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 6 of 10 2013 Huajing Discrete Devices R ○ CS730 A3RD TestCircuitandWaveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 7 of 10 2013 Huajing Discrete Devices R ○ W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . CS730 A3RD Page 8 of 10 2013 Huajing Discrete Devices R ○ CS730 A3RD Package Information： Items Values(mm) MIN MAX A 6.30 6.80 B 5.20 6.20 C 2.10 2.50 C1 0.85 1.25 D 0.40 0.60 E 0.50 0.70 F 0.40 0.60 G 0.70 0.90 H 1.60 2.40 L 7.70 9.80 M 5.10 5.50 N 2.09 2.49 TO-251 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 9 of 10 2013 Huajing Discrete Devices CS730 A3RD R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb ≤0.1% Limit Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2013