CS7N80FA9

Silicon N-Channel Power MOSFET R ○ CS7N80F A9 General Description： 800 V ID 7 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(T C=25℃) 48 W which reduce the conduction loss, improve switching RDS(ON)Typ 1.5 Ω CS7N80F A9, the silicon VDSS N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤1.8Ω ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test Applications： ATX Power、LED Power. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage ID IDM a1 a2 EAR IAR a1 a1 dv/dt Units 800 V Continuous Drain Current 7 A Continuous Drain Current T C = 100 °C 4 A 28 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 150 mJ Avalanche Energy ,Repetitive 20 mJ 2 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 48 W 0.38 W/℃ 150，–55 to 150 ℃ 300 ℃ Pulsed Drain Current VGS EAS Rating Avalanche Current a3 PD Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 1 5 V0 1 CS7N80F A9 R ○ Electrical Characteristics（Tc= 25 ℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient Drain to Source Leakage Current IDSS Rating Min. Typ. Max. 800 -- -- ID=250uA,Reference25℃ -- 0.6 -- VDS = 800V, V GS= 0V, Ta = 25℃ VDS =640V, V GS= 0V, -- -- 25 Ta = 125℃ -- -- 250 Units V V/℃ µA IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =3.5A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 1.5 1.8 Ω 4.0 V 2.0 Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Trans conductance VDS=15V, ID =3.5A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 7.5 -- -- 1350 -- -- 115 -- -- 12 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =7A VDD = 400V VGS = 10V RG =12Ω ID =7A V DD =400V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 15 -- -- 25 -- -- 51 -- -- 31 -- -- 34 -- 6 -- -- 14 -- Pag e 2 of 1 0 Units ns nC 2 0 1 5 V0 1 CS7N80F A9 R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Typ. Continuous Source Current (Body Diode) -- -- 7 A ISM Maximum Pulsed Current (Body Diode) -- -- 28 A VSD Diode Forward Voltage IS =7A,V GS =0V -- -- 1.5 V trr Reverse Recovery Time IS =7A,Tj = 25°C -- 186 ns Reverse Recovery Charge dIF /dt=100A/us, V GS=0V -- 878 nC Qrr Max. Units Min. Pulse width tp≤300µs,δ≤2% Symbol Parameter Typ. R θJC Junction-to-Case 2.6 ℃/W R θJA Junction-to-Ambient 100 ℃/W Units a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=5.5A, Start T J =25℃ a3 ：ISD =7A,di/dt ≤100A/us,V DD ≤BV DS, Start TJ =25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 1 0 2 0 1 5 V0 1 CS7N80F A9 R ○ Characteristics Curve： Pd , Power Dissipation ,Watts Id , Drain Current , Amps 100 10 100μs 1ms 1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 0.1 DC 100 1000 10 Vds , Drain-to-Source Voltage , Volts 10000 Figure 1 Maximum Forward Bias Safe Operating Area 32 16 0 0 0.01 1 48 25 125 150 Figure 2 Maximum Power Dissipation vs Case Temperature 7.5 14 VGS=10V 12 Id , Drain Current ,Amps 50 75 100 Tc , Case Temperature , C Id , Drain Current , Amps 6 4.5 3 1.5 10 VGS=9V 8 6 VGS=7V VGS=8V 4 2 VGS=6V 0 0 0 25 50 75 100 Tc , Case Temperature ,C 125 150 Figure 3 Maximum Continuous Drain Current vs Case Temperature 0 5 10 15 20 25 30 Vds , Drain-to-Source Voltage , Volts 35 Figure 4 Typical Output Characteristics Thermal Impedance, Normalized 1 50% 20% 10% PDM 0.1 0.01 0.00001 5% t1 t2 2% NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 1% Single pulse 0.0001 0.001 0.01 Rectangular Pulse Duration,Seconds 0.1 1 Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 1 5 V0 1 CS7N80F A9 R ○ Idm , Peak Current , Amps 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS:  150 − TC  I = I 25   125   10 VGS=10V 1 1.00E-05 1.00E-04 1.00E-03 t 1.00E-02 1.00E-01 Pulse Width , Seconds 1.00E+00 1.00E+01 Figure 6 Maximum Peak Current Capability 6 12 PULSED TEST VDS=30V Rds(on), Drain to Source ON Resistance , Ohms Id , Drain Current ,Amps 14 10 8 6 4 PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 4.5 ID= 7A ID=3 .5A ID= 1.75A 3 1.5 2 0 0 0 2 4 6 8 10 Vgs , Gate to Source Voltage ， Volts 4 12 14 Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current Figure 7 Typical Transfer Characteristics 3 2.0 Rds(on), Drain to Source ON Resistance, Nomalized PULSED TEST Tc =25 ℃ Rds(on), Drain to Source ON Resistance , Ohms 8 10 12 6 Vgs , Gate to Source Voltage ，Volts 1.8 VGS=10V 1.6 1.4 1.2 1.0 0 1 2 3 4 Id , Drain Current , Amps 5 Figure 9 Typical Drain to Source ON Resistance vs Drain Current 6 2.5 PULSED TEST VGS=10V ID=3.5A 2 1.5 1 0.5 0 -100 -50 0 50 100 Tj, Junction temperature ,C 150 Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 5 of 1 0 2 0 1 5 V0 1 200 1.1 1 0.9 0.8 VGS=0V ID=250μA -50 0 50 100 Tj, Junction temperature , C 150 1.05 1 0.95 VGS=0V ID=250μA 10000 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction temperature , C Figure 12 Typical Breakdown Voltage vs Junction Temperature 15 Vgs , Gate to Source Voltage ,Volts VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 1000 -75 200 Figure 11 Typical Theshold Voltage vs Junction Temperature Ciss 100 Coss 10 Crss 1 12 VDS=400V ID= 7A 9 6 3 0 0.1 1 10 Vds , Drain - Source Voltage , Volts 100 0 Figure 13 Typical Capacitance vs Drain to Source Voltage 6 8 16 24 Qg , Total Gate Charge , nC 32 40 Figure 14 Typical Gate Charge vs Gate to Source Voltage 100 5 Id , Drain Current , Amps Capacitance , pF 1.1 0.9 0.7 -100 Isd, Reverse Drain Current , Amps R ○ 1.15 1.2 Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs(th),Threshold Voltage, Nomalized CS7N80F A9 4 +150℃ 3 +25℃ 2 -55℃ 1 VGS=0V 0 0.4 0.5 0.6 0.7 0.8 0.9 1 Vsd , Source - Drain Voltage , Volts 1.1 Figure 15 Typical Body Diode Transfer Characteristics STARTING Tj = 25℃ STARTING Tj = 150℃ 10 1 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit 0.1 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 tav , Time in Avalanche , Seconds Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 6 of 1 0 2 0 1 5 V0 1 CS7N80F A9 R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 1 0 2 0 1 5 V0 1 CS7N80F A9 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 8 of 1 0 2 0 1 5 V0 1 CS7N80F A9 R ○ Package Information Items Values(mm) MIN MAX A 9.60 10.40 B 15.40 16.20 B1 8.90 9.50 C 4.30 4.90 C1 2.10 3.00 D 2.40 3.00 E 0.60 1.00 F 0.30 0.60 G 1.12 1.42 3.40 3.80 2.00 2.40 12.00 14.00 6.30 7.70 N 2.34 2.74 Q 3.15 3.55 3.00 3.30 H L TO-220F Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 1 0 2 0 1 5 V0 1 CS7N80F A9 R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Limit Pb Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 5 V0 1