CS8N60A8H

Huajing Discrete Devices Silicon N-Channel R ○ Power MOSFET CS8N60 A8H General Description： CS8N60 A8H, the VDSS silicon N-channel Enhanced ID 600 V 8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 110 W which reduce the conduction RDS(ON)Typ 0.8 Ω loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤1.2Ω) l Low Gate Charge (Typical Data:29nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage Units 600 V 8 A Continuous Drain Current TC = 100 °C 5.5 A Pulsed Drain Current 32 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 600 mJ Avalanche Energy ,Repetitive 60 mJ Avalanche Current 3.5 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 110 W Derating Factor above 25°C 0.88 W/℃ 150，–55 to 150 ℃ 300 ℃ Continuous Drain Current ID a1 IDM VGS a2 EAS EAR IAR Rating a1 a1 dv/dt a3 PD TJ，Tstg Operating Junction and Storage Temperature Range TL MaximumTemperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2012 Huajing Discrete Devices CS8N60 A8H R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter VDSS Drain to Source Breakdown Voltage V GS =0V, I D =250µA ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ Drain to Source Leakage Current V DS = 600V, VGS = 0V, T a = 25℃ V DS =480V, V GS = 0V, IDSS Rating Test Conditions Units Min. Typ. Max. 600 -- -- V -- 0.74 -- V/℃ -- -- 1 T a = 125℃ -- -- 100 µA IGSS(F) Gate to Source Forward Leakage V GS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage V GS =-30V -- -- -100 nA ON Characteristics Symbol Parameter RDS(ON) Drain-to-Source On-Resistance V GS =10V,I D =4.0A VGS(TH) Gate Threshold Voltage V DS = V GS , I D = 250µA Rating Test Conditions Units Min. Typ. Max. -- 0.8 1.2 Ω 4.0 V 2.0 Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Symbol Parameter gfs Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rating Test Conditions V DS =15V, I D =4A V GS = 0V V DS = 25V f = 1.0MHz Min. Typ. Max. -- 7 -- -- 1253 -- -- 115 -- -- 15 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Rating Test Conditions I D =8.0A V DD = 300V V GS = 10V RG =9.1Ω I D =8.0A V DD =300V V GS = 10V Min. Typ. Max. -- 13 -- -- 15 -- -- 41 -- -- 21 -- -- 29 -- 7 -- -- 12 -- W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 2 of 10 Units ns nC 2012 Huajing Discrete Devices CS8N60 A8H R ○ Source-Drain Diode Characteristics Symbol Parameter IS Rating Test Conditions Typ. Continuous Source Current (Body Diode) -- -- 8 A ISM Maximum Pulsed Current (Body Diode) -- -- 32 A VSD Diode Forward Voltage I S =8.0A,V GS =0V -- -- 1.5 V trr Reverse Recovery Time I S =8.0A,T j = 25°C -- 406 -- ns Reverse Recovery Charge dI F/dt=100A/us, V GS =0V -- 1895 -- nC Qrr Max. Units Min. Pulse width tp≤380µs,δ≤2% Symbol Parameter Rθ JC Junction-to-Case Rθ JA Junction-to-Ambient Typ. Units 1.14 ℃/W 62 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=10.9A, Start TJ=25℃ a3 ：ISD =8A,di/dt ≤100A/us,VDD ≤BVDS, Start TJ=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 3 o f 1 0 2012 Huajing Discrete Devices CS8N60 A8H R ○ Characteristics Curve： 140 Pd , Power Dissipation ,Watts Id , Drain Current , Amps 100 10 100μs 1ms 1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 0.1 TJ=MAX RATED TC=25℃ Single Pulse DC 120 100 80 60 40 20 0 0 0.01 1 10 100 1000 Vds , Drain-to-Source Voltage , Volts 10000 Figure 1 Maximun Forward Bias Safe Operating Area 10 25 50 75 100 Tc , Case Temperature , C 125 150 Figure 2 Maximun Power Dissipation vs Case Temperature 14 8 Id , Drain Current , Amps Id , Drain Current ,Amps VGS=10V 12 6 4 2 VGS=9V 10 8 4 VGS=6V 2 0 VGS=7V VGS=8V 6 0 0 25 50 75 100 125 150 Tc , Case Temperature ,C Figure 3 Maximum Continuous Drain Current vs Case Temperature 0 5 10 15 20 25 30 Vds , Drain-to-Source Voltage , Volts 35 Figure 4 Typical Output Characteristics Thermal Impedance, Normalized 1 50% 20% 10% PDM 0.1 0.01 0.00001 5% t1 t2 2% NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 1% Single pulse 0.0001 0.001 0.01 Rectangular Pulse Duration,Seconds 0.1 1 Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 4 o f 1 0 2012 Huajing Discrete Devices R ○ CS8N60 A8H Idm , Peak Current , Amps 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS:  150 − TC  I = I 25   125   10 VGS=10V 1 1.00E-05 1.00E-04 1.00E-03 t 1.00E-02 1.00E-01 Pulse Width , Seconds 1.00E+00 1.00E+01 Figure 6 Maximun Peak Current Capability 4 PULSED TEST VDS=30V 12 Rds(on), Drain to Source ON Resistance , Ohms Id , Drain Current ,Amps 14 10 8 6 4 PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 3 ID= 8A ID= 4A ID= 2A 2 1 2 0 0 0 2 4 6 8 10 Vgs , Gate to Source Voltage ， Volts 4 12 14 Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current Figure 7 Typical Transfer Characteristics 1.2 3 Rds(on), Drain to Source ON Resistance, Nomalized PULSED TEST Tc =25 ℃ Rds(on), Drain to Source ON Resistance , Ohms 6 8 10 12 Vgs , Gate to Source Voltage ，Volts 1.1 1 VGS=10V 0.9 0.8 0.7 0 1 2 3 4 Id , Drain Current , Amps 5 Figure 9 Typical Drain to Source ON Resistance vs Drain Current 6 2.5 PULSED TEST VGS=10V ID=2.5A 2 1.5 1 0.5 0 -100 -50 0 50 100 Tj, Junction temperature ,C 150 Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 5 o f 1 0 2012 200 1.2 1.1 1 0.9 0.8 VGS=0V ID=250μA -50 0 50 100 Tj, Junction temperature , C 150 1.1 1.05 1 0.95 15 Vgs , Gate to Source Voltage ,Volts VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 2000 1500 Coss 500 Ciss 0 Crss 0 10 0 25 50 75 100 125 150 175 Tj, Junction temperature , C Figure 12 Typical Breakdown Voltage vs Junction Temperature 2500 1000 VGS=0V ID=250μA -75 -50 -25 200 Figure 11 Typical Theshold Voltage vs Junction Temperature 20 30 40 50 Vds , Drain - Source Voltage , Volts 12 VDS=480V ID= 8A 9 6 3 0 60 0 Figure 13 Typical Capacitance vs Drain to Source Voltage 6 10 20 30 Qg , Total Gate Charge , nC 40 50 Figure 14 Typical Gate Charge vs Gate to Source Voltage 100 5 Id , Drain Current , Amps Isd, Reverse Drain Current , Amps CS8N60 A8H 0.9 0.7 -100 Capacitance , pF R ○ 1.15 Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs(th),Threshold Voltage, Nomalized Huajing Discrete Devices 4 3 +150℃ +25℃ 2 -55℃ 1 VGS=0V 0.5 0.6 0.7 0.8 0.9 1 Vsd , Source - Drain Voltage , Volts STARTING Tj = 150℃ 10 1 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit 0 0.4 STARTING Tj = 25℃ 1.1 Figure 15 Typical Body Diode Transfer Characteristics 0.1 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 tav , Time in Avalanche , Seconds Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 6 o f 1 0 2012 Huajing Discrete Devices R ○ CS8N60 A8H TestCircuitandWaveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 7 o f 1 0 2012 Huajing Discrete Devices R ○ CS8N60 A8H W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 8 o f 1 0 2012 Huajing Discrete Devices R ○ CS8N60 A8H Package Information： Items Values(mm) MIN MAX A 10.10 10.50 B 15.0 16.0 B1 8.90 9.50 C 4.30 4.80 C1 2.30 3.00 D 1.20 1.40 E 0.70 0.90 F 0.35 0.55 G 1.17 1.37 H 3.30 3.80 L 12.70 14.70 N 2.34 2.74 Q 2.40 3.00 3.70 3.90 TO-220AB Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 9 o f 1 0 2012 Huajing Discrete Devices R ○ CS8N60 A8H The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb ≤0.1% Limit Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 1 0 o f 1 0 2012