CS9N20A4R

Silicon N-Channel Power MOSFET R ○ CS9N20 A4R General Description ： 200 V ID 9 A VDMOSFETs, is obtained by the self-aligned planar Technology P D(TC=25℃) 75 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.24 Ω CS9N20 A4R, the silicon N-channel Enhanced VDSS performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤0.28Ω)  Low Gate Charge (Typical Data: 12.6nC)  Low Reverse transfer capacitances(Typical: 8.8pF)  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage ID a1 IDM VGS EAS a2 dv/dt a3 PD Rating Units 200 V Continuous Drain Current TC = 25 °C 9 A Continuous Drain Current TC = 100 °C 5.4 A Pulsed Drain Current TC = 25 °C 36 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 200 mJ Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation TC = 25 °C 75 W 0.60 W/℃ 150，–55 to 150 ℃ 300 ℃ Derating Factor above 25°C TJ，Tstg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 1 of 10 2 0 1 8 V0 1 CS9N20 A4R R ○ Electrical Characteristics（TJ= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ IDSS Drain to Source Leakage Current VDS =200V, VGS= 0V, TJ = 25℃ VDS =160V, VGS= 0V, TJ = 125℃ IGSS(F) Gate to Source Forward Leakage IGSS(R) Gate to Source Reverse Leakage Rating Unit s Min. Typ. Max. 200 -- -- -- 0.25 -- V/℃ -- -- 1 µA -- -- 100 µA VGS =+30V -- -- 100 nA VGS =-30V -- -- -100 nA V ON Characteristics Symbol Parameter Test Conditions RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=4.5A VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA Rating Units Min. Typ. Max. -- 0.24 0.28 Ω 2.0 -- 4.0 V Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions gfs Forward Trans conductance VDS=15V, ID =4.5A Rg Gate resistance f = 1.0MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 5 -- Units S Ω 2.6 -- 550 -- -- 94 -- -- 8.8 -- pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =9A VDD = 100V R G =10Ω ID =9A VDD =160V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 10.9 -- -- 3.5 -- -- 19.2 -- -- 4.5 -- -- 12.6 -- -- 3.1 -- -- 5.8 -- P ag e 2 of 10 Units 2 0 1 8 V0 1 ns nC CS9N20 A4R R ○ Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Maximum Pulsed Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Test Conditions Rating Units Min. Typ. Max. -- -- 9 A -- -- 36 A -- -- 1.5 V -- 112.7 -- ns -- 476 -- nC -- 8 -- A TC = 25 °C IS=9.0A,VGS=0V IS=9.0A,Tj = 25℃ Qrr Reverse Recovery Charge IRRM Reverse Recovery Current dIF/dt=100A/us, VGS=0V Pulse width tp≤300µs,δ≤2% Symbol Parameter Max. Units Rθ JC Junction-to-Case 1.67 ℃/W Rθ JA Junction-to-Ambient 100 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10mH, I D=6.4A, Start TJ =25℃ a3 ：ISD =9A,di/dt ≤100A/us,V DD≤BV DS, Start TJ=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 3 of 10 2 0 1 8 V0 1 CS9N20 A4R R ○ Characteristics Curve： Figure 1 Maximum Forward Bias Safe Operating Area Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 2 Maximum Power dissipation vs Case Temperature Figure 4 Typical Output Characteristics Figure 5 Maximum Effective Thermal Impedance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 4 of 10 2 0 1 8 V0 1 CS9N20 A4R Figure 6 Typical Transfer Characteristics Figure 8 Typical Drain to Source ON Resistance vs Drain Current R ○ Figure 7 Typical Body Diode Transfer Characteristics Figure 9 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 5 of 10 2 0 1 8 V0 1 CS9N20 A4R Figure 10 Typical Theshold Voltage vs Junction Temperature Figure 12 Typical Capacitance vs Drain to Source Voltage R ○ Figure 11 Typical Breakdown Voltage vs Junction Temperature Figure 13 Typical Gate Charge vs Gate to Source Voltage W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 6 of 10 2 0 1 8 V0 1 CS9N20 A4R R ○ Test Circuit and Waveform： Figure 14. Gate Charge Test Circuit Figure 16. Resistive Switching Test Circuit Figure 15. Gate Charge Waveforms Figure 17. Resistive Switching Waveforms W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 7 of 10 2 0 1 8 V0 1 CS9N20 A4R Figure 18. Diode Reverse Recovery Test Circuit Figure20.Unclamped Inductive Switching Test Circuit R ○ Figure 19. Diode Reverse Recovery Waveform Figure21.Unclamped Inductive Switching Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 8 of 10 2 0 1 8 V0 1 CS9N20 A4R R ○ Package Information ： Items Values(mm) MIN MAX A 6.30 6.90 A1 0 0.13 B 5.70 6.30 C 2.10 2.50 D 0.30 0.60 E1 0.60 0.90 E2 0.70 1.00 F 0.30 0.60 G 0.70 1.20 L1 9.60 10.50 L2 2.70 3.10 H 0.60 1.00 M 5.10 5.50 N 2.09 2.49 R 0.3 T 1.40 1.60 Y 5.10 6.30 TO-252 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 9 of 10 2 0 1 8 V0 1 CS9N20 A4R R ○ The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Compound Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ Limit Cd ≤ 0.01% ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 8 V0 1