GN10N65A4

Silicon N-Channel Power MOSFET R ○ GN10N65 A4 General Description： VDSS 650 V ID 10 A VDMOSFETs, is obtained by the double-shield Technology PD(TC=25℃) 110 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.9 Ω GN10N65 A4, the silicon N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Superior switching performance l Low on resistance(Rdson≤1.1Ω) l Low gate charge (Typical Data:21.3nC) l Low reverse transfer capacitances(Typical:7.4pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM a1 VGS EAS a2 dv/dt a3 PD Rating Units Drain-to-Source Voltage 650 V Continuous Drain Current 10 A Continuous Drain Current T C = 100 °C 4.4 A Pulsed Drain Current 40 A Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy 100 mJ Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 110 W Derating Factor above 25°C 0.88 W/℃ 150，–55 to 150 ℃ 300 ℃ TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 1 7 V0 1 GN10N65 A4 R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ IDSS Drain to Source Leakage Current VDS =650V, V GS= 0V, Ta = 25℃ VDS =520V, V GS= 0V, Ta = 125℃ IGSS(F) Gate to Source Forward Leakage IGSS(R) Gate to Source Reverse Leakage Rating Unit s Min. Typ. Max. 650 -- -- V -- 0.7 -- V/℃ -- -- 1 µA -- -- 100 µA VGS =+20V -- -- 100 nA VGS =-20V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =3.5A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 0.9 1.1 Ω 2.0 -- 4.0 V Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Transconductance VDS=20V, ID =3.5A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 8 -- -- 1420 -- -- 94.2 -- -- 7.4 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =7A VDD = 325V RG =10Ω VGS =10V ID =7A V DD =520V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 20.1 -- -- 26.4 -- -- 38.4 -- -- 18.3 -- -- 21.3 -- -- 5.1 -- -- 6.5 -- Pag e 2 of 1 0 Units 2 0 1 7 V0 1 ns nC GN10N65 A4 R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 10 A ISM Maximum Pulsed Current (Body Diode) -- -- 40 A VSD Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 328 -- ns -- 1720 -- nC -- 10.5 -- A IS =7A,V GS =0V IS =7A,Tj = 25℃ Qrr Reverse Recovery Charge IRRM Reverse Recovery Current dIF /dt=100A/us, VGS=0V Pulse width tp≤300µs,δ≤2% Symbol Parameter Max. Units R θ JC Junction-to-Case 1.1 ℃/W R θ JA Junction-to-Ambient 100 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=20mH, ID=3.2A, Start TJ=25℃ a3 ：ISD =7A,di/dt ≤100A/us,VDD≤BVDS, Start T J=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 1 0 2 0 1 7 V0 1 GN10N65 A4 R ○ Characteristics Curve： Figure 1 Maximum Power Dissipation vs Case Temperature Figure 2 Typical Output Characteristics Figure 3 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 1 7 V0 1 GN10N65 A4 Figure 4 Typical Transfer Characteristics Figure 6 Typical Drain to Source ON Resistance vs Drain Current R ○ Figure 5 Typical Body Diode Transfer Characteristics Figure 7 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 5 of 1 0 2 0 1 7 V0 1 GN10N65 A4 Figure 8 Drain to Source ON Resistance vs Gate-to-Source Voltage Figure 10 Typical Capacitance vs Drain to Source Voltage R ○ Figure 9 Typical Breakdown Voltage vs Junction Temperature Figure 11 Typical Gate Charge vs Gate to Source Voltage W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 6 of 1 0 2 0 1 7 V0 1 GN10N65 A4 R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 1 0 2 0 1 7 V0 1 GN10N65 A4 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 8 of 1 0 2 0 1 7 V0 1 GN10N65 A4 R ○ Package Information Items Values(mm) MIN MAX A 6.30 6.90 A1 0 0.13 B 5.70 6.30 C 2.10 2.50 D 0.30 0.60 E1 0.60 0.90 E2 0.70 1.00 F 0.30 0.60 G 0.70 1.00 L1 9.60 10.30 L2 2.70 3.10 H 0.60 1.00 M 5.10 5.50 N 2.09 2.49 R 0.3 T 1.40 1.60 Y 5.10 6.30 TO-252 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 1 0 2 0 1 7 V0 1 GN10N65 A4 R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb Hg Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ Limit Cd ≤ 0.01% ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 7 V0 1