HGE055NE4A

Silicon N-Channel Power MOSFET R ○ HGE055NE4A General Description： VDSS 45 V ID 18 A VDMOSFETs, is obtained by the high density Trench technology PD(T a=25℃) 3.1 W which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 4.4 mΩ performance and enhance the avalanche energy. The transistor RDS(ON) Typ@Vgs=4.5V 6.5 mΩ HGE055NE4A, the silicon N-channel Enhanced can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOP8, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤5.5mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： l Power switch circuit of adaptor and charger. l Synchronus Rectification in DC/DC Converters Absolute（Ta= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM Rating Units Drain-to-Source Voltage 45 V Continuous Drain Current 18 A 11.9 A 72 A Gate-to-Source Voltage ±18 V Single Pulse Avalanche Energy 115.5 mJ 3.1 W 150，–55 to 150 ℃ Continuous Drain Current T C = 100 °C a1 VGS EAS a2 Pulsed Drain Current PD Power Dissipation TJ，T stg Operating Junction and Storage Temperature Range W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 1 9 V0 1 HGE055NE4A R ○ Electrical Characteristics（T a= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA Drain to Source Leakage Current VDS =450V, V GS= 0V, TA = 25℃ VDS =36V, V GS= 0V, IDSS Rating Min. Typ. Max. 45 -- -- -- -- 1 TA = 125℃ -- -- 100 Units V µA IGSS(F) Gate to Source Forward Leakage VGS =+18V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-18V -- -- -100 nA ON Characteristics Symbol Parameter R DS(ON) Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage Test Conditions Rating Units Min. Typ. Max. VGS=10V,ID =18A -- 4.4 5.5 mΩ VGS=4.5V,ID =14A -- 6.5 8.2 mΩ 1.0 1.75 2.5 V VDS = V GS , ID = 250µA Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions Rg Gate resistance f=1MHz C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 2 -- -- 1156 -- -- 493 -- -- 32 -- Units Ω pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions VDD =25 V, ID = 19A, VG =10 V RG = 3Ω VGS =10V,VDD =25V, ID =19A W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 10.4 -- -- 6 -- -- 30.8 -- -- 6.4 -- -- 24 -- -- 3.2 -- -- 6.7 -- Pag e 2 of 1 0 Units 2 0 1 9 V0 1 ns nC HGE055NE4A R ○ Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Maximum Pulsed Current (Body Diode) VSD Diode Forward Voltage trr Qrr Test Conditions Rating Units Min. Typ. Max. -- -- 18 A -- -- 72 A IS=18A,VGS =0V -- -- 1.2 V Reverse Recovery Time di/dt=100A/us -- 41.9 ns Reverse Recovery Charge IF=20A -- 40 nC T C = 25 °C Pulse width tp≤300µs,δ≤2% Symbol Parameter R θ JA Junction-to-Ambient Max. Units 40 ℃/W Notes： a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=0.5mH, ID=21.5A, Start T J =25℃ a3 ：Recommend soldering temperature defined by IPC/JEDEC J-STD 020 a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 1 0 2 0 1 9 V0 1 HGE055NE4A R ○ Characteristics Curve： W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 1 9 V0 1 HGE055NE4A R ○ 100 100 10 Is,Source Current[A] I D,Drain Current[A] Note: 1.VDS=5V 2.250us Pulse Test Tj=150℃ 1 Tj=25℃ 10 Tj=150℃ Tj=25℃ 1 0.1 0.1 0 0.01 1 1.5 2 2.5 3 3.5 4 0.6 1.6 1.2 VGS=10V ID=18A RDS(on),(Normalized) Drain-to-Source On Resistance 7.0 VGS = 4.5V 5.0 V GS = 10V 4.0 1 1.8 PULSED TEST Tj = 25℃ 6.0 0.8 Figure 7 Typical Body Diode Transfer Characteristics Figure 6 Typical Transfer Characteristics RDS(on),Drain-to-Source On Resistance,mΩ 0.4 VSD， Source-to-Drain Voltage[V] VGS,Gate-to-Source Voltage[V] 8.0 0.2 3.0 1.4 VGS=4.5V ID=14A 1.2 1 0.8 0.6 0.4 0.2 2.0 0 5 10 15 I D ,Drain Current,A 20 0 -50 0 50 100 150 TJ,Junction Temperature(℃ ) Figure 8. Drain-to-Source On Resistance vs Drain Current Figure 9. Normalized On Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 5 of 1 0 2 0 1 9 V0 1 HGE055NE4A W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 6 of 1 0 2 0 1 9 V0 1 HGE055NE4A R ○ Test Circuit and Waveform Figure 14. Gate Charge Test Circuit Figure 16. Resistive Switching Test Circuit Figure 15. Gate Charge Waveforms Figure 17. Resistive Switching Waveforms W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 1 0 2 0 1 9 V0 1 HGE055NE4A Figure 18. Diode Reverse Recovery Test Circuit Figure20.Unclamped Inductive Switching Test Circuit R ○ Figure 19. Diode Reverse Recovery Waveform Figure21.Unclamped Inductive Switching Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 8 of 1 0 2 0 1 9 V0 1 HGE055NE4A R ○ Package Information： D θ3 c b e Items A1 A2 A E1 E L Values(mm) MIN MAX A 1.30 1.80 A1 0.10 0.25 A2 1.30 1.50 E 5.80 6.20 E1 3.80 4.00 D 4.80 5.00 L 0.40 0.90 e b 1.27 TYP 0.37 c θ3 0.47 0.20 TYP 0° 8° SOP8 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 1 0 2 0 1 9 V0 1 HGE055NE4A R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤ ≤ ≤ 0.1% 0.1% 0.01% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ Limit ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 9 V0 1