IP Semiconductor Co., Ltd.
IPS612 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. High current density due to double mesa technology SIPOS and Glass passivation technology used has reliable operation up to 125℃ junction temperature. Low Igt parts available. IPS612 series are suitable for general purpose applications, a high gate sensitivity is required.
IPS612-xxB
MAIN FEATURES
Symbol
IT(RMS) IT(AV) VDRM / VRRM VTM
Value
12 8 600 ≤ 1.6
Unit
A A V V
TO-220B
ABSOLUTE MAXIMUM RATINGS
Parameter
RMS on–state current (Tc = 105℃, 180º conduction half sine wave) Average on–state current (Tc = 105℃, 180º conduction half sine wave) Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage Tj = 25℃ Tj = 25℃ Tj = 25℃ Tj = 25℃
Symbol
IT(RMS) IT(AV) Tstg Tj VDRM VRRM VDSM VRSM ITSM I²t dI/dt IGM PG(AV)
Value
12 8 -40 to +150 -40 to +110 600 600 700 700 140 98 50 4 1
Unit
A A
℃
V
V A A²s A/us A W
One cycle Non Repetitive surge current ( Half Cycle, 50Hz) I²t Value for fusing
(tp = 10ms, Half Cycle)
Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃) Peak gate current Average gate power dissipation
tp = 20us, Tj = 125℃
Tj = 125℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1
IPS612-xxB
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
IPS612-xxB
05 IGT VGT Required DC gate current to trigger Required DC voltage to trigger (anode supply = 6V, resistive load) DC gate voltage not to trigger MAX MAX 5 1.3 15 15 mA V
Symbol
Test Condition
Unit
VGD IL IH dV/dt
(Tj = 110℃, VDRM = rated value)
IG = 1.2 IGT Holding current VD = 67% VDRM gate open Tj = 125 ℃
MAX MAX MAX MIN 30 15 40
0.2 60 30 200
V mA mA V/us
STATIC CHARACTERISTICS
Symbol
VTM
Test Conditions
ITM = 24A, tp = 380uS VD = VDRM Tj = 25℃ Tj = 25℃ Tj = 125℃
Value (MAX)
1.6 5 2
Unit
V uA mA
IDRM / IRRM VR = VRRM
THERMAL RESISTANCES
Symbol
Rth (j – c)
Parameter
Junction to case TO-220B
Value
2.8
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPS612-xxB
PACKAGE MECHANICAL DATA
TO-220B
Millimeters Min
A B C C2 C3 D E F G H L1 L2 L3 V 1.14 2.65 40º 4.4 0.61 0.46 1.23 2.4 8.6 9.8 6.2 4.8 28 3.75 1.7 2.95
Typ
Max
4.6 0.88 0.70 1.32 2.72 9.7 10.4 6.6 5.4 29.8
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
3
IPS612-xxB
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4
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