IP Semiconductor Co., Ltd.
IPS625 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. High current density due to double mesa echnology; SIPOS and Glass passivation technology used has reliable operation up to 125℃ junction temperature. Low Igt parts available. Typical applications are in rectification (softstart) and these products are designed to be used with international recetifier input diodes, switches and output recetifiers which are available in identical package outlines.
IPS625-xxA
MAIN FEATURES
Symbol
IT(RMS) VDRM / VRRM VTM
Value
25 600 ≤ 1.6
Unit
A V V
TO-220A
ABSOLUTE MAXIMUM RATINGS
Parameter
RMS on–state current (Tc = 110℃, 180º conduction half sine wave) Average on–state current (Tc = 110℃, 180º conduction half sine wave) Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage Tj = 25℃ Tj = 25℃ Tj = 25℃ Tj = 25℃
Symbol
IT(RMS) IT(AV) Tstg Tj VDRM VRRM VDSM VRSM
Value
25 16 -40 to +150 -40 to +125 600 600 700 700 250
Unit
A A ℃ V V
One cycle Non Repetitive surge current, 10ms sine pulse, rated VRRM applied ITSM One cycle Non Repetitive surge current, 10ms sine pulse, no voltage applied I²t Value for fusing, 10ms sine pulse, rated VRRM applied I²t I²t Value for fusing, 10ms sine pulse, no voltage applied Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃) Peak gate current Average gate power dissipation dI/dt IGM PG(AV)
A 260 310 A²s 320 100 4 1 A/us A W
tp = 20us, Tj = 125℃
Tj = 125℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPS625-xxA
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
Symbol Test Condition
Required DC gate current to trigger at 25℃ at - 40℃ at 125℃ Required DC voltage to trigger at 25℃ (anode supply = 6V, resistive load) at - 40℃ at 125℃ DC gate voltage not to trigger
IPS625-xxA
40 40 100 15 1.5 2.5 1.0 0.2 80 60 500
Unit
IGT
MAX
mA
VGT
MAX
V
VGD IL IH dV/dt
(Tj = 125℃, VDRM = rated value)
IG = 1.2 IGT Holding current VD = 67% VDRM gate open Tj = 125 ℃
MAX MAX MAX MIN
V mA mA V/us
STATIC CHARACTERISTICS
Symbol
VTM
Test Conditions
ITM = 50A, tp = 380uS VD = VDRM Tj = 25℃ Tj = 25℃ Tj = 125℃
Value (MAX)
1.6 10 4
Unit
V uA mA
IDRM / IRRM VR = VRRM
THERMAL RESISTANCES
Symbol
Rth (j – c)
Parameter
Junction to case for DC TO-220A
Value
1.9
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPS625-xxA
PACKAGE MECHANICAL DATA
TO-220A
Millimeters Min
A B C C2 C3 D E F G H L1 L2 L3 V 1.14 2.65 40º 4.4 0.61 0.46 1.23 2.4 8.6 9.8 6.2 4.8 28 3.75 1.7 2.95
Typ
Max
4.6 0.88 0.70 1.32 2.72 9.7 10.4 6.6 5.4 29.8
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
3
IPS625-xxA
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4
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