IPS808-05D

IP Semiconductor Co., Ltd. High sensitive triggering levels, the IPS808 series SCRs is suitable for all applications, where the available gate current is limited, such as capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies… IPS808-xxD 1. Cathode 2. Anode RGK 3. Gate MAIN FEATURES Symbol IT(AV) VDRM / VRRM IGT DPAK(TO-252) Value 8 800 ≤ 100 Unit A V uA ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Tj = 25℃ Tj = 25℃ Tj = 105℃ Tj = 105℃ Symbol Tstg Tj VDRM VRRM IT(RMS) IT(AV) Value -40 to +150 -40 to +110 800 800 8 5 Unit ℃ V A A RMS on–state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on–state Current (Tj = 25℃) tp = 10ms tp = 8.3ms I²t Value for fusing ITSM 70 73 24.5 50 4 1 A tp = 10ms I²t dI/dt IGM PG(AV) A²s A/us A W Critical rate of rise of on state current (IG = 2 X IGT, tr≤100ns, f = 50Hz, Tj = 110℃ Peak gate current Average gate power dissipation tp = 20us, Tj = 125℃ Tj = 125℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPS808-xxD ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPS808-xxD Symbol Test Condition 05 Unit IGT VD = 6V RL = 140Ω VGT VD=VDRM, RL=3.3KΩ, RGK = 220Ω Tj = 125℃ IG = 1mA RGK = 1KΩ IT = 50mA RGK = 1KΩ IT = 16A tp = 380uS Tj = 25 ℃ VD = 65% VDRM RGK = 220Ω Tj = 125℃ VDRM IDRM VDRM RGK = VRRM RGK = = VRRM RGK = MIN MAX MAX 20 100 0.8 uA V VGD MIN 0.1 V IL IH VTM dV/dt MAX MAX MAX MIN MAX MAX 6 5 1.6 5 5 1 6 ~ 35 mA mA V V/us uA mA KΩ 220Ω Tj = 25℃ 220Ω Tj = 125℃ THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case(DC) TO-252 Value 20 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPS808-xxD PACKAGE MECHANICAL DATA TO-252(DPAK) 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 3 IPS808-xxD Dimensions Ref Min A A2 B B2 C C2 D E G H L1 L2 V1 V1 0º 1.37 4º 8º 0º 2.2 0.03 0.55 5.1 0.45 0.48 6 6.4 4.40 9.35 0.8 1.5 0.054 4º 8º Millimeters Typ Max 2.4 0.23 0.65 5.4 0.62 0.62 6.2 6.7 4.70 10.1 Inches Min 0.086 0.001 0.021 0.200 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.059 Typ Max 0.095 0.009 0.026 0.212 0.024 0.024 0.244 0.264 0.185 0.397 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4 IPS808-xxD 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 5