IPS812-05B

IP Semiconductor Co., Ltd. IPS812 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. High current density due to double mesa technology SIPOS and Glass passivation technology used has reliable operation up to 125℃ junction temperature. Low Igt parts available. IPS812 series are suitable for general purpose applications, a high gate sensitivity is required. IPS812-xxB MAIN FEATURES Symbol IT(RMS) IT(AV) VDRM / VRRM VTM Value 12 8 800 ≤ 1.6 Unit A A V V TO-220B ABSOLUTE MAXIMUM RATINGS Parameter RMS on–state current (Tc = 105℃, 180º conduction half sine wave) Average on–state current (Tc = 105℃, 180º conduction half sine wave) Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage Tj = 25℃ Tj = 25℃ Tj = 25℃ Tj = 25℃ Symbol IT(RMS) IT(AV) Tstg Tj VDRM VRRM VDSM VRSM ITSM I²t dI/dt IGM PG(AV) Value 12 8 -40 to +150 -40 to +110 800 800 900 900 140 98 50 4 1 Unit A A ℃ V V A A²s A/us A W One cycle Non Repetitive surge current ( Half Cycle, 50Hz) I²t Value for fusing (tp = 10ms, Half Cycle) Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃) Peak gate current Average gate power dissipation tp = 20us, Tj = 125℃ Tj = 125℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPS812-xxB ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPS812-xxB Symbol IGT VGT Test Condition 05 Required DC gate current to trigger Required DC voltage to trigger (anode supply = 6V, resistive load) DC gate voltage not to trigger MAX MAX 5 1.3 15 15 Unit mA V VGD IL IH dV/dt (Tj = 110℃, VDRM = rated value) IG = 1.2 IGT Holding current VD = 67% VDRM gate open Tj = 125 ℃ MAX MAX MAX MIN 30 15 40 0.2 60 30 200 V mA mA V/us STATIC CHARACTERISTICS Symbol VTM Test Conditions ITM = 24A, tp = 380uS VD = VDRM Tj = 25℃ Tj = 25℃ Tj = 125℃ Value (MAX) 1.6 5 2 Unit V uA mA IDRM / IRRM VR = VRRM THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case TO-220B Value 2.8 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPS812-xxB PACKAGE MECHANICAL DATA TO-220B Millimeters Min A B C C2 C3 D E F G H L1 L2 L3 V 1.14 2.65 40º 4.4 0.61 0.46 1.23 2.4 8.6 9.8 6.2 4.8 28 3.75 1.7 2.95 Typ Max 4.6 0.88 0.70 1.32 2.72 9.7 10.4 6.6 5.4 29.8 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 3 IPS812-xxB 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4