IPS825-40B

IP Semiconductor Co., Ltd. IPS825 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. High current density due to double mesa echnology; SIPOS and Glass passivation technology used has reliable operation up to 125℃ junction temperature. Low Igt parts available. Typical applications are in rectification (softstart) and these products are designed to be used with international recetifier input diodes, switches and output recetifiers which are available in identical package outlines. IPS825-xxB MAIN FEATURES Symbol IT(RMS) VDRM / VRRM VTM Value 25 800 ≤ 1.6 Unit A V V TO-220B ABSOLUTE MAXIMUM RATINGS Parameter RMS on–state current (Tc = 110℃, 180º conduction half sine wave) Average on–state current (Tc = 110℃, 180º conduction half sine wave) Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage Tj = 25℃ Tj = 25℃ Tj = 25℃ Tj = 25℃ Symbol IT(RMS) IT(AV) Tstg Tj VDRM VRRM VDSM VRSM Value 25 16 -40 to +150 -40 to +125 800 800 900 900 250 Unit A A ℃ V V One cycle Non Repetitive surge current, 10ms sine pulse, rated VRRM applied ITSM One cycle Non Repetitive surge current, 10ms sine pulse, no voltage applied I²t Value for fusing, 10ms sine pulse, rated VRRM applied I²t I²t Value for fusing, 10ms sine pulse, no voltage applied Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃) Peak gate current Average gate power dissipation dI/dt IGM PG(AV) A 260 310 A²s 320 100 4 1 A/us A W tp = 20us, Tj = 125℃ Tj = 125℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPS825-xxB ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPS825-xxB Symbol Test Condition 40 Required DC gate current to trigger at 25℃ at - 40℃ at 125℃ Required DC voltage to trigger at 25℃ (anode supply = 6V, resistive load) at - 40℃ at 125℃ DC gate voltage not to trigger 40 100 15 1.5 2.5 1.0 0.2 80 60 500 Unit IGT MAX mA VGT MAX V VGD IL IH dV/dt (Tj = 125℃, VDRM = rated value) IG = 1.2 IGT Holding current VD = 67% VDRM gate open Tj = 125 ℃ MAX MAX MAX MIN V mA mA V/us STATIC CHARACTERISTICS Symbol VTM Test Conditions ITM = 50A, tp = 380uS VD = VDRM Tj = 25℃ Tj = 25℃ Tj = 125℃ Value (MAX) 1.6 10 4 Unit V uA mA IDRM / IRRM VR = VRRM THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case for DC TO-220B Value 1.0 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPS825-xxB PACKAGE MECHANICAL DATA TO-220B Millimeters Min A B C C2 C3 D E F G H L1 L2 L3 V 1.14 2.65 40º 4.4 0.61 0.46 1.23 2.4 8.6 9.8 6.2 4.8 28 3.75 1.7 2.95 Typ Max 4.6 0.88 0.70 1.32 2.72 9.7 10.4 6.6 5.4 29.8 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 3 IPS825-xxB 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4