IP Semiconductor Co., Ltd.
IPT0106-xxU
IPT0106xx series are suitable for low power AC Switching application, phase Control application such as fan speed and temperature modulation control lighting control and static switching relay.
MAIN FEATURES
Symbol
IT(RMS) VDRM / VRRM VTM
Value
1 600 ≤1.6
Unit
A V V
TO-92
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (Full sine wave) Tj = 25℃ Tj = 25℃ Tc =105℃ f = 60Hz t = 16.7ms f = 50 Hz t = 20ms
Symbol
Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t
Value
-40 to +150 -40 to +125 600 600 700 700 1 10 9 0.41 1 1 0.1
Unit
℃ V V A A A²s A W W
Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing Peak gate current Peake gate power dissipation Average gate power dissipation
tp = 10ms tp = 20us, Tj = 125 ℃
Tj = 125 ℃ Tj = 125 ℃
IGM PGM PG(AV)
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPT0106-xxU
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
Rating
Symbol
Test Condition
Quadrant
MIN T2+G+/T2+G-/T2-GTYP MAX 4
Unit
IGT VD = 12V RL = 30Ω VGT VGD VD= 1/2VDRM, RL=3.3KΩ, Tj = 125 ℃ T2+G+/T2-G-/T2-G+ IL IG = 1.2 IGT T2+ GIH dV/dt IT = 100mA VD = 67% VDRM gate open Tj = 125 ℃ ALL 10 8 5 T2- G+ T2+G+/T2+G-/T2-G-/T2-G+ 0.2 5 9 1.5
mA
V V
mA
mA V/us
STATIC CHARACTERISTICS
Symbol
VTM IDRM IRRM
Test Conditions
ITM = 2A, t p = 380uS VD = VDRM VR = VRRM Tj = 25 ℃ Tj = 25 ℃ Tj = 125 ℃
Value (MAX)
1.6 5 500
Unit
V uA uA
THERMAL RESISTANCES
Symbol
Rth (j – c)
Parameter
Junction to case (AC)
Value
60
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPT0106-xxU
PACKAGE MECHANICAL DATA
TO-92
Dimensions Ref Millimeters Min
A B C D G H J K N P V 4.45 4.32 3.18 0.407 1.15 2.42 0.39 12.70 2.04 3.43
Inches Min
0.175 0.170 0.125 0.016 0.045 0.095 0.015 0.500 0.080 0.135
Max
5.2 5.33 4.19 0.533 1.39 2.66 0.50 2.66 2.54 -
Max
0.205 0.210 0.165 0.021 0.055 0.105 0.020 0.105 0.100 -
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
3
IPT0106-xxU
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4
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