IPT0406-25F

IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT0406-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. IPT0406-xx series is 3 Quadrants triacs, This is specially recommended for use on inductive Loads.. The TO-220F isolated mounting base, they provides 1500V RMS isolation voltage. IPT0406-xxF MAIN FEATURES Symbol IT(RMS) VDRM / VRRM IGT TO-220F Value 4 600 ≤ 50 Unit A V mA ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (Full sine wave) Tj = 25℃ Tj = 25℃ Tc =105℃ f = 60Hz t = 16.7ms f = 50 Hz t = 20ms Symbol Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t Value -40 to +150 -40 to +125 600 600 700 700 4 33 30 4.5 1 1.5 0.1 Unit ℃ V V A A A²s A W W Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing Peak gate current Peake gate power dissipation Average gate power dissipation tp = 10ms tp = 20us, Tj = 125 ℃ Tj = 125 ℃ Tj = 125 ℃ IGM PGM PG(AV) 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPT0406-xxF ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) Rating Symbol IGT Test Condition Quadrant MIN T2+G+/T2+G-/T2-GTYP 18 - 25 MAX 50 1.5 0.2 T2+ G+ 60 70 60 50 500 Unit mA V V VD = 12V RL = 30Ω VGT VGD VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ T2+G+/T2+G-/T2-G- IL IG = 1.2 IGT T2+ GT2- G- mA IH dV/dt IT = 100mA T2+G+/T2+G-/T2-G- mA V/us VD = 67% VDRM gate open Tj = 125 ℃ STATIC CHARACTERISTICS Symbol IDRM IRRM VD = VDRM VR = VRRM Test Conditions Tj = 25 ℃ Tj = 125 ℃ Value (MAX) 10 1 Unit uA mA THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case (AC) Value 3.5 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPT0406-xxF PACKAGE MECHANICAL DATA TO-220F Dimensions Ref Millimeters Min A B C C2 C3 D E F G H L1 L2 L3 V1 1.14 3.3 40º 4.4 0.74 0.5 2.4 2.6 8.8 9.7 6.4 5 28.0 3.63 1.7 0.044 0.130 40º 0.8 Inches Min 0.173 0.029 0.020 0.094 0.102 0.346 0.382 0.252 0.197 11.0 0.143 0.067 0.031 Typ Max 4.8 0.83 0.75 2.7 3 9.3 10.3 6.8 5.2 29.8 Typ Max 0.189 0.033 0.030 0.106 0.118 0.367 0.406 0.268 0.205 11.7 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-11 - 237 - 2837, Fax : +82-2-6280-6382, shorn@ipsemiconductor.com 3 IPT0406-xxF 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4