IPT0406-35D

IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT0406-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. IPT0406-xx series is 3 Quadrants triacs, This is specially recommended for use on inductive Loads.. IPT0406-xxD DPAK(TO-252) MAIN FEATURES Symbol IT(RMS) VDRM / VRRM IGT Value 4 600 5 to 35 Unit A V mA ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (Full sine wave) Tj = 25℃ Tj = 25℃ Tc =105℃ f = 60Hz t = 16.7ms f = 50 Hz t = 20ms Symbol Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t dI / dt IGM PG(AV) Value -40 to +150 -40 to +125 600 600 700 700 4 38 35 6 50 4 1 Unit ℃ V V A A A²s A/us A W Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing tp = 10ms Critical Rate of rise of on-state current IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ Peak gate current Average gate power dissipation tp = 20us, Tj = 125 ℃ Tj = 125 ℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPT0406-xxD ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) Symbol IGT VGT VGD VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ IG = 1.2 IGT II IH dV/dt IT = 500mA VD = 67% VDRM gate open Tj = 125 ℃ (dV/dt) c=0.1V/us Tj = 125 ℃ (dI/dt)c (dV/dt) c=10V/us Tj = 125 ℃ Without snubber Tj = 125 ℃ MIN MAX MIN Test Condition VD = 12V RL = 33Ω Quadrant I – II – III I – II – III I – II – III I – III MAX MAX MIN IPT0406-xxD 05 5 10 10 1.3 0.2 10 MAX 15 10 20 1.8 0.9 30 15 40 2.7 2.0 60 35 400 2.5 25 50 35 35 Unit mA V V IL mA mA V/us A/ms STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Test Conditions ITM = 5.5A, t p = 380uS VD = VDRM VR = VRRM Tj = 25 ℃ Tj = 25 ℃ Tj = 125 ℃ Value (MAX) 1.6 5 1 Unit V uA mA THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case (AC) Value 2.6 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPT0406-xxD PACKAGE MECHANICAL DATA TO-252(DPAK) 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 3 IPT0406-xxD Dimensions Ref Min A A2 B B2 C C2 D E G H L1 L2 V1 V1 0º 1.37 4º 8º 0º 2.2 0.03 0.55 5.1 0.45 0.48 6 6.4 4.40 9.35 0.8 1.5 0.054 4º 8º Millimeters Typ Max 2.4 0.23 0.65 5.4 0.62 0.62 6.2 6.7 4.70 10.1 Inches Min 0.086 0.001 0.021 0.200 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.059 Typ Max 0.095 0.009 0.026 0.212 0.024 0.024 0.244 0.264 0.185 0.397 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4 IPT0406-xxD IPT406-xxD 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 5