IP Semiconductor Co., Ltd.
High current density due to double mesa technology; SIPOS and Glass Passivation. IPT0408-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. IPT0408-xx series is 3 Quadrants triacs, This is specially recommended for use on inductive Loads.. The TO-220F isolated mounting base, they provides 1500V RMS isolation voltage.
IPT0408-xxF
MAIN FEATURES
Symbol
IT(RMS) VDRM / VRRM IGT
TO-220F
Value
4 800 ≤ 50
Unit
A V mA
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (Full sine wave) Tj = 25℃ Tj = 25℃ Tc =105℃ f = 60Hz t = 16.7ms f = 50 Hz t = 20ms
Symbol
Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t
Value
-40 to +150 -40 to +125 800 800 900 900 4 33 30 4.5 1 1.5 0.1
Unit
℃ V V A A A²s A W W
Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing Peak gate current Peake gate power dissipation Average gate power dissipation
tp = 10ms tp = 20us, Tj = 125 ℃
Tj = 125 ℃ Tj = 125 ℃
IGM PGM PG(AV)
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPT0408-xxF
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
Rating
Symbol
IGT
Test Condition
Quadrant
MIN T2+G+/T2+G-/T2-GTYP 18-25 MAX 50 1.5 0.2 T2+ G+ 60 70 60 50 500
Unit
mA V V
VD = 12V RL = 30Ω VGT VGD VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ T2+G+/T2+G-/T2-G-
IL
IG = 1.2 IGT
T2+ GT2- G-
mA
IH dV/dt
IT = 100mA
T2+G+/T2+G-/T2-G-
mA V/us
VD = 67% VDRM gate open Tj = 125 ℃
STATIC CHARACTERISTICS
Symbol
IDRM IRRM VD = VDRM VR = VRRM
Test Conditions
Tj = 25 ℃ Tj = 125 ℃
Value (MAX)
10 1
Unit
uA mA
THERMAL RESISTANCES
Symbol
Rth (j – c)
Parameter
Junction to case (AC)
Value
3.5
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPT0408-xxF
PACKAGE MECHANICAL DATA
TO-220F
Dimensions Ref Millimeters Min
A B C C2 C3 D E F G H L1 L2 L3 V1 1.14 3.3 40º 4.4 0.74 0.5 2.4 2.6 8.8 9.7 6.4 5 28.0 3.63 1.7 0.044 0.130 40º 0.8
Inches Min
0.173 0.029 0.020 0.094 0.102 0.346 0.382 0.252 0.197 11.0 0.143 0.067 0.031
Typ
Max
4.8 0.83 0.75 2.7 3 9.3 10.3 6.8 5.2 29.8
Typ
Max
0.189 0.033 0.030 0.106 0.118 0.367 0.406 0.268 0.205 11.7
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-11 - 237 - 2837, Fax : +82-2-6280-6382, shorn@ipsemiconductor.com
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IPT0408-xxF
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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