IPT04Q08-SEI

IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT04Q08-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. IPT04Q08-xxI IPAK(TO-251) MAIN FEATURES Symbol IT(RMS) VDRM / VRRM IGT Value 4 800 5 to 25 Unit A V mA ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (Full sine wave) Tj = 25℃ Tj = 25℃ Tc =105℃ f = 60Hz t = 16.7ms f = 50 Hz t = 20ms Symbol Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t dI / dt IGM PG(AV) Value -40 to +150 -40 to +125 800 800 900 900 4 38 35 6 50 4 1 Unit ℃ V V A A A²s A/us A W Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing tp = 10ms Critical Rate of rise of on-state current IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ Peak gate current Average gate power dissipation tp = 20us, Tj = 125 ℃ Tj = 125 ℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPT04Q08-xxI ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPT04Q06-xxI Symbol IGT VGT VGD Test Condition Quadrant TE I – II – III IV ALL MAX MAX MIN 10 MAX II 20 MAX MIN MIN 15 10 1 20 15 10 1 40 25 10 5 40 25 10 5 10 5 5 DE 5 10 1.5 0.2 20 20 SE 10 10 AE 10 25 Unit mA V V VD = 12V RL = 30Ω VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ IG = 1.2 IGT IT = 500mA ALL I – III – IV IL IH dV/dt (dV/dt)c mA mA V/us V/us VD = 67% VDRM gate open Tj = 125 ℃ (dV/dt) c=0.8A/ms Tj = 125 ℃ STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Test Conditions ITM = 5.5A, t p = 380uS VD = VDRM VR = VRRM Tj = 25 ℃ Tj = 25 ℃ Tj = 125 ℃ Value (MAX) 1.6 5 1 Unit V uA mA THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case (AC) Value 2.6 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPT04Q08-xxI PACKAGE MECHANICAL DATA TO-251(IPAK) Dimensions Ref Millimeters Min A A2 B B2 B3 B4 C C2 D E G H L L1 L2 V1 0.45 0.48 6 6.4 4.4 16 8.9 1.8 1.37 4º 2.2 0.9 0.55 5.1 0.76 0.32 0.62 0.62 6.2 6.7 4.7 16.7 9.4 1.9 1.5 0.017 0.019 0.236 0.252 0.173 0.630 0.35 0.071 0.054 4º Inches Min 0.086 0.035 0.021 0.200 0.030 0.013 0.024 0.024 0.244 0.264 0.185 0.658 0.37 0.075 0.059 Typ Max 2.4 1.1 0.65 5.4 0.85 Typ Max 0.095 0.043 0.026 0.212 0.033 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 3 IPT04Q08-xxI IPT4Q08-xxI 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4