IPT0808-BEF

IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT0808-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. IPT0808-xx series is 3 Quadrants triacs, This is specially recommended for use on inductive Loads. IPT0808-xxF MAIN FEATURES Symbol IT(RMS) VDRM / VRRM VTM TO-220F Value 8 800 ≤ 1.55 Unit A V V ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (Full sine wave) Tj = 25℃ Tj = 25℃ Tc =95℃ f = 60Hz t = 16.7ms f = 50 Hz t = 20ms Symbol Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t dI / dt IGM PG(AV) Value -40 to +150 -40 to +125 800 800 900 900 8 80 84 36 50 4 1 Unit ℃ V V A A A²s A/us A W Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing tp = 10ms Critical Rate of rise of on-state current IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ Peak gate current Average gate power dissipation tp = 20us, Tj = 125 ℃ Tj = 125 ℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPT0808-xxF ELECTRICAL CHARACTERISTICS(Tj = 25 ℃ unless otherwise specified) IPT0808-xxF Symbol IGT VGT VGD Test Condition VD = 12V RL = 33Ω VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ IG = 1.2 IGT Quadrant SE I – II – III I – II – III I – II – III I – III MAX MAX MIN 25 MAX II 30 MAX MIN 15 40 5.4 MIN 2.8 60 35 500 4.5 80 50 1000 7.0 10 CE 35 1.3 0.2 50 70 BE 50 Unit mA V V IL IH dV/dt mA mA V/us IT = 500mA VD = 67% VDRM gate open Tj = 125 ℃ (dV/dt) c=0.1V/us Tj = 125 ℃ (dI/dt)c (dV/dt) c=10V/us Tj = 125 ℃ Without snubber Tj = 125 ℃ A/ms STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Test Conditions ITM = 17A, t p = 380uS VD = VDRM VR = VRRM Tj = 125 ℃ Tj = 125 ℃ Tj = 125 ℃ Value(MAX) 1.55 5 1 Unit V uA mA THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case (AC) Value 1.6 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPT0808-xxF PACKAGE MECHANICAL DATA TO-220F Dimensions Ref Millimeters Min A B C C2 C3 D E F G H L1 L2 L3 V1 1.14 3.2 40º 4.30 0.74 0.5 2.4 2.5 8.6 9.7 6.2 5 28.0 3.63 1.7 0.044 0.126 40º 0.8 Inches Min 0.169 0.029 0.020 0.094 0.098 0.338 0.382 0.136 0.197 11.0 0.143 0.067 0.031 Typ Max 4.7 0.83 0.75 2.7 2.9 9.2 10.3 6.6 5.2 29.8 Typ Max 0.185 0.033 0.030 0.106 0.114 0.362 0.406 0.143 0.205 11.7 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 3 IPT0808-xxF IPT0808-xxF 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4