IPT08Q06-CEA

IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT08Q06-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. The IPT08Q06-xxA series are 2500V RMS insulating voltage. IPT08Q06-xxA (TO-220A) MAIN FEATURES Symbol IT(RMS) VDRM / VRRM VTM Value 8 600 ≤ 1.55 Unit A V V ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (Full sine wave) Tj = 25℃ Tj = 25℃ Tc =95℃ f = 60Hz t = 16.7ms f = 50 Hz t = 20ms Symbol Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t dI / dt IGM PG(AV) Value -40 to +150 -40 to +125 600 600 700 700 8 80 84 36 50 4 1 Unit ℃ V V A A A²s A/us A W Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing tp = 10ms Critical Rate of rise of on-state current IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ Peak gate current Average gate power dissipation tp = 20us, Tj = 125 ℃ Tj = 125 ℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPT08Q06-xxA ELECTRICAL CHARACTERISTICS(Tj = 25 ℃ unless otherwise specified) IPT08Q06-xxA Symbol Test Condition Quadrant CE BE 50 100 1.3 0.2 40 MAX II 80 MAX MIN 25 200 100 50 400 50 I – II – III IV ALL 25 50 Unit IGT VGT VGD VD = 12V RL = 30Ω MAX MAX MIN mA V V VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ ALL I – III – IV IL IH dV/dt IG = 1.2 IGT IT = 100mA VD = 67% VDRM gate open Tj = 125 ℃ mA mA V/us STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Test Conditions ITM = 17A, t p = 380uS VD = VDRM VR = VRRM Tj = 125 ℃ Tj = 125 ℃ Tj = 125 ℃ Value(MAX) 1.55 5 1 Unit V uA mA THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case (AC) Value 2.5 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPT08Q06-xxA PACKAGE MECHANICAL DATA TO-220A Millimeters Min A B C C2 C3 D E F G H L1 L2 L3 V 1.14 2.65 40º 4.4 0.61 0.46 1.23 2.4 8.6 9.8 6.2 4.8 28 3.75 1.7 2.95 Typ Max 4.6 0.88 0.70 1.32 2.72 9.7 10.4 6.6 5.4 29.8 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 3 IPT08Q06-xxA IPT08Q06-xxA 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4