IP Semiconductor Co., Ltd.
High current density due to double mesa technology; SIPOS and Glass Passivation. IPT08Q06-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers.
IPT08Q06-xxD
DPAK(TO-252)
MAIN FEATURES
Symbol
IT(RMS) VDRM / VRRM VTM
Value
8 600 ≤ 1.55
Unit
A V V
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (Full sine wave) Tj = 25℃ Tj = 25℃ Tc =95℃ f = 60Hz t = 16.7ms f = 50 Hz t = 20ms
Symbol
Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t dI / dt IGM PG(AV)
Value
-40 to +150 -40 to +125 600 600 700 700 8 80 84 36 50 4 1
Unit
℃ V V A A A²s A/us A W
Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing
tp = 10ms
Critical Rate of rise of on-state current IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ Peak gate current Average gate power dissipation
tp = 20us, Tj = 125 ℃
Tj = 125 ℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPT08Q06-xxD
ELECTRICAL CHARACTERISTICS(Tj = 25 ℃ unless otherwise specified)
IPT08Q06-xxD
Symbol
Test Condition
Quadrant
CE BE 50 100 1.3 0.2 40 MAX II 80 MAX MIN 25 200 100 50 400 50 I – II – III IV ALL 25 50
Unit
IGT VGT VGD
VD = 12V RL = 30Ω
MAX MAX MIN
mA V V
VD=VDRM, RL=3.3KΩ, Tj = 125 ℃
ALL I – III – IV
IL IH dV/dt
IG = 1.2 IGT IT = 100mA VD = 67% VDRM gate open Tj = 125 ℃
mA mA V/us
STATIC CHARACTERISTICS
Symbol
VTM IDRM IRRM
Test Conditions
ITM = 17A, t p = 380uS VD = VDRM VR = VRRM Tj = 125 ℃ Tj = 125 ℃ Tj = 125 ℃
Value(MAX)
1.55 5 1
Unit
V uA mA
THERMAL RESISTANCES
Symbol
Rth (j – c)
Parameter
Junction to case (AC)
Value
1.6
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPT08Q06-xxD
PACKAGE MECHANICAL DATA
TO-252(DPAK)
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPT08Q06-xxD
Dimensions Ref Min
A A2 B B2 C C2 D E G H L1 L2 V1 V1 0º 1.37 4º 8º 0º 2.2 0.03 0.55 5.1 0.45 0.48 6 6.4 4.40 9.35 0.8 1.5 0.054 4º 8º
Millimeters Typ Max
2.4 0.23 0.65 5.4 0.62 0.62 6.2 6.7 4.70 10.1
Inches Min
0.086 0.001 0.021 0.200 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.059
Typ
Max
0.095 0.009 0.026 0.212 0.024 0.024 0.244 0.264 0.185 0.397
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPT08Q06-xxD
IPT08Q06-xxD
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4