IPT1206-SEB

IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT1206-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. IPT1206-xx series is 3 Quadrants triacs, This is specially recommended for use on inductive Loads.. IPT1206-xxB MAIN FEATURES Symbol IT(RMS) VDRM / VRRM VTM Value 12 600 ≤ 1.55 Unit A V V TO-220B ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (Full sine wave) Tj = 25℃ Tj = 25℃ Tc =95℃ f = 60Hz t = 16.7ms f = 50 Hz t = 20ms Symbol Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t dI / dt IGM PG(AV) Value -40 to +150 -40 to +125 600 600 700 700 12 126 120 78 50 4 1 Unit ℃ V V A A A²s A/us A W Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing tp = 10ms Critical Rate of rise of on-state current IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ Peak gate current Average gate power dissipation tp = 20us, Tj = 125 ℃ Tj = 125 ℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPT1206-xxB ELECTRICAL CHARACTERISTICS(Tj = 25 ℃ unless otherwise specified) IPT1206-xxB Symbol IGT VGT VGD Test Condition VD = 12V RL = 30Ω VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ IG = 1.2 IGT Quadrant TE I – II – III I – II – III I – II – III I – III MAX MAX MIN 10 MAX II 15 MAX MIN 10 20 3.5 MIN 1.0 30 15 40 6.5 2.9 60 35 500 6.5 80 50 1000 12 25 5 SE 10 1.3 0.2 50 70 CE 35 BE 50 Unit mA V V IL IH dV/dt mA mA V/us IT = 100mA VD = 67% VDRM gate open Tj = 125 ℃ (dV/dt) c=0.1V/us Tj = 125 ℃ (dI/dt)c (dV/dt) c=10V/us Tj = 125 ℃ Without snubber Tj = 125 ℃ A/ms STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Test Conditions ITM = 5.5A, t p = 380uS VD = VDRM VR = VRRM Tj = 25 ℃ Tj = 25 ℃ Tj = 125 ℃ Value(MAX) 1.6 5 1 Unit V uA mA THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case (AC) Value 1.4 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPT1206-xxB PACKAGE MECHANICAL DATA TO-220B Millimeters Min A B C C2 C3 D E F G H L1 L2 L3 V 1.14 2.65 40º 4.4 0.61 0.46 1.23 2.4 8.6 9.8 6.2 4.8 28 3.75 1.7 2.95 Typ Max 4.6 0.88 0.70 1.32 2.72 9.7 10.4 6.6 5.4 29.8 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 3 IPT1206-xxB IPT1206-xxB 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4