IPT1206-TEF

IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT1206-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. The IPT1206-xxF(Insulated version) series are isolated internally, they provided a 2500V RMS isolation voltage from all three terminals to external heatsink.. IPT1206-xxF MAIN FEATURES Symbol IT(RMS) VDRM / VRRM VTM Value 12 600 ≤ 1.55 Unit A V V ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (Full sine wave) Tj = 25℃ Tj = 25℃ Tc = 79 ℃ f = 60Hz t = 16.7ms f = 50 Hz t = 20ms Symbol Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t dI / dt IGM PG(AV) Value -40 to +150 -40 to +125 600 600 700 700 12 126 120 78 50 4 1 Unit ℃ V V A A A²s A/us A W Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing tp = 10ms Critical Rate of rise of on-state current IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ Peak gate current Average gate power dissipation tp = 20us, Tj = 125 ℃ Tj = 125 ℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPT1206-xxF ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPT1206-xxF Symbol IGT VGT VGD Test Condition Quadrant TE SE 10 1.3 0.2 10 MAX II 15 MAX MIN 10 20 3.5 MIN 1.0 30 15 40 6.5 2.9 60 35 500 6.5 80 50 1000 12 25 50 70 CE 35 BE 50 I – II – III I – II – III I – II – III I – III MAX MAX MIN 5 Unit mA V V VD = 12V RL = 30Ω VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ IG = 1.2 IGT IT = 100mA IL IH dV/dt mA mA V/us VD = 67% VDRM gate open Tj = 125 ℃ (dV/dt) c=0.1V/us Tj = 125 ℃ (dI/dt)c (dV/dt) c=10V/us Tj = 125 ℃ Without snubber Tj = 125 ℃ A/ms STATIC CHARACTERISTICS Symbol VTM IDRM IRRM VD = VDRM VR = VRRM Test Conditions ITM = 17A, t p = 380uS Tj = 125 ℃ Tj = 125 ℃ Tj = 125 ℃ Value(MAX) 1.55 5 1 Unit V uA mA THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case(AC) Value 3.3 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPT1206-xxF PACKAGE MECHANICAL DATA TO-220F Dimensions Ref Millimeters Min A B C C2 C3 D E F G H L1 L2 L3 V1 1.14 3.3 40º 4.4 0.74 0.5 2.4 2.6 8.8 9.7 6.4 5 28.0 3.63 1.7 0.044 0.130 40º 0.8 Inches Min 0.173 0.029 0.020 0.094 0.102 0.346 0.382 0.252 0.197 11.0 0.143 0.067 0.031 Typ Max 4.8 0.83 0.75 2.7 3 9.3 10.3 6.8 5.2 29.8 Typ Max 0.189 0.033 0.030 0.106 0.118 0.367 0.406 0.268 0.205 11.7 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-11 - 237 - 2837, Fax : +82-2-6280-6382, shorn@ipsemiconductor.com 3 IPT1206-xxF 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4