IP Semiconductor Co., Ltd.
High current density due to double mesa technology; SIPOS and Glass Passivation. IPT1208-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. IPT1208-xx series is 3 Quadrants triacs, This is specially recommended for use on inductive Loads.. The IPT1206-xxA series are 2500V RMS insulating voltage.
IPT1208-xxA
(TO-220A)
MAIN FEATURES
Symbol
IT(RMS) VDRM / VRRM VTM
Value
12 800 ≤ 1.55
Unit
A V V
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (Full sine wave) Tj = 25℃ Tj = 25℃ Tc =95℃ f = 60Hz t = 16.7ms f = 50 Hz t = 20ms
Symbol
Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t dI / dt IGM PG(AV)
Value
-40 to +150 -40 to +125 800 800 900 900 12 126 120 78 50 4 1
Unit
℃ V V A A A²s A/us A W
Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing
tp = 10ms
Critical Rate of rise of on-state current IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ Peak gate current Average gate power dissipation
tp = 20us, Tj = 125 ℃
Tj = 125 ℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPT1208-xxA
ELECTRICAL CHARACTERISTICS(Tj = 25 ℃ unless otherwise specified)
IPT1208-xxA
TE IGT VGT VGD VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ IG = 1.2 IGT II IH dV/dt IT = 100mA VD = 67% VDRM gate open Tj = 125 ℃ (dV/dt) c=0.1V/us Tj = 125 ℃ (dI/dt)c (dV/dt) c=10V/us Tj = 125 ℃ Without snubber Tj = 125 ℃ MIN MAX MIN VD = 12V RL = 30Ω I – II – III I – II – III I – II – III I – III IL MAX 15 10 20 3.5 1.0 30 15 40 6.5 2.9 60 35 500 6.5 80 50 1000 12 A/ms mA V/us MAX MAX MIN 10 25 5 SE 10 1.3 0.2 50 70 mA CE 35 BE 50 mA V V
Symbol
Test Condition
Quadrant
Unit
STATIC CHARACTERISTICS
Symbol
VTM IDRM IRRM
Test Conditions
ITM = 17A, t p = 380uS VD = VDRM VR = VRRM Tj = 125 ℃ Tj = 125 ℃ Tj = 125 ℃
Value(MAX)
1.55 5 1
Unit
V uA mA
THERMAL RESISTANCES
Symbol
Rth (j – c)
Parameter
Junction to case (AC)
Value
2.3
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPT1208-xxA
PACKAGE MECHANICAL DATA
TO-220A
Millimeters Min
A B C C2 C3 D E F G H L1 L2 L3 V 1.14 2.65 40º 4.4 0.61 0.46 1.23 2.4 8.6 9.8 6.2 4.8 28 3.75 1.7 2.95
Typ
Max
4.6 0.88 0.70 1.32 2.72 9.7 10.4 6.6 5.4 29.8
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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IPT1208-xxA
IPT1208-xxA
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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