IPT1208-BEF

IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT1208-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. The IPT1208-xxF(Insulated version) series are isolated internally, they provided a 2500V RMS isolation voltage from all three terminals to external heatsink.. IPT1208-xxF TO-220F MAIN FEATURES Symbol IT(RMS) VDRM / VRRM VTM Value 12 800 ≤ 1.55 Unit A V V ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (Full sine wave) Tj = 25℃ Tj = 25℃ Tc = 79 ℃ f = 60Hz t = 16.7ms f = 50 Hz t = 20ms Symbol Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t dI / dt IGM PG(AV) Value -40 to +150 -40 to +125 800 800 900 900 12 126 120 78 50 4 1 Unit ℃ V V A A A²s A/us A W Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing tp = 10ms Critical Rate of rise of on-state current IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ Peak gate current Average gate power dissipation tp = 20us, Tj = 125 ℃ Tj = 125 ℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPT1208-xxF ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPT1208-xxF TE IGT VGT VGD VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ IG = 1.2 IGT II IH dV/dt IT = 100mA VD = 67% VDRM gate open Tj = 125 ℃ (dV/dt) c=0.1V/us Tj = 125 ℃ (dI/dt)c (dV/dt) c=10V/us Tj = 125 ℃ Without snubber Tj = 125 ℃ MIN MAX MIN VD = 12V RL = 30Ω I – II – III I – II – III I – II – III I – III IL MAX 15 10 20 3.5 1.0 30 15 40 6.5 2.9 60 35 500 6.5 80 50 1000 12 A/ms mA V/us MAX MAX MIN 10 25 5 SE 10 1.3 0.2 50 70 mA CE 35 BE 50 mA V V Symbol Test Condition Quadrant Unit STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Test Conditions ITM = 17A, t p = 380uS VD = VDRM VR = VRRM Tj = 125 ℃ Tj = 125 ℃ Tj = 125 ℃ Value(MAX) 1.55 5 1 Unit V uA mA THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case(AC) Value 3.3 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPT1208-xxF PACKAGE MECHANICAL DATA TO-220F Dimensions Ref Millimeters Min A B C C2 C3 D E G H L1 L2 V1 3.46 40º 4.3 0.74 0.5 2.4 2.5 8.6 9.7 5.0 28.0 3.63 3.63 0.136 40º 0.8 Inches Min 0.169 0.029 0.020 0.094 0.098 0.338 0.382 0.197 11.0 0.143 0.143 0.031 Typ Max 4.7 0.83 0.75 2.7 2.9 9.2 10.3 5.2 29.8 Typ Max 0.185 0.033 0.030 0.106 0.114 0.362 0.406 0.205 11.7 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 3 IPT1208-xxF 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4