IPT12Q06-BEF

IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT12Q06-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. The IPT12Q06-xxF(Insulated version) series are isolated internally, they provided a 2500V RMS isolation voltage from all three terminals to external heatsink.. IPT12Q06-xxF MAIN FEATURES Symbol IT(RMS) VDRM / VRRM VTM Value 12 600 ≤ 1.55 Unit A V V ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (Full sine wave) Tj = 25℃ Tj = 25℃ Tc = 79 ℃ f = 60Hz t = 16.7ms f = 50 Hz t = 20ms Symbol Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t dI / dt IGM PG(AV) Value -40 to +150 -40 to +125 600 600 700 700 12 126 120 78 50 4 1 Unit ℃ V V A A A²s A/us A W Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing tp = 10ms Critical Rate of rise of on-state current IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ Peak gate current Average gate power dissipation tp = 20us, Tj = 125 ℃ Tj = 125 ℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPT12Q06-xxF ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPT12Q06-xx F CE IGT VGT VGD VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ IG = 1.2 IGT II IH dV/dt IT = 100mA VD = 67% VDRM gate open Tj = 125 ℃ (dV/dt) c=0.1V/us Tj = 125 ℃ (dI/dt)c (dV/dt) c=10V/us Tj = 125 ℃ Without snubber Tj = 125 ℃ MIN MAX MIN I – II – III IV ALL ALL I – III – IV IL MAX 80 25 200 100 50 400 A/ms mA V/us MAX MAX MIN 40 25 50 1.3 0.2 50 mA BE 50 100 mA V V Symbol Test Condition Quadrant Unit VD = 12V RL = 30Ω STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Test Conditions ITM = 17A, t p = 380uS VD = VDRM VR = VRRM Tj = 125 ℃ Tj = 125 ℃ Tj = 125 ℃ Value(MAX) 1.55 5 1 Unit V uA mA THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case(AC) Value 3.3 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPT12Q06-xxF PACKAGE MECHANICAL DATA TO-220F Dimensions Ref Millimeters Min A B C C2 C3 D E F G H L1 L2 L3 V1 1.14 3.3 40º 4.4 0.74 0.5 2.4 2.6 8.8 9.7 6.4 5 28.0 3.63 1.7 0.044 0.130 40º 0.8 Inches Min 0.173 0.029 0.020 0.094 0.102 0.346 0.382 0.252 0.197 11.0 0.143 0.067 0.031 Typ Max 4.8 0.83 0.75 2.7 3 9.3 10.3 6.8 5.2 29.8 Typ Max 0.189 0.033 0.030 0.106 0.118 0.367 0.406 0.268 0.205 11.7 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-11 - 237 - 2837, Fax : +82-2-6280-6382, shorn@ipsemiconductor.com 3 IPT12Q06-xxF 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4