IPT16Q06-CEA

IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT16Q06-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. The IPT16Q06-xxA(Insulated version) series are isolated internally, they provided a 2500V RMS isolation voltage from all three termials to external heatsink. IPT16Q06-xxA MAIN FEATURES Symbol IT(RMS) VDRM / VRRM VTM Value 16 600 ≤ 1.55 Unit A V V TO-220A ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (Full sine wave) Tj = 25℃ Tj = 25℃ Tc = 85℃ f = 60Hz t = 16.7ms f = 50 Hz t = 20ms Symbol Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t dI / dt IGM PG(AV) Value -40 to +150 -40 to +125 600 600 700 700 16 168 160 144 50 4 1 Unit ℃ V V A A A²s A/us A W Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing tp = 10ms Critical Rate of rise of on-state current IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ Peak gate current Average gate power dissipation tp = 20us, Tj = 125 ℃ Tj = 125 ℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPT16Q06-xxA ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPT16Q06xxA Symbol Test Condition Quadrant CE BE 50 100 1.3 0.2 I – II – III IV ALL 25 50 Unit IGT VD = 12V RL = 30Ω VGT VGD VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ MAX MAX MIN mA V V ALL I – III – IV 40 MAX 80 MAX MIN 200 60 mA 120 400 mA V/us IL IG = 1.2 IGT II IH dV/dt IT = 100mA VD = 67% VDRM gate open Tj = 125 ℃ STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Test Conditions ITM = 22.5A, tp = 380uS VD = VDRM VR = VRRM Tj = 25 ℃ Tj = 25 ℃ Tj = 125 ℃ Value (MAX) 1.55 5 1 Unit V uA mA THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case (AC) Value 2.1 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPT16Q06-xxA PACKAGE MECHANICAL DATA TO-220A Millimeters Min A B C C2 C3 D E F G H L1 L2 L3 V 1.14 2.65 40º 4.4 0.61 0.46 1.23 2.4 8.6 9.8 6.2 4.8 28 3.75 1.7 2.95 Typ Max 4.6 0.88 0.70 1.32 2.72 9.7 10.4 6.6 5.4 29.8 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 3 IPT16Q06-xxA IPT16Q06-xxA 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4