IPT40Q06-SEH

IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT40Q06-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. The IPT25Q06-xxH (Insulated version) series are isolated internally they provides a 2500V RMS isolation voltage from all three terminals to external heatsink. IPT40Q06-xxH MAIN FEATURES Symbol IT(RMS) VDRM / VRRM VTM Value 40 600 ≤ 1.55 Unit A V V TO3P ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage RMS on–state current (360º conduction angle ) Tj = 25℃ Tj = 25℃ Tc = 100℃ Symbol Tstg Tj VDRM VRRM VDSM VRSM IT(RMS) ITSM I²t dI / dt IGM PG(AV) Value -40 to +150 -40 to +125 600 600 700 700 40 420 400 880 50 8 1 Unit ℃ V V A A A²s A/us A W Non repetitive surge peak on–state Current f = 60Hz, t = 16.7ms (full cycle, Tj = 25℃) f = 50Hz t = 20ms I²t Value for fusing tp = 10ms Critical Rate of rise of on-state current IG = 2 x IGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ Peak gate current Average gate power dissipation tp = 20us, Tj = 125 ℃ Tj = 125 ℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 1 IPT40Q06-xxH ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPT40Q06-xxH TE IGT VGT VGD VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ IG = 1.2 IGT, Tj = 125 ℃ IT = 500mA VD = 67% VDRM gate open Tj = 125 ℃ (dV/dt) c=0.1V/us Tj = 125 ℃ (dI/dt)c (dV/dt) c=10V/us Tj = 125 ℃ Without snubber Tj = 125 ℃ MIN I – II – III IV ALL ALL I – III - IV MAX II IH dV/dt MAX MIN 50 35 200 A/ms mA V/us MAX MAX MIN SE 1.3 0.2 40 mA CE 25 50 mA V V Symbol Test Condition Quadrant Unit VD = 12V RL = 30Ω IL STATIC CHARACTERISTICS Symbol VTM IDRM IRRM VD = VDRM VR = VRRM Test Conditions ITM = 60A, t p = 380uS Tj = 25 ℃ Tj = 25 ℃ Tj = 125 ℃ Value (MAX) 1.55 20 5 Unit V uA mA THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case (AC) Value 1.2 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 2 IPT40Q06-xxH PACKAGE MECHANICAL DATA TO-3P Millimeters Min A B C D E F G H J K L M N 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 5.45 3.15 4.07 1.35 14.6 Typ Max 4.6 1.55 15.6 0.7 2.9 16.5 21.1 15.5 5.65 3.65 4.17 1.40 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-11 - 237 - 2837, Fax : +82-2-6280-6382, shorn@ipsemiconductor.com 3 IPT40Q06-xxH IPT40Q06-xxH 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com 4