ITD08N65R

ITD08N65R N-Channel MOSFET Lead Free Package and Finish Applications: Adaptor Charger ● SMPS ● ● VDSS RDS(ON)(Typ.) ID 650V 0.86Ω 8A Features: RoHS Compliant Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves ● ● Ordering Information PART NUMBER ITD08N65R PACKAGE BRAND TO-252 IPS Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter ITD08N65R Units 650 V VDSS Drain-to-Source Voltage ID Continuous Drain Current 8 A Continuous Drain Current TC =100℃ 5 A Pulsed Drain Current (NOTE *1) 32 A Power Dissipation 120 W Derating Factor above 25℃ 0.96 W/℃ VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy(NOTE *2) 500 mJ dv/dt Peak Diode Recovery dv/dt(NOTE *3) 5 V/ns TL Maximum Temperature for Soldering 300 TJ and TSTG Operating Junction and Storage Temperature Range IDM PD 150，-55 to150 ℃ Thermal Resistance Symbol Parameter Typ. RθJC Junction-to-Case 1.04 RθJA Junction-to-Ambient 100 ©2016 InPower Semiconductor Co., Ltd. Page 1 of 9 Units Test Conditions ℃∕W Water cooled heatsink, PD adjusted for a peak junction temperature of +150℃. 1 cubic foot chamber, free air. ITD08N65R REV. A. Sep. 2016 ITD08N65R OFF Characteristics TC=25℃ unless otherwise specified Symbol BVDSS IDSS IGSS Parameter Min. Drain-to-Source Breakdown Voltage Typ. Max. 650 -- -- -- -- 1 Drain-to-Source Leakage Current -- 100 Gate-to-Source Forward Leakage -- -- +100 Gate-to-Source Reverse Leakage -- -- -100 Symbol Test Conditions V VGS=0V, ID=250μA μA -- ON Characteristics Units VDS=650V, VGS=0V TJ=25℃ VDS=520V, VGS=0V TJ=125℃ VGS=+30V nA VGS= -30V TJ=25℃ unless otherwise specified Parameter Min. Typ. Max. Units RDS(ON) StaticDrain-to-Source On-Resistance -- 0.86 1.0 Ω VGS(TH) Gate Threshold Voltage 2 -- 4 V gfs Forward Transconductance -- 7.5 -- S Test Conditions VGS=10V, ID=4A VDS=VGS,ID=250μA VDS=15V, ID=4A Pulse width ≤300μs; duty cycle≤ 2% Dynamic Characteristics Symbol Essentially independent of operating temperature Parameter Min. Typ. Max. Ciss Input Capacitance -- 1540 -- Coss Output Capacitance -- 123 -- Crss Reverse Transfer Capacitance -- 6.6 -- Qg Total Gate Charge -- 29 -- Qgs Gate-to-Source Charge -- 6 -- Qgd Gate-to-Drain (“Miller”) Charge -- 11.3 -- Resistive Switching Characteristics Symbol Test Conditions pF VGS= 0V,VDS = 25V f =1.0MHz nC ID=8A,VDD=520V VGS = 10V Essentially independent of operating temperature Parameter Min. Typ. Max. td(ON) Turn-on Delay Time -- 24 -- trise Rise Time -- 18 -- td(OFF) Turn-Off Delay Time -- 50 -- tfall Fall Time -- 18 -- ©2016 InPower Semiconductor Co., Ltd. Units Page 2 of 9 Units Test Conditions ns VDD=325V, ID=8A, VG=10V RG=10Ω ITD08N65R REV. A. Sep. 2016 ITD08N65R Source-Drain Diode Characteristics Symbol Parameter Tc=25℃ unless otherwise specified Min. Typ. Max. Units -- 8 A Test Conditions IS Continuous Source Current (Body Diode) -- ISM Maximum Pulsed Current (Body Diode) -- -- 32 A VSD Diode Forward Voltage -- -- 1.5 V ISD=8A, VGS=0V trr Reverse Recovery Time -- 427 -- ns Qrr Reverse Recovery Charge -- 2560 -- nC IF= IS di/dt=100A/us TC=25℃ Pulse width ≤300μs; duty cycle ≤ 2% Notes: *1. Repetitive rating; pulse width limited by maximum junction temperature. *2. L=10mH, I D =10A, Start TJ =25℃ *3. I SD =8A,di/dt ≤100A/us,V DD ≤BV D S, Start TJ =25℃ ©2016 InPower Semiconductor Co., Ltd. Page 3 of 9 ITD08N65R REV. A. Sep. 2016 ITD08N65R Characteristics Curve： Figure 1.Maximum Effective Thermal Impedance，Junction-to-Case Figure2.Max. Power Dissipation vs Case Temperature Figure3.Max. Drain Current vs Case Temperature 12 Id , Drain Current , Amps PD , Power Dissipation ，Watts 160 120 80 40 0 8 4 0 0 25 50 75 100 TC , Case Temperature , C 125 150 Figure 4.Typical Output Characteristics ©2016 InPower Semiconductor Co., Ltd. 0 25 75 100 125 50 TC , Case Tem perature , C 150 Figure 5. Typical Transfer Characteristics Page 4 of 9 ITD08N65R REV. A. Sep. 2016 ITD08N65R Figure 6. Typical Body Diode Transfer Characteristics Figure 8. Capacitance VS Drain-to-Source Voltage ©2016 InPower Semiconductor Co., Ltd. Figure 7. Typical on Resistance VS Drain Current Figure 9. Gate Charge VS Gate-to-Source Voltage Page 5 of 9 ITD08N65R REV. A. Sep. 2016 ITD08N65R Figure 10. Breakdown Voltage VS Temperature Figure 11. on-Resistance VS Temperature Figure 12 Theshold Voltage vs Junction Temperature ©2016 InPower Semiconductor Co., Ltd. Page 6 of 9 Figure 13. Safe Operating Area ITD08N65R REV. A. Sep. 2016 ITD08N65R Test Circuits and Waveforms Figure 14. Gate Charge Test Circuit Figure 15. Gate Charge Waveforms Figure 16. Resistive Switching Test Circuit ©2016 InPower Semiconductor Co., Ltd. Figure 17. Resistive Switching Waveforms Page 7 of 9 ITD08N65R REV. A. Sep. 2016 ITD08N65R Figure 18. Diode Reverse Recovery Test Circuit Figure 19. Diode Reverse Recovery Waveform di/dt=100A/μs Figure20.Unclamped Inductive Switching Test Circuit ©2016 InPower Semiconductor Co., Ltd. Figure21.Unclamped Inductive Switching Waveform Page 8 of 9 ITD08N65R REV. A. Sep. 2016 ITD08N65R Disclaimers: InPower Semiconductor Co., Ltd (IPS) reserves the right to make changes without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to IPS’s terms and conditions supplied at the time of order acknowledgement. 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Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ©2016 InPower Semiconductor Co., Ltd. Page 9 of 9 ITD08N65R REV. A. Sep. 2016