SKTT077N07N

SKTT077N07N Trench N-MOSFET 70V, 6.1mΩ, 80A 华润微电子(重庆)有限公司 Features Product Summary • Uses CRM(CQ) advanced Trench technology VDS 70V • Extremely low on-resistance RDS(on) RDS(on) typ. 6.1mΩ • Excellent QgxRDS(on) product(FOM) ID 80A • Qualified according to JEDEC criteria 100% DVDS Tested Applications • Motor control and drive 100% Avalanche Tested • Battery management • UPS (Uninterrupible Power Supplies) Package Marking and Ordering Information Part # Marking Package SKTT077N07N SKTT077N07N TO-220 Packing Tube Reel Size Tape Width Qty N/A N/A 50pcs Symbol Value Unit VDS 70 V Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) ID TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) 86 80 A 55 ID pulse 320 A Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) EAS 144 mJ Gate-Source voltage VGS ±25 V Power dissipation (TC = 25°C) Ptot 135 W Tj , T stg -55...+150 °C Operating junction and storage temperature ©China Resources Microelectronics (Chongqing) Limited Page 1 SKTT077N07N Trench N-MOSFET 70V, 6.1mΩ, 80A 华润微电子(重庆)有限公司 Thermal Resistance Symbol Max Thermal resistance, junction – case. RthJC 0.92 Thermal resistance, junction – ambient(min. footprint) RthJA 66 Parameter Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 70 - - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 2.4 3 3.6 V VDS=VGS,ID=250uA VDS=65V,VGS=0V Zero gate voltage drain current IDSS Gate-source leakage current IGSS - 0.1 1 - - 20 - 10 100 µA Tj=25°C Tj=150°C nA VGS=25V,VDS=0V VGS=10V, ID=40A, Drain-source on-state resistance RDS(on) - 6.1 7.7 - 12.5 15.8 gfs - 92 - Input Capacitance Ciss - 4496 - Output Capacitance Coss - 360 - Reverse Transfer Capacitance Crss - 262 - Gate Total Charge QG - 101 - Gate-Source charge Qgs - 24 - Gate-Drain charge Qgd - 34 - Turn-on delay time td(on) - 23 - tr - 106 - td(off) - 53 - tf - 110 - RG - 0.8 - Transconductance mΩ Tj=25°C Tj=150°C S VDS=5V,ID=40A pF VGS=0V, VDS=35V, f=1MHz nC VGS=10V, VDS=32V, ID=40A, f=1MHz ns VGS=10V, VDD=30V, RG_ext=2.7Ω Ω VGS=0V, VDS=0V, f=1MHz Dynamic Characteristic Rise time Turn-off delay time Fall time Gate resistance ©China Resources Microelectronics (Chongqing) Limited Page 2 SKTT077N07N Trench N-MOSFET 70V, 6.1mΩ, 80A 华润微电子(重庆)有限公司 Body Diode Characteristic Parameter Symbol Value min. typ. max. Unit Test Condition VGS=0V,ISD=40A Body Diode Forward Voltage VSD - 0.9 1.3 V Body Diode Reverse Recovery Time trr - 39 - ns Body Diode Reverse Recovery Charge Qrr - 60 - nC ©China Resources Microelectronics (Chongqing) Limited IF=40A, dI/dt=100A/µ s Page 3 SKTT077N07N Trench N-MOSFET 70V, 6.1mΩ, 80A 华润微电子(重庆)有限公司 Typical Performance Characteristics Fig 2: Transfer Characteristics Fig 1: Output Characteristics 200 200 10V VDS=5V 6.0V 160 160 120 ID (A) ID (A) 5.5V 80 120 80 5.0V 40 150°C 40 25°C VGS=4.5V 0 0 0 1 2 3 4 5 2 3 4 VDS (V) Fig 3: Rds(on) vs Drain Current and Gate Voltage 6 7 Fig 4: Rds(on) vs Gate Voltage 20 10 VGS=10V 18 ID=40A 16 RDS(on) (mΩ) 9 RDS(on) (mΩ) 5 VGS (V) 8 14 12 10 8 7 25°C 6 4 6 2 0 5 0 40 80 120 160 4 200 5 6 8 9 10 Fig 6: Capacitance Characteristics Fig 5: Rds(on) vs. Temperature 100000 2.5 C - Capacitance (PF) VGS=10V ID=40A 2.0 RDS(on)_Normalized 7 VGS (V) ID (A) 1.5 1.0 Ciss 10000 Coss VGS=0V f=1MHz 1000 Crss 0.5 100 0.0 -50 -25 0 25 50 75 100 125 150 0 13 26 Tj - Junction Temperature (°C) ©China Resources Microelectronics (Chongqing) Limited 39 52 65 VDS (V) Page 4 SKTT077N07N Trench N-MOSFET 70V, 6.1mΩ, 80A 华润微电子(重庆)有限公司 Fig 8: Body-diode Forward Characteristics Fig 7: Gate Charge Characteristics 1000 IS - Diode Current(A) 10 VGS (V) 8 VDS=48V ID=60A 6 4 100 25˚C 150˚C 10 2 1 0 0 20 40 60 80 0 100 0.2 Qg (nC) 0.6 0.8 1 1.2 1.4 1.6 150 175 Fig 10: Drain Current Derating Fig 9: Power Dissipation 160 90 140 80 70 120 60 ID (A) 100 Ptot (W) 0.4 VSD - Diode Forward Voltage(V) 80 50 40 60 30 40 VGS≥10V 20 20 10 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Fig 11: Safe Operating Area 1000 100 ID (A) 1us Limited by Rds(on) 10us 100us 10 1ms 10ms DC 1 Single pulse Tc=25˚C 0.1 0.1 1 VDS (V) 10 100 ©China Resources Microelectronics (Chongqing) Limited Page 5 SKTT077N07N Trench N-MOSFET 70V, 6.1mΩ, 80A 华润微电子(重庆)有限公司 Fig 12: Max. Transient Thermal Impedance 1 D=0.5 ZthJC (˚C/W) 0.2 0.1 0.1 0.05 0.02 0.01 Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) Single pulse 0.01 1E-05 0.0001 0.001 0.01 0.1 1 tp (sec) ©China Resources Microelectronics (Chongqing) Limited Page 6 SKTT077N07N 华润微电子(重庆)有限公司 Trench N-MOSFET 70V, 6.1mΩ, 80A Test Circuit & Waveform ©China Resources Microelectronics (Chongqing) Limited Page 7 SKTT077N07N Trench N-MOSFET 70V, 6.1mΩ, 80A 华润微电子(重庆)有限公司 Package Outline: TO-220-3L Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 A1 2.25 2.55 0.089 0.1 b 0.71 0.91 0.028 0.036 b1 1.17 1.37 0.046 0.054 c 0.33 0.65 0.013 0.026 c1 1.2 1.4 0.047 0.055 D 9.91 10.25 0.39 0.404 E 8.95 9.75 0.352 0.384 E1 12.65 12.95 0.498 0.51 e 2.540 Typ. 0.100 Typ. e1 4.98 5.18 0.196 0.204 F 2.65 2.95 0.104 0.116 H 7.9 8.1 0.311 0.319 h 0 0.3 0 0.012 L 12.9 13.4 0.508 0.528 L1 2.85 3.25 0.112 0.128 V Φ 7.500 Ref. 3.4 0.295 Ref. 3.8 0.134 ©China Resources Microelectronics (Chongqing) Limited 0.15 Page 8 SKTT077N07N Trench N-MOSFET 70V, 6.1mΩ, 80A 华润微电子(重庆)有限公司 Revision History Revison Date 1.0 2018/9/25 Major changes Release of formal version Disclaimer Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive, aviation/aerospace and life-support devices or systems. Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury, death or property damage. Customer are solely responsible for providing adequate safe measures when design their systems. CRM(CQ) reserves the right to improve product design, function and reliability without notice. ©China Resources Microelectronics (Chongqing) Limited Page 9