2N2222AUATX

Surface Mount NPN General Purpose Transistor 2N2222AUA (TX, TXV) Features: • Ceramic 4 pin surface mount package • Small package to minimize circuit board area • Hermetically sealed • Processed per MIL-PRF-19500/255 Description: The 2N2222AUA (TX, TXV) is a hermetically sealed ceramic surface mount general purpose switching transistor. The four pin ceramic package is ideal for designs where board space and device weight are important design considerations. The “UA” suffix denotes the 4 terminal leadless chip carrier package, type “A” per MIL-PRF-19500/255. Typical screening per MIL-PRF-19500/255. The burn-in condition is VCB = 30 V. PD = 400 mW, TA = 25°C, t = 80 hrs. Refer to MIL-PRF-19500/255 for complete requirements. In addition, the TX and TXV versions receive 100% thermal response testing. When ordering parts without processing, do not use the TX or TXV suffix. Applications: • • • • • General switching Amplification Signal processing Radio transmission Logic gates General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Rev - 06/2019 Page 1 Surface Mount NPN General Purpose Transistor 2N2222AUA (TX, TXV) Electrical Specifications Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Collector-Base Voltage 75V Collector-Emitter Voltage 50V Emitter-Base Voltage 6.0V Collector Current-Continuous 800mA Operating Junction Temperature (TJ) -65° C to +200 °C Storage Junction Temperature (Tstg) -65° C to +200° C Power Dissipation @ TA = 25°C 0.5 W Power Dissipation @ Tc = 25° C 1.16 W(1) Soldering Temperature (vapor phase reflow for 30 seconds) 215° C Soldering Temperature (heated collet for 5 seconds) 260° C Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS OFF CHARACTERISTICS V(BR)CBO Collector-Base Breakdown Voltage 75 V IC = 10 µA, IE = 0 V(BR)CEO Collector-Emitter Breakdown Voltage 50 V IC = 10 mA, IB = 0 V(BR)EBO Emitter-Base Breakdown Voltage 6.0 V IE = 10 µA, IC = 0 10 nA VCB = 60 V, IE = 0 10 µA VCB = 60 V, IE = 0, TA = 150° C ICBO Collector-Base Cutoff Current IEBO Emitter-Base Cutoff Current 10 nA VEB = 4 V, IC = 0 ICES Collector Emitter Cutoff Current 50 nA VCE = 50 V ON CHARACTERISTICS 50 - VCE = 10 V, IC = 0.1 mA - VCE = 10 V, IC = 1.0 mA - VCE = 10 V, IC = 10 mA - VCE = 10 V, IC = 150 mA(2) 30 - VCE = 10 V, IC = 500 mA(2) 35 - VCE = 10 V, IC = 10 mA, TA = -55°C 75 hFE Forward-Current Transfer Ratio 325 100 100 300 Note: 1. Derate linearly 6.6 mW/°C above 25° C 2. Pulse Width ≤300 µs, Duty Cycle ≤ 2.0% General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Rev - 06/2019 Page 2 Surface Mount NPN General Purpose Transistor 2N2222AUA (TX, TXV) Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS 0.3 V IC = 150 mA, IB= 15 mA(2) 1.0 V IC = 500 mA, IB= 50 mA(2) 1.2 V IC = 150 mA, IB= 15 mA(2) 2.0 V IC = 500 mA, IB= 50 mA(2) ON CHARACTERISTICS VCE (SAT) Collector-Emitter Saturation Voltage VBE(SAT) Base-Emitter Saturation Voltage 0.6 SMALL-SIGNAL CHARACTERISTICS |hfe Small Signal Forward Current Transfer Ratio 50 - VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz |hfe Small Signal Forward Current Transfer Ratio 2.5 - VCE = 20 V, IC = 20 mA, f = 100 MHz Cobo Open Circuit Output Capacitance 8.0 pF VCB = 10 V, 100 kHz ≤ f ≤ 1.0 MHZ Cibo Input Capacitance (Output Open) 25 pF VEB = 0.5 V, 100 kHz ≤ f ≤ 1.0 MHZ SWITCHING CHARACTERISTICS ton Turn-On Time 35 ns VCC = 30 V, IC = 150 mA, IB1 = 15 mA toff Turn-Off Time 300 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Rev - 06/2019 Page 3