OP515A

NPN Silicon Phototransistors OP515A, OP515B, OP515C, OP515D Features: • Variety of sensitivity ranges • Coaxial leaded package style • Small package size for space limited applications Description: The OP515 series devices consist of NPN silicon phototransistors in a small hermetic package with an extended Collector lead. The narrow receiving angle provides excellent on-axis coupling. This device is 100% production tested using infrared light for close correlation with Optek’s GaAs and GaAIAs emitters. Absolute Maximum Ratings (TA=25°C unless otherwise noted) Continuous Collector Current 50 mA Collector-Emitter Voltage 30 V Emitter-Collector Voltage (OP505 and OP506 series only) 5.0 V Storage & Operating Temperature Range Lead Soldering Temperature (1/16 inch (1.6 mm) from case for 5 sec. with soldering iron) Power Dissipation -55°C to +125°C 260°C(1) 100 mW (2) Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow soldering. Maximum 20 grams force may be applied to the leads when soldering. (2) Derate linearly 0.71 mW/° C above 25° C. Dimensions are in inches (mm) OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com Issue A 02/05 Page 1 NPN Silicon Phototransistors OP515A, OP515B, OP515C, OP515D Symbol IC(ON) Parameter On-State Collector Current Min OP515D OP515C OP515B OP515A Typ Max 0.40 1.00 3.00 6.00 Collector-Dark Current ICEO Units 100 Test Conditions mA VCE = 5 V, Ee = 5.0 mW/cm2(3) nA VCE = 10 V, Ee = 0(4) V(BR)CEO Collector-Emitter Breakdown Voltage 30 V IC = 100 µA V(BR)ECO Emitter-Collector Breakdown Voltage 5 V IE = 100 µA VCE(SAT) Collector-Emitter Saturation Voltage V IC = 400 µA, Ee = 5.0 mW/cm2(3) ∆IC/∆T Relative IC Changes with Temperature OP505A-D and OP506A-D series IECO OP515 0.40 1.00 %/°C Emitter-Reverse Current 100 µA VCE = 5 V, Ee = 1.0 mW/cm2 VEC = 0.4 V Notes: (1) Ee(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.250” (6.35mm) in diameter and perpendicular to and centered to the mechanical axis of the emitting surface at a distance of 0.466” (11.84mm). Ee(APT) is not necessarily uniform within the measured area. (2) Derating Linearly 0.71 mW/°C above 25°C (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (4) To calculate typical collector dark current in nA, use the formula ICED = 10(0.040TA-3.4) where TA is ambient temperature in °C. On-State Collector Current Vs Irradiance Collector Current Vs Collector to Emitter Voltage vs Irradiance 3.5 3.5 3.0 3.0 6 mW/cm2 y = 0.6364x - 0.1221 2 R = 0.9992 5 mW/cm2 4 mW/cm2 2.5 2.5 IC Collector Current (mA) IC (ON) -State Collector Current -mA TA = 25°C λ = 940 nm TA = 25°C VCE = 5 Volts λ = 940 nm 2.0 1.5 1.0 0.5 3 mW/cm2 2 mW/cm2 1 mW/cm2 2.0 1.5 1.0 0.5 0.0 0.0 0.0 1.0 2.0 3.0 Ee -Irradiance -mW/cm 4.0 5.0 2 OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VCE - Collector to Emitter Voltage (V) Issue A 02/05 Page 2