OP522

Silicon Phototransistor in Miniature SMT Package OP522 • • • High Photo Sensitivity Fast Response Time 1206 Package Size with Internal Lens The OP522 is an NPN silicon phototransistor mounted in a miniature SMT package. The device incorporates an integral molded lens which enables a narrow acceptance angle and higher collector currents than devices without lenses. This device is packaged in a 1206 size chip carrier that is compatible with most automated mounting equipment. The OP522 is mechanically and spectrally matched to the OP250 series infrared LEDs. Applications • • • • Non-Contact Position Sensing Datum detection Machine automation Optical encoders Relative Response vs. Wavelength 100% OP522 Relative Response 80% 60% 40% 20% 0% 400 500 600 700 800 900 1000 1100 Wavelength (nm) RoHS OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com Issue A 12/2010 Page 1 of 4 SMT Silicon Phototransistor OP522 Absolute Maximum Ratings TA = 25o C unless otherwise noted Storage Temperature Range -40° C to +85° C Operating Temperature Range -25° C to +85° C 260° C(1) Lead Soldering Temperature Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5V Collector Current 20 mA 75 mW(2) Power Dissipation Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. De-rate linearly at 2.17 mW/° C above 25° C. Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER IC(ON) On-State Collector Current VCE(SAT) ICEO TYP MAX UNITS 0.5 CONDITIONS mA VCE = 5.0V, Ee = 5.0mW/cm2 (3) Collector-Emitter Saturation Voltage 0.4 V IC = 100µA, Ee = 2.0mW/cm2 (3) Collector-Emitter Dark Current 100 nA VCE = 5.0V, Ee = 0 (4) V(BR)CEO Collector-Emitter Breakdown Voltage 30 V IC = 100µA V(BR)ECO Emitter-Collector Breakdown Voltage 5 V IE = 100µA µs IC = 1mA, RL = 1KΩ tr, tf Rise and Fall Times 15 Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (0.04 T -3/4) where TA is the ambient temperature in ° C. To Calculate typical collector dark current in µA, use the formula ICEO = 10 A 4. 160% Relative Collector Current 140% Relative On-State Collector Current vs. Irradiance Relative On-State Collector Current vs. Temperature 140% Normalized at Ee = 5mW/cm2 Conditions: VCE = 5V, λ = 935nm, TA = 25 °C 130% Relative Collector Current 3. MIN 120% 100% 80% 60% 40% 20% 0 Normalized at TA = 25°C . Conditions: VCE = 5V, λ = 935nm, TA = 25 °C 120% 110% 100% 90% 80% 70% 1.0 2.0 3.0 4.0 5.0 6.0 2 Ee—Irradiance (mW/cm ) 7.0 8.0 -25 0 25 50 75 100 Temperature—(°C) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A 12/2010 Page 2 of 4 OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com SMT Silicon Phototransistor OP522 Relative Response vs. Angular Position Relative On-State Collector Current vs. Collector-Emitter Voltage 100% IC(ON) - On-State Collector Current (mA) 2.00 Relative Response 80% 60% 40% 20% 1.80 6 mW/cm2 1.60 5 mW/cm2 1.40 4 mW/cm2 1.20 1.00 3 mW/cm2 0.80 2 mW/cm2 0.60 0.40 1 mW/cm2 0.20 0% -90 -60 -30 0 30 60 90 0 Angular Position (Degrees) 0.1 0.2 0.3 0.4 0.5 Collector-Emitter Voltage (V) Collector-Emitter Dark Current vs. Temperature Collector-Emitter Dark Current (nA) 1000 Conditions: Ee = 0 mW/cm2 VCE = 10V 100 10 1 0 -25 0 25 50 75 100 Temperature—(°C) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com Issue A 12/2010 Page 3 of 4 SMT Silicon Phototransistor OP522 2 1 RECOMMENDED SOLDER PADS [4.60±0.10] .181±.0039 [1.50±0.10] .059±.0039 [1.60±0.10] .063±.0039 PIN [1.60±0.10] .063±.0039 FUNCTION 1 Collector 2 Emitter OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A 12/2010 Page 4 of 4 OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com