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OPB703WZ

OPB703WZ

  • 厂商:

    IRCTT(TT电子)

  • 封装:

    Modular

  • 描述:

  • 详情介绍
  • 数据手册
  • 价格&库存
OPB703WZ 数据手册
     WZ Version The OPB703, OPB704 and OPB705 consist of an Infrared (890nm) Light Emitting Diode (LED) and a NPN silicon Phototransistor, mounted side-by-side on converging optical axes in a black plastic housing and are designed for PCBoard mounting. The OPB703WZ, OPB704WZ, OPB705WZ and OPB70BWZ are designed for remote mounting utilizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned. The OPB70AWZ consists of an Infrared (890nm) Light Emitting Diode (LED) and a NPN silicon Photodarlington, mounted side-byside on converging optical axes in a black plastic housing and is designed for remote mounting utilizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned. The OPB70CWZ through OPB70FWZ consist of a Visible (Red 640nm) Light Emitting Diode (LED) and a NPN silicon Phototransistor or Rbe Phototransistor, mounted side-by-side on converging optical axes in a black plastic housing and are designed for remote mounting utilizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned. Various lens options are available: No lens for the (OPB703, OPB703WZ), blue window for dust protection for the (OPB704, OPB704WZ, OPB70BWZ, OPB70HWZ) and aperture lens for improved resolution for the (OPB705, OPB705WZ, OPB70AWZ, OPB70CWZ, OPB70DWZ). The OPB704G and OPB704GWZ offers excellent protection for dirty environments. The phototransistor responds to illumination from the emitter when a reflective object passes within the field of view centered typically at 0.15” (3.8 mm). Custom electrical, wire, cabling and connectors are available. Contact your local representative or OPTEK for more information. Ordering Information Part LED Peak Detector OPB703 Optical Cover None OPB703WZ Lead or Wire 0.160" Leads 24" / 26 AWG Wire OPB704 0.160" Leads  OPB704WZ 24" / 26 AWG Wire        OPB70HWZ OPB704G Blue Window 890 nm 24" / 26 AWG Wire OPB705 0.160" Leads Aperture OPB705WZ OPB70AWZ Darlington OPB70BWZ Rbe Transistor OPB70CWZ Rbe Transistor OPB70EWZ OPB70FWZ 24” / 26 AWG Wire 0.160" Leads OPB704GWZ OPB70DWZ RoHS Transistor 640 nm Transistor Rbe Transistor Transistor Blue Window Aperture Clear Window 24" / 26 AWG Wire OPB703, OPB704, OPB705 OP- B703, OP- 1 4 2 3 OPB703WZ, OPB704WZ, OPB705WZ, OPB70AWZ, OPB70BWZ, OPB70CWZ, OPB70DWZ Anode Collector Cathode Emitter Anode Cath- Collector Emitter An- Cathode Collector Emitter OPB704G OPB704GWZ Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage Temperature Range -40°C to +80° C 240° C(1) Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron] Input Diode Forward DC Current 40 mA Reverse DC Voltage 2V Power Dissipation 100 mW(2) Output Photodetector Collector-Emitter Voltage Phototransistor Photodarlington 30 V 15 V Emitter-Collector Voltage 5V Collector DC Current Power Dissipation 25 mA 100 mW(2) Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ and OPB70HWZ derate linearly 1.82 mW/° C above 25° C. Electrical Characteristics (TA = 25° C unless otherwise noted) (OPB703, OPB703WZ, OPB704, OPB704WZ, OPB705, OPB705WZ, OPB704G, OPB704GWZ, OPB70HWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP265 for additional information — for reference only) VF Forward Voltage - - 1.7 V IF = 40mA IR Reverse Current - - 100 µA VR = 2 V Output Phototransistor (See OP505 for additional information — for reference only) V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100 µA V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IEC = 100µA Collector Dark Current - - 250 nA VCE = 10 V, IF = 0, EE =0 On-State Collector Current OPB70HWZ OPB703, OPB703WZ OPB704, OPB704WZ 0.60 0.30 0.20 - 3.5 2.5 2.5 mA OPB704G, OPB704GWZ 0.50 - 6.0 - - 20 20 ICEO Coupled IC(ON) ICX Crosstalk OPB703, OPB703WZ OPB704, OPB704WZ, OPB70HWZ VCE = 5 V, IF = 40mA , d = 0.15” (4)(6) VCE = 5 V, IF = 40mA , d = 0.20” (4)(6) µA VCE = 5 V, IF = 40mA(5) Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) For OPB703, OPB704 and OPB705, derate linearly 1.67 mW/° C above 25° C. (3) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ, OPB70HWZ, OPB70AWZ, OPB70CWZ, OPB70DWZ, OPB70EWZ, and OPB70FWZ derate linearly 1.82 mW/° C above 25° C. (4) The distance from the assembly face to the reflective surface is d. (5) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface. (6) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog # E 152 7795. (7) All parameters tested using pulse techniques. Electrical Characteristics (TA = 25° C unless otherwise noted) (OPB70AWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP265 for additional information — for reference only) VF Forward Voltage - - 1.7 V IF = 40mA IR Reverse Current - - 100 µA VR = 2 V Output PhotoDarlington (See OP535 for additional information — for reference only) V(BR)CEO Collector-Emitter Breakdown Voltage 15 - - V ICE = 1.0 mA, EE =0 V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IEC = 100µA, EE =0 Collector Dark Current - - 250 nA VCE = 10 V, IF = 0, EE =0 5.0 - 26.0 mA VCE = 5 V, IF = 40mA , d = 0.15” (1)(3) ICEO Coupled IC(ON) On-State Collector Current V(SAT) Saturation Voltage - - 1.15 V IC = 400 µA, IF = 40mA , d = 0.15” (1)(3) Crosstalk - - 25 µA VCE = 5 V, IF = 40mA(2) ICX Notes: (1) The distance from the assembly face to the reflective surface is d. (2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface. (3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog # E 152 7795. Electrical Characteristics (TA = 25° C unless otherwise noted) (OPB70BWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP265 for additional information — for reference only) VF Forward Voltage - - 1.7 V IF = 40mA IR Reverse Current - - 100 µA VR = 2 V Output Phototransistor (See OP705 for additional information — for reference only) V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100 µA V(BR)ECO Emitter-Collector Breakdown Voltage 0.4 - - V IEC = 100µA - - 100 nA VCE = 10 V, IF = 0, EE =0 0.50 - 3.0 mA VCE = 5 V, IF = 40mA , d = 0.15” (1)(3) - - 5 µA VCE = 5 V, IF = 40mA(2) ICEO Collector Dark Current Coupled IC(ON) ICX On-State Collector Current OPB70BWZ Crosstalk OPB70BWZ Notes: (1) The distance from the assembly face to the reflective surface is d. (2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface. (3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog # E 152 7795. Electrical Characteristics (TA = 25° C unless otherwise noted) (OPB70CWZ and OPB70EWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OVLAS6CB8 for additional information — for reference only) VF Forward Voltage - - 2.6 V IF = 40mA IR Reverse Current - - 100 µA VR = 2 V Output Phototransistor (See OP505 for additional information — for reference only) V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100µA, IF = 0, EE =0 V(BR)ECO Emitter-Collector Breakdown Voltage 0.4 - - V IEC = 100µA, IF = 0, EE =0 - - 100 nA VCE = 10 V, IF = 0, EE =0 .10 - 1.0 mA VCE = 5 V, IF = 40mA , d = 0.15” (21(3) ICEO Collector Dark Current Coupled IC(ON) On-State Collector Current V(SAT) ICX OPB70CWZ OPB70EWZ .25 - 2.5 Saturation Voltage - - 0.4 V IC = 100 µA, IF = 40mA , d = 0.15” (1)(3) Crosstalk - - 2 µA VCE = 5 V, IF = 40mA(2) Notes: (1) The distance from the assembly face to the reflective surface is d. (2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface. (3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog # E 152 7795. Electrical Characteristics (TA = 25° C unless otherwise noted) (OPB70DWZ and OPB70FWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OVLAS6CB8 for additional information — for reference only) VF Forward Voltage - - 2.6 V IF = 40mA IR Reverse Current - - 100 µA VR = 2 V Output Phototransistor (See OP505 for additional information — for reference only) V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100µA, IF = 0, EE =0 V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 - - V IEC = 100µA, IF = 0, EE =0 - - 250 nA VCE = 10 V, IF = 0, EE =0 .10 - 1.5 mA VCE = 5 V, IF = 40mA , d = 0.15” (1)(3) ICEO Collector Dark Current Coupled IC(ON) On-State Collector Current V(SAT) ICX OPB70DWZ OPB70FWZ .25 - 3.5 Saturation Voltage - - 0.4 V IC(ON) = 100 µA, IF = 40mA , d = 0.15” (1)(3) Crosstalk - - 5.0 µA VCE = 5 V, IF = 40mA(2) Notes: (1) The distance from the assembly face to the reflective surface is d. (2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface. (3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog # E 152 7795. OPB704 - Output vs Distance OPB703 - Output vs Distance 1.8 1.8 Normalized at IF = 40 mA Distance = 0.15" & Kodak 90% Normalized at IF = 40 mA Distance = 0.15" & Kodak 90% 1.6 1.6 1.4 1.4 Normalized Output 1.2 Normalized Output Kodak 90% Kodak 19% Avery Corporate Retro Reflective 1.0 0.8 0.6 Kodak 90% Kodak 19% Copier Paper Avery Label Retro Reflective 1.2 1.0 0.8 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Distance (inches) Distance (inches) Forward Voltage vs Forward Current vs Temp OPB705 - Output vs Distance 1.6 1.8 Normalized at IF = 40 mA Distance = 0.15" & Kodak 90% Normalized Forward Current at 20 mA and 20° C 1.6 1.4 Kodak 90% Kodak 19% Copier Paper Avery Labels Retro Reflective 1.2 1.0 Typical Forward Voltage Normalized Output 1.4 0.8 0.6 1.2 1.0 -40° C -20° C 0° C 0.4 0.8 20° C 40° C 0.2 60° C 80° C 0.0 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Distance (inches) 0.7 0.8 0.9 1.0 0 5 10 15 20 25 Forward Current (mA) 30 35 40
OPB703WZ
物料型号: - OPB703、OPB704、OPB705 - OPB703WZ、OPB704WZ、OPB705WZ - OPB70AWZ至OPB70HWZ

器件简介: 这些传感器由一个红外(890nm)发光二极管(LED)和一个NPN硅光晶体管、光电达林顿组成,安装在黑色塑料外壳内,用于PCB板安装。某些型号设计用于远程安装,使用26 AWG的连接线。

引脚分配: - 橙色线:阳极(Anode) - 绿线:阴极(Cathode) - 蓝线:发射极(Emitter) - 白线:集电极(Collector)

参数特性: - 存储温度范围:-40°C至+80°C - 输入二极管的正向直流电流:40mA - 输出光晶体管的集电极-发射极击穿电压:30V

功能详解: 光晶体管在发射器发光且反射物体通过其视野中心时响应照明,通常位于0.15英寸(3.8毫米)处。

应用信息: - 非接触式反射物体检测 - 装配线自动化 - 机器自动化 - 机器安全 - 行程末端传感器 - 门传感器 - 标记检测 - 办公设备

封装信息: 提供不同版本的传感器,包括用于防尘保护和环境光过滤的镜头选项,以及提供定制的电气、导线、电缆和连接器。
OPB703WZ 价格&库存

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