OPI150TXV

High Reliability Optically Coupled Isolator OPI150TX & OPI150TXV Obsolete Features: • High current transfer ratio • 50 kV electrical isolation • Base contact lead for conventional transistor biasing • TX and TXV devices processed to MIL-PRF-19500 Description: Each OPI150TX and OPI150TXV is an optically coupled isolator that consists of a gallium aluminum arsenide infrared light emitting diode (OP235TX or OP235TXV) which is optically coupled to a NPN silicon phototransistor component (OP804TX or OP804TXV) by means of a light pipe and sealed in a high dielectric plastic housing. These devices are designed for applications that require high voltage isolation between input and output. TX and TXV device components are processed to OPTEK’s military screening program patterned after MIL-PRF-19500. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Contact your local representative or OPTEK for more information. Applications: • • • • • Requiring high voltage isolation between input and output Electrical isolation in dirty environments Industrial equipment Medical equipment Office equipment LED Isolation VCE Lead Part Peak Voltage CTR IF (mA) (Volts) Length / Number Wavelength Sensor (,000) Min / Max Typ / Max Max Spacing OPI150TX Obsolete per EOL1022 Replace0.40" / ment 890 nm Transistor 50 10 / NA 16 / 50 30 3.16" OPI150 OPI150TXV Obsolete per EOL1022 * CATHODE LEAD. OTHER LEADS ARE .060 (1.52) NOM LONGER. DIMETNSION ARE IN INCHES (MILLIMETERS) ** THIS DIMENSION IS CONTROLLED AT THE HOUSING SURFACE General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc Pin# LED Pin# Transistor 1 Anode 4 Collector 2 Cathode 3 Emitter TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Rev C 03/2022 Page 1 High Reliability Optically Coupled Isolator OPI150TX & OPI150TXV Obsolete Electrical Specifications Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Operating Temperature Range -65° C to +125° C Storage Temperature Range -65° C to +150° C (1) Input-to-Output Isolation Voltage ±50 kVDC Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 seconds with soldering iron] 260° C Input Diode Continuous Forward Current Reverse Voltage Power Dissipation(2) 100 mA 2V 200 mW Output Photosensor Continuous Collector Current 50 mA Collector-Base Voltage 50 V Collector-Emitter Voltage 50 V Emitter-Base Voltage Power Dissipation(3) General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc 7V 250 mW TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Rev C 03/2022 Page 2 High Reliability Optically Coupled Isolator OPI150TX & OPI150TXV Obsolete Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP236TX for additional information - for reference only) VF Forward Voltage IR (5) 1.00 1.40 1.70 1.20 1.60 1.90 0.90 1.15 1.50 - 0.10 10 Reverse Current IF = 30 mA V IF = 30 mA, TA = -55° C IF = 30 mA, TA = 100° C µA VR = 2 V Output Phototransistor (See OP805TX for additional information - for reference only) V(BR)CBO Collector-Base Breakdown Voltage 50 10 - V IC = 100 µA , IE = 0, IF = 0 V(BR)CEO Collector-Emitter Breakdown Voltage 50 80 - V IC = 1 mA , IB= 0, IF = 0 V(BR)EBO Emitter-Base Breakdown Voltage 7 11 - V IE = 100 µA , IC = 0, IF = 0 - 0.20 100 na VCE = 10 V, IB = 0, IF = 0 - 10 100 µA VCE = 10 V, IB = 0, IF = 0, TA = 100° C - 0.10 10 nA VCB = 10 V, IE = 0, IF = 0 ICEO Collector-Emitter Dark Current ICBO Collector-Base Dark Current Notes: (1) (2) (3) (4) (5) Measured with input leads shorted together and output leads shorted together in air with a maximum relative humidity of 50 %. Derate linearly 2.00 mW/° C above 25° C. Derate linearly 2.50 mW/° C above 25° C. Methanol or isopropanol are recommended as cleaning agents. Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause change in measurement results. Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS 1.0 - - 0.6 - - 0.6 - - - 0.20 0.30 V IC = 1 mA, IB = 0, IF = 16 mA 50 - - kV See note 2. µs VCC = 10 V, IC = 2 mA, RL = 100 Ω Combined IC(ON) VCE(SAT) VISO On-State Collector Current (1) Collector-Emitter Saturation Voltage Isolation Voltage (Input to Output) (2) tr Output Rise Time - 8 15 tf Output Fall Time - 8 15 VCE = 5 V, IB = 0, IF = 10 mA mA VCE = 5 V, IB = 0, IF = 10 mA, TA = -55° C VCE = 5 V, IB = 0, IF = 10 mA, TA = 100° C Notes: (1) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause change in measurement results. (2) Measured with input leads shorted together and output leads shorted together in air with a maximum relative humidity of 50 %. General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Rev C 03/2022 Page 3