10BQ030

Bulletin PD-20708 rev. D 02/02 10BQ030 SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM VF TJ @ tp= 5 ms sine @ 1.0Apk, TJ= 125°C range Description/Features Units A V A V °C The 10BQ030 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Small foot print, surface mountable Very low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability 10BQ030 1.0 30 430 0.30 - 55 to 150 Device Marking: IR1E CATHODE ANODE 2.15 (.085) 1.80 (.071) 3.80 (.150) 3.30 (.130) 1 2 4.70 (.185) 4.10 (.161) 1 POLARITY 2 PART NUMBER 2.40 (.094) 1.90 (.075) 1.30 (.051) 0.76 (.030) 0.30 (.012) 0.15 (.006) 5.60 (.220) 5.00 (.197) 2.5 TYP. (.098 TYP.) SOLDERING PAD 2.0 TYP. (.079 TYP.) 4.2 (.165) 4.0 (.157) Outline SMB Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 1 0BQ030 Bulletin PD-20708 rev. D 02/02 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 10BQ030 30 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 6 Non-Repetitive Avalanche Energy Repetitive Avalanche Current 10BQ 1.0 430 90 9.0 1.0 Units A Conditions 50% duty cycle @ TL = 106 °C, rectangular wave form. Following any rated 5µs Sine or 3µs Rect. pulse load condition and 10ms Sine or 6ms Rect. pulse with rated VRRM applied TJ = 25 °C, IAS = 1.0A, L = 10mH mJ A Electrical Specifications Parameters VFM VFM Max. Forward Voltage Drop Max. Forward Voltage Drop (1) (1) 10BQ 0.420 0.470 0.300 0.370 0.5 Units V V V V mA mA mA pF nH V/µs @ 1A @ 2A @ 1A @ 2A TJ = 25 °C TJ = 100 °C TJ = 125 °C Conditions TJ = 25 °C TJ = 125 °C IRM CT LS Max. Reverse Leakage Current (1) 5.0 15 VR = rated VR Max. Junction Capacitance Typical Series Inductance (Rated VR) 200 2.0 10000 VR = 5VDC, (test signal range 100KHz to 1Mhz) 25°C Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change (1) Pulse Width < 300µs, Duty Cycle < 2% Thermal-Mechanical Specifications Parameters TJ Tstg Max. Storage Temperature Range 10BQ - 55 to 150 25 80 Units °C °C °C/W DC operation °C/W Conditions Max.Junction Temperature Range (*) - 55 to 150 RthJL Max. Thermal Resistance Junction to Lead (**) RthJA Max. Thermal Resistance Junction to Ambient wt Approximate Weight Case Style Device Marking (*) dPtot dTj < 1 Rth( j-a) 0.10(0.003) g (oz.) SMB IR1E Similar DO-214AA thermal runaway condition for a diode on its own heatsink (**) Mounted 1 inch square PCB 2 www.irf.com 1 0BQ030 Bulletin PD-20708 rev. D 02/02 10 T J = 125 C Reverse C urren t - I R (m A) 10 1 100 C 75 C 50 C 0 .01 25 C 0.0 01 0.1 In sta n ta neous Forw ard C urrent - I F (A) 0 .00 0 1 0 T J = 125 C T J = 25 C 1 10 20 30 Reverse V olta ge - VR (V ) Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage 1 0 00 Junc tion Ca pa citan ce - C T (p F) TJ = 25 C 10 0 0.1 0 0.2 0.4 0 .6 0 .8 F orw ard V oltage D rop - V FM (V ) Fig. 1 - Maximum Forward Voltage Drop Characteristics 10 0 10 20 30 Reverse V oltag e - VR (V ) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage www.irf.com 3 1 0BQ030 Bulletin PD-20708 rev. D 02/02 1 30 A llow ab le C a se Tem p era ture - ( C ) DC 1 20 0.5 A vera ge Pow er Loss - (W a tts) D D D D D = = = = = 0.20 0.25 0.33 0.50 0.75 DC RM S Lim it 0.2 0.4 1 10 D D D D D = = = = = 0.20 0.25 0.33 0.50 0.75 0.3 1 00 Squa re w ave (D = 0.50) 80% Ra ted VR a pp lied see note (2) 0.1 90 0 0 .4 0.8 1 .2 1 .6 A vera ge Forw a rd C urren t - I F(AV) (A) 0 0 0 .4 0 .8 1.2 1 .6 Averag e Forw ard C urrent - I F(AV ) (A ) Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current 1000 N on-Rep etitive Surg e C urrent - I FS M (A ) 100 At An y Ra ted Load C on dition An d W ith Rated V RRM Ap plied Follow in g Surg e 10 10 100 1000 10000 Squa re W a ve Pulse D ura tion - t p (m icrosec) Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 1 0BQ030 Bulletin PD-20708 rev. D 02/02 Tape & Reel Information Dimensions in millimeters and (inches) Marking & Identification Each device has 8 characters, configurated 4 digits on two rows, for identification. The first row designates the device as manufactured by International Rectifier as indicated by the letters "IR", and the Part Number ( indicates the current rating and voltage/process). The second row indicates the year and the week of manufacturing. Ordering Information 10BQ SERIES - TAPE AND REEL WHEN ORDERING, INDICATE THE PART NUMBER AND THE QUANTITY ( IN MULTIPLES OF 3000 PIECES). EXAMPLE: 10BQ030TR - 6000 PIECES 10BQ SERIES - BULK QUANTITIES I R 1E Voltage/ Process Current Rating (1A) IR logo C E F H J = = = = = 15 V 30 V 40 V 60 V 100 V WHEN ORDERING, INDICATE THE PART NUMBER AND THE QUANTITY ( IN MULTIPLES OF 250 PIECES). EXAMPLE: 10BQ030 - 500 PIECES YY WW (Date Code) Week Year www.irf.com 5 1 0BQ030 Bulletin PD-20708 rev. D 02/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/02 6 www.irf.com