10BQ100TR

Bulletin PD-20786 rev. A 07/04 10BQ100PbF SCHOTTKY RECTIFIER 1 Amp IF(AV) = 1.0Amp VR = 100V Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 µs sine VF TJ @ 1.0 Apk, TJ=125°C range Description/ Features Units A V A V °C The 10BQ100PbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Small foot print, surface mountable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Lead-Free ("PbF" suffix) Value 1.0 100 780 0.62 - 55 to 175 Case Styles 10BQ100PbF SMB www.irf.com 1 10BQ100PbF Bulletin PD-20786 rev. A 07/04 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 10BQ100PbF 100 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current Non- Repetitive Avalanche Energy Repetitive Avalanche Current 10BQ 1.0 780 38 1.0 0.5 Units Conditions A A 50% duty cycle @ T L = 152 °C, rectangular wave form 5µs Sine or 3µs Rect. pulse 10ms Sine or 6ms Rect. pulse mJ A TJ = 25 °C, IAS = 0.5A, L = 8mH Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. Va = 1.5 x Vr typical Following any rated load condition and with rated V RRM applied Electrical Specifications Parameters VFM Max. Forward Voltage Drop * See Fig. 1 (1) 10BQ 0.78 0.89 0.62 0.72 Units V V V V mA mA pF nH V/ µs @ 1A @ 2A @ 1A @ 2A TJ = 25 °C TJ = 125 °C Conditions TJ = 25 °C TJ = 125 °C VR = rated VR IRM CT LS Max. Reverse Leakage Current (1) * See Fig. 2 Typical Junction Capacitance Typical Series Inductance (Rated VR) 0.5 1 42 2.0 10000 VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C Measured lead to lead 5mm from package body dv/dt Max. Volatge Rate of Charge (1) Pulse Width < 300µs, Duty Cycle < 2% Thermal-Mechanical Specifications Parameters TJ Tstg Max. Storage Temperature Range 10BQ - 55 to 175 36 80 Units °C °C °C/W DC operation °C/W Conditions Max. Junction Temperature Range (*) - 55 to 175 RthJL Max. Thermal Resistance Junction to Lead (**) RthJA Max. Thermal Resistance Junction to Ambient wt Approximate Weight Case Style Device Marking (*) dPtot dTj < 1 Rth( j-a) 0.10 (0.003) g (oz.) SMB IR1J Similar DO-214AA thermal runaway condition for a diode on its own heatsink (**) Mounted 1 inch square PCB 2 www.irf.com 10BQ100PbF Bulletin PD-20786 rev. A 07/04 10 Reverse Current - I R (mA) 10 Tj = 175˚C 1 0.1 0.01 0.001 0.0001 0.00001 0 150˚C 125˚C 100˚C Tj = 175˚C Tj = 125˚C (A) 75˚C 50˚C Tj = 25˚C Instantaneous Forward Current - I F 25˚C 20 40 60 80 100 1 Reverse Voltage - VR (V) Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage 100 Junction Capacitance - C T (p F) T = 25˚C J 0.1 0.2 10 0.4 0.6 0.8 1 0 20 40 60 80 100 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 100 (°C/W) 10 Thermal Impedance Z D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 thJC PDM t1 1 Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = t1/ t2 t2 . . 2. Peak Tj = Pdm x ZthJC + Tc 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (Per Leg) www.irf.com 3 10BQ100PbF Bulletin PD-20786 rev. A 07/04 180 Allowable Lead Temperature (°C) 1 DC Average Power Loss (Watts) D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 170 160 150 140 0.8 0.6 0.4 0.2 0 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMS Limit DC 130 Square wave (D = 0.50) Rated Vr applied 120 110 0 0.4 0.8 1.2 1.6 Average Forward Current - I F(AV) (A) Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature see note (2) 0 0.3 0.6 0.9 1.2 1.5 Average Forward Current - I F(AV) (A) Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current 1000 Non-Repetitive Surge Current - I (A) FSM 100 At Any Rated Load Condition And With rated Vrrm Applied Following Surge 10 10 100 1000 10000 Square Wave Pulse Duration - Tp (Microsec) Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); Pd REV = Inverse Power Loss = VR1 x I R (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 10BQ100PbF Bulletin PD-20786 rev. A 07/04 Outline Table Device Marking: IR1J CATHODE ANODE 2.15 (.085) 1.80 (.071) 3.80 (.150) 3.30 (.130) 1 2 4.70 (.185) 4.10 (.161) 1 POLARITY 2 PART NUMBER 2.40 (.094) 1.90 (.075) 1.30 (.051) 0.76 (.030) 0.30 (.012) 0.15 (.006) 5.60 (.220) 5.00 (.197) 2.5 TYP. (.098 TYP.) SOLDERING PAD 2.0 TYP. (.079 TYP.) 4.2 (.165) 4.0 (.157) Outline SMB Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994 Marking & Identification Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID. IR1J VOLTAGE CURRENT IR LOGO PYWWX SITE ID WEEK 2nd digit of the YEAR "Y" = 1st digit of the YEAR "standard product" "P" = "Lead-Free" www.irf.com 5 10BQ100PbF Bulletin PD-20786 rev. A 07/04 Tape & Reel Information Dimensions in millimetres and (inches) Ordering Information Table Device Code 10 1 1 2 3 4 5 6 - B 2 Q 3 100 4 TR PbF 5 6 Current Rating B = Single Lead Diode Q = Schottky Q Series Voltage Rating (100 = 100V) none = Box (1000 pieces) TR = Tape & Reel (3000 pieces) none = Standard Production PbF = Lead-Free 10BQ100 ******************************************************************************** * SPICE Model Diode * ******************************************************************************** .SUBCKT 10BQ100 ANO CAT D1 ANO 1 CAT *Define diode model .model D10BQ100 D(Is=341.4E-06 N=2.664 Rs=3.65E-03 Ikf=37.08E-03 Xti=2 Eg=1.11 + Cjo=65.57E-12 M=.5751 Vj=4.282 Fc=0.5 Isr=17.26E-27 Nr=5.662 + Bv=119.9 Ibv=215.5E-06 Tt=43.28E-09) ******************************************************************************** .ENDS 10BQ100 6 www.irf.com 10BQ100PbF Bulletin PD-20786 rev. A 07/04 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/04 www.irf.com 7