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10ETF10

10ETF10

  • 厂商:

    IRF

  • 封装:

  • 描述:

    10ETF10 - FAST SOFT RECOVERY RECTIFIER DIODE - International Rectifier

  • 数据手册
  • 价格&库存
10ETF10 数据手册
I2146 rev. A 11/99 QUIETIR Series 10ETF.. FAST SOFT RECOVERY RECTIFIER DIODE VF trr Description/Features The 10ETF.. fast soft recovery QUIETIR rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. Typical applications are both: output rectification and freewheeling in inverters, choppers and converters and input rectifications where severe restrictions on conducted EMI should be met. < 1.33V @ 10A = 80ns VRRM 1000 to 1200V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal waveform VRRM IFSM VF trr TJ @ 10 A, TJ = 25°C @ 1A, 100A/µs Package Outline Units A V A V ns 10ETF.. 10 1000 to 1200 160 1.33 80 - 40 to 150 TO-220AC °C 1 10ETF.. QUIETIR Series I2146 rev. A 11/99 Voltage Ratings Part Number VRRM , maximum peak reverse voltage V 1000 1200 VRSM , maximum non repetitive peak reverse voltage V 1100 1300 IRRM 150°C mA 4 10ETF10 10ETF12 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM I2 t Max. Peak One Cycle Non-Repetitive Surge Current Max. I2t for fusing 10ETF.. 10 160 Units A A Conditions @ T C = 125° C, 180° conduction half sine wave 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied 185 128 180 A2 s A √s 2 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied t = 0.1 to 10ms, no voltage reapplied I √t 2 Max. I √t for fusing 2 1800 Electrical Specifications Parameters VFM rt Max. Forward Voltage Drop Forward slope resistance 10ETF.. 1.33 22.9 0.96 0.1 4 Units V mΩ V mA Conditions @ 10A, TJ = 25°C TJ = 150°C VF(TO) Threshold voltage I RM Max. Reverse Leakage Current TJ = 25 °C TJ = 150 °C VR = rated VRRM Recovery Characteristics Parameters t rr I rr Qrr S Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge Typical Snap Factor 10ETF.. 310 4.7 1.05 0.6 Units ns A µC Conditions I F @ 10Apk @ 25A/ µs @ 25°C 2 10ETF.. QUIET IR Series I2146 rev. A 11/99 Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range 10ETF.. - 40 to 150 - 40 to 150 1.5 62 0.5 2 (0.07) Min. Max. 6 (5) 12 (10) Units °C °C °C/W °C/W °C/W g (oz.) Kg-cm (Ibf-in) Conditions RthJC Max. Thermal Resistance Junction to Case RthJA Max. Thermal Resistance Junction to Ambient RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Case Style M a x im u m A llo w a ble C a se T e m p e r at u re (°C ) 1 50 1 45 1 40 C o nduc tio n A ng le DC operation Mounting surface , smooth and greased TO-220AC JEDEC M a xim u m A llo w a b le C a se T e m p e rat u re ( ° C ) 1 50 1 45 1 40 1 35 1 30 30° 1 25 1 20 1 15 0 2 4 6 8 10 12 14 16 A v e ra g e Fo rw a rd C u rre n t (A ) 6 0° 90° 120° 1 80° DC Co nd uc tio n Pe rio d 1 0 E T F.. Se rie s R thJC (D C ) = 1 .5 °C / W 1 0 E T F.. Se rie s R thJC (D C ) = 1 .5 ° C / W 1 35 1 30 30 ° 1 25 1 20 1 15 0 2 4 6 8 10 12 A v e ra g e F o rw a rd C ur re n t (A ) 6 0° 90° 120° 180° Fig. 1 - Current Rating Characteristics M a x im u m A v e r ag e Fo rw a rd Po w e r Lo s s ( W ) Maxim um Average Forward Pow er Loss (W ) 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 Average Forw ard Current (A) 10.TF.. Series T J = 150 °C C o nd uctio n A ng le Fig. 2 - Current Rating Characteristics 24 20 16 12 R M S Lim it 8 4 0 0 2 4 6 8 10 12 14 16 A v e ra g e Fo rw a rd C u rre n t (A ) C o ndu ction Pe rio d 180 ° 120 ° 90 ° 60 ° 30 ° R MS Lim it DC 180° 120° 90° 60° 30° 1 0 E T F.. S e rie s T J = 1 5 0 °C Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics 3 10ETF.. QUIETIR Series I2146 rev. A 11/99 P e a k H a lf S in e W a v e F o r w a r d C u rre n t ( A ) A t A n y R a t e d L o a d C o n d itio n A n d W ith R a te d VRRM A p p lie d Fo llo w in g S u rg e . Peak Half Sin e W ave Forward Current (A) 1 80 1 60 1 40 1 20 1 00 80 60 40 1 200 180 160 140 120 100 80 60 40 0.01 M a xim u m N o n R e pe titiv e Surge C urre nt V ersus Pulse Train Duration. In itia l T J = 1 5 0 ° C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s In itial T J = 150° C No Voltage Reapplied Rated VRR M Reapplied 1 0ET F.. Series 10E TF.. Se ries 0.1 Pulse Train Duration (s) 1 10 10 0 N um b er O f Eq ua l A m plitu de Half C ycle C ur rent P u ls es (N ) Fig. 5 - Maximum Non-Repetitive Surge Current 1 0 00 Instan tan eous For ward Cur rent (A) Fig. 6 - Maximum Non-Repetitive Surge Current T J= 25° C 10 0 T J = 150 °C 10 1 0ETF.. Ser ies 1 0.5 1 1. 5 2 2 .5 3 3 .5 4 4 .5 Instan taneous Forward Voltage (V ) Fig. 7 - Forward Voltage Drop Characteristics M a xim u m R e v e rse R e c o v e ry Tim e - T rr (µ s) M a xim u m R e v e rse R e c o v e ry Tim e - T rr (µs) 0 .6 0 .5 0 .4 0 .3 0 .2 0 .1 0 0 40 80 12 0 16 0 20 0 R a te O f F a ll O f Fo rw a rd C u rre n t - d i/ d t (A / µs ) I FM = 1 0 A 8A 5A 2A 1A 0 .8 1 0 E T F.. S e rie s T J = 150 ° C 0 .6 1 0 E T F.. S e r ie s T J = 2 5 °C 0 .4 I FM = 1 0 A 8A 5A 2A 1A 0 .2 0 0 40 80 12 0 1 60 2 00 Ra t e O f Fa ll O f F o rw a rd C u rre n t - d i/d t (A / µ s) Fig. 8 - Recovery Time Characteristics, T J = 25°C Fig. 9 - Recovery Time Characteristics, T J = 150°C 4 10ETF.. QUIET IR Series I2146 rev. A 11/99 M a x im u m R e v e rse R e c o v e ry C h a rg e - Q r r (µ C ) M a xim u m R e v er se R e c o v e r y C h arg e - Q rr (µ C ) 2 1 0 E T F .. Se rie s T J = 2 5 °C 1 .6 8A I FM = 1 0 A 5 1 0 E T F.. S e r ie s T J = 150 ° C 4 8A IFM = 10 A 1 .2 5A 3 5A 0 .8 2A 2 2A 0 .4 1A 1 1A 0 0 40 80 12 0 160 20 0 R a t e O f F a ll O f Fo rw a rd C u rre n t - d i/ dt (A / µ s) 0 0 40 80 120 1 60 20 0 R a t e O f F a ll O f Fo rw a rd C ur re n t - d i/d t (A /µ s) Fig. 10 - Recovery Charge Characteristics, T J = 25°C M a x im um R e v e rse R e c o v e ry C u rre n t - Irr ( A ) 20 1 0E T F.. Se ries T J = 25 °C 16 I FM = 1 0 A 8A 5A Fig. 11 - Recovery Charge Characteristics, TJ = 150°C M ax im um R e v e r se R e c o v er y C u rre n t - I rr ( A ) 25 1 0 ET F.. Se ries T J = 150 °C 20 8A I FM = 10 A 12 2A 15 5A 2A 8 1A 10 1A 4 5 0 0 40 80 120 1 60 20 0 R a t e O f F a ll O f Fo rw a rd C u rre n t - d i/ d t ( A / µs ) 0 0 40 80 120 1 60 2 00 R a t e O f Fa ll O f F o r w a r d C u rre n t - d i/ d t ( A / µ s) Fig. 12 - Recovery Current Characteristics, TJ = 25°C T ran sie n t T h e rm al Im pe da n c e Z thJ C ( ° C / W ) 10 Fig. 13 - Recovery Current Characteristics, TJ = 150°C Stea dy Sta te V alue (DC Op er ation) 1 D D D D D = = = = = 0 .50 0 .33 0 .25 0 .17 0 .08 0 .1 0 .0 1 Sin gle Pulse 1 0E TF. . Series 0 .0 0 1 0. 001 0 .0 1 0 .1 Squa re W av e Pulse Du ration (s) 1 10 Fig. 14 - Thermal Impedance ZthJC Characteristics 5 10ETF.. QUIETIR Series I2146 rev. A 11/99 Outline Table 10.54 (0.41) 2 MAX. 1.32 (0.05) 3.78 (0.15) DIA. 3.54 (0.14) 2.92 (0.11) 2.54 (0.10) TERM 2 6.48 (0.25) 6.23 (0.24) 2° 1.22 (0.05) 15.24 (0.60) 14.84 (0.58) 1 14.09 (0.55) 13.47 (0.53) 3 3.96 (0.16) 3.55 (0.14) 2.04 (0.080) MAX. 0.10 (0.004) 1.40 (0.05) 1.15 (0.04) 0.94 (0.04) 0.69 (0.03) 2.89 (0.11) 2.64 (0.10) 1 4.57 (0.18) 4.32 (0.17) 3 0.61 (0.02) MAX. 5.08 (0.20) REF. Dimensions in millimeters and inches Ordering Information Table Device Code 10 1 1 2 3 4 5 6 - E 2 T 3 F 4 12 BASE CATHODE 5 1 CATHODE 2 Current Rating Circuit Configuration: E = Single Diode Package: T = TO-220AC Type of Silicon: F = Fast Soft Recovery Rectifier Voltage code: Code x 100 = VRRM 10 = 1000V 12 = 1200V 3 ANODE 6 10ETF.. QUIET IR Series I2146 rev. A 11/99 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. 7
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