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10ETF12

10ETF12

  • 厂商:

    IRF

  • 封装:

  • 描述:

    10ETF12 - FAST SOFT RECOVERY RECTIFIER DIODE - International Rectifier

  • 数据手册
  • 价格&库存
10ETF12 数据手册
Bulletin I2188 12/04 QUIETIR Series 10ETF12PbF FAST SOFT RECOVERY RECTIFIER DIODE Lead-Free ("PbF" suffix) VF trr < 1.33V @ 10A = 80ns VRRM = 1200V Description/ Features The 10ETF12PbF fast soft recovery QUIETIR rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. Typical applications are both: output rectification and freewheeling in inverters, choppers and converters and input rectifications where severe restrictions on conducted EMI should be met. Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal waveform VRRM IFSM VF trr TJ @ 10 A, TJ = 25°C @ 1A, 100A/µs Package Outline Units A V A V ns °C Values 10 1200 160 1.33 80 - 40 to 150 TO-220AC www.irf.com 1 10ETF12PbF QUIETIR Series Bulletin I2188 12/04 Voltage Ratings Part Number 10ETF12 VRRM , maximum peak reverse voltage V 1200 VRSM , maximum non repetitive peak reverse voltage V 1300 IRRM 150°C mA 4 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM It 2 10ETF.. 10 160 185 128 180 Units A A A2s A √s 2 Conditions @ TC = 125° C, 180° conduction half sine wave 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied t = 0.1 to 10ms, no voltage reapplied Max. Peak One Cycle Non-Repetitive Surge Current Max. I t for fusing 2 I √t 2 Max. I √t for fusing 2 1800 Electrical Specifications Parameters VFM rt IRM Max. Forward Voltage Drop Forward slope resistance 10ETF.. 1.33 22.9 0.96 0.1 4 Units V mΩ V mA Conditions @ 10A, TJ = 25°C TJ = 150°C VF(TO) Threshold voltage Max. Reverse Leakage Current TJ = 25 °C TJ = 150 °C VR = rated V RRM Recovery Characteristics Parameters trr Irr Qrr S Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge Typical Snap Factor 10ETF.. 310 4.7 1.05 0.6 Units ns A µC Conditions IF @ 10Apk @ 25A/ µs @ 25°C 2 www.irf.com 10ETF12PbF QUIETIR Series Bulletin I2188 12/04 Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range 10ETF.. - 40 to 150 - 40 to 150 1.5 62 0.5 2 (0.07) Min. Max. 6 (5) 12 (10) Units °C °C °C/W °C/W °C/W g (oz.) Kg-cm (Ibf-in) Conditions RthJC Max. Thermal Resistance Junction to Case RthJA Max. Thermal Resistance Junction to Ambient RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Case Style Marking Device Maximum Allowable Case Temperature (°C) 150 145 140 135 130 30° 125 120 115 60° 90° 120° 180° 0 2 4 6 8 10 Cond uction Angle DC operation Mounting surface , smooth and greased TO-220AC 10ETF12 10ET S F.. eries R thJC (DC) = 1.5 °C/ W JEDEC Maximum Allowa ble Case T emperature (°C) 150 145 140 135 130 30° 125 120 115 60° 10E TF.. S eries R thJC (DC) = 1.5 °C/ W Conduc tion Period 90° 120° 180° 12 DC 14 16 12 0 2 4 6 8 10 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Maximum Average F orward Power Los (W) s Fig. 2 - Current Rating Characteristics Ma ximum Average Forward Power Loss (W) 24 20 16 12 RMS Limit 8 4 0 Conduction Period 16 14 12 10 8 6 4 2 0 0 2 180° 120° 90° 60° 30° RMS Limit DC 180° 120° 90° 60° 30° Conduction Angle 10.T S F.. eries T J = 150°C 4 6 8 10 10ET S F.. eries TJ = 150°C 0 2 4 6 8 10 12 14 16 Average Forward Current (A) Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics www.irf.com 3 10ETF12PbF QUIETIR Series Bulletin I2188 12/04 Peak Half S Wave Forward Current (A) ine Peak Half Sine Wave F orward Current (A) 180 160 140 120 100 80 60 40 1 At Any Rated Load Condition And With Rated V ollowing S urge. RRM Ap plied F 200 180 160 140 120 100 80 60 40 0.01 Initial T = 150°C J @60 Hz 0.0083 s @50 Hz 0.0100 s Maximum Non Repetitive S urge Current VersusPulse T rain Duration. Initial T = 150°C J No Voltage R eapp lied R ated VRRM R eapplied 10E F S T .. eries 10ET .. S F eries 0.1 Pulse T rain Duration (s) 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 1000 Instantaneous F orward Current (A) Fig. 6 - Maximum Non-Repetitive Surge Current TJ= 25°C 100 TJ= 150°C 10 10ET S F.. eries 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous F orward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Maximum Reverse R ecovery T ime - T (µs) rr Maximum R evers R e ecovery T ime - T (µs) rr 0.6 0.5 0.4 0.3 0.2 0.1 0 I FM = 10 A 8A 5A 2A 1A 0.8 10ET .. S F eries TJ = 150 °C 0.6 10ET S F.. eries TJ = 25 °C 0.4 I FM = 10 A 8A 5A 2A 1A 0.2 0 40 80 120 160 200 0 0 40 80 120 160 200 Rate Of F Of F all orward Current - di/ dt (A/ µs) R ate Of F Of Forwa rd Current - di/ dt (A/ µs) all Fig. 8 - Recovery Time Characteristics, TJ = 25°C Fig. 9 - Recovery Time Characteristics, TJ = 150°C 4 www.irf.com 10ETF12PbF QUIETIR Series Bulletin I2188 12/04 Maximum R everse R ecovery Charge - Qrr (µC) Maximum Revers R e ecovery Charge - Qrr (µC) 2 10ET S F.. eries TJ = 25 °C I FM = 10 A 5 10ET S F.. eries TJ = 150 °C 4 8A I FM = 10 A 1.6 8A 1.2 5A 3 5A 0.8 2A 2 2A 0.4 1A 1 1A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 Rate Of Fall Of Forward Current - di/ dt (A/ µs) R ate Of F Of Forward Current - di/ dt (A/ µs) all Fig. 10 - Recovery Charge Characteristics, TJ = 25°C Maximum R everse R ecovery Current - Irr (A) 20 10ET .. S F eries TJ = 25 °C 16 I FM = 10 A 8A 5A 2A Fig. 11 - Recovery Charge Characteristics, TJ = 150°C Maximum R evers R e ecovery Current - Irr (A) 25 10ET S F.. eries TJ = 150 °C 20 8A I FM = 10 A 12 15 5A 2A 8 1A 10 1A 4 5 0 0 40 80 120 160 200 0 0 40 80 120 160 200 R ate Of F Of Forward Current - di/ dt (A/ µs) all Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 12 - Recovery Current Characteristics, TJ = 25°C T ransient T hermal Impedanc e Z thJC (°C/W) 10 Fig. 13 - Recovery Current Characteristics, TJ = 150°C S teady S tate Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 0.01 S ingle Pulse 0.001 0.001 10E F.. S T eries 0.01 0.1 S quare Wave Pulse Duration (s) 1 10 Fig. 14 - Thermal Impedance ZthJC Characteristics www.irf.com 5 10ETF12PbF QUIETIR Series Bulletin I2188 12/04 Outline Table 10.54 (0.41) MAX. 2 3.78 (0.15) 3.54 (0.14) 15.24 (0.60) 14.84 (0.58) 1 14.09 (0.55) 13.47 (0.53) 3 3.96 (0.16) 3.55 (0.14) 2.04 (0.080) MAX. 1.40 (0.05) 1.15 (0.04) 0.94 (0.04) 0.69 (0.03) 2.89 (0.11) 2.64 (0.10) 0.10 (0.004) 2.92 (0.11) 2.54 (0.10) TERM 2 DIA. 6.48 (0.25) 6.23 (0.24) 2° 1.32 (0.05) 1.22 (0.05) Base Cathode 2 1 4.57 (0.18) 4.32 (0.17) 3 0.61 (0.02) MAX. Cathode 1 3 Anode 5.08 (0.20) REF. Dimensions in millimeters and inches Part Marking Information IRMX Assembly Line EXAMPLE: THIS IS A 10ETF12 LOT CODE 1789 ASSEMBLED ON WW 19, 2001 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO PART NUMBER DATE CODE ASSEMBLY LOT CODE YEAR 1 = 2001 WEEK 19 P = LEAD-FREE 6 www.irf.com 10ETF12PbF QUIETIR Series Bulletin I2188 12/04 Ordering Information Table Device Code 10 1 1 2 3 4 5 6 6 - E 2 T 3 F 4 12 5 PbF 6 Current Rating (10 = 10A) Circuit Configuration: E = Single Diode Package: T = TO-220AC Type of Silicon: F = Fast Soft Recovery Rectifier Voltage Rating (12 = 1200V) none = Standard Production PbF = Lead-Free Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/04 www.irf.com 7
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