10ETS12

10ETS12

  • 厂商:

    IRF

  • 封装:

  • 描述:

    10ETS12 - INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix) - International Rectifier

  • 详情介绍
  • 数据手册
  • 价格&库存
10ETS12 数据手册
Bulletin I2191 12/04 SAFEIR Series 10ETS12PbF INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix) VF < 1V @ 10A IFSM = 200A Description/ Features The 10ETS12PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150°C junction temperature. Typical applications are in input rectification and these products are designed to be used with International Rectifier Switches and Output Rectifiers which are available in identical package outlines. VRRM = 1200V Output Current in Typical Applications Applications Capacitive input filter TA = 55°C, TJ = 125°C common heatsink of 1°C/ W Single-phase Bridge 12.0 Three-phase Bridge 16.0 Units A Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal waveform VRRM IFSM VF TJ @ 10 A, TJ = 25°C Package Outline Units A V A V °C Values 10 1200 200 1.1 - 40 to 150 TO-220AC www.irf.com 1 10ETS12PbF SAFEIR Series Bulletin I2191 12/04 Voltage Ratings VRRM , maximum Part Number peak reverse voltage V 1200 VRSM , maximum non repetitive peak reverse voltage V 1300 IRRM 150°C mA 0.5 10ETS12PbF Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM I2t Max. Peak One Cycle Non-Repetitive Surge Current Max. I2t for fusing Values 10 170 200 130 145 Units A A A2s A √s 2 Conditions @ TC = 105° C, 180° conduction half sine wave 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied t = 0.1 to 10ms, no voltage reapplied I √t 2 Max. I √t for fusing 2 1450 Electrical Specifications Parameters VFM rt IRM Max. Forward Voltage Drop Forward slope resistance Values 1.1 20 0.82 0.05 0.50 Units V mΩ V mA Conditions @ 10A, TJ = 25°C TJ = 150°C TJ = 25 °C TJ = 150 °C VF(TO) Threshold voltage Max. Reverse Leakage Current VR = rated VRRM Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range Values - 40 to 150 - 40 to 150 2.5 62 240 2 (0.07) Units °C °C °C/W °C/W °C g (oz.) Conditions RthJC Max. Thermal Resistance Junction to Case RthJA Max. Thermal Resistance Junction to Ambient (PCB Mount)* Ts wt Soldering Temperature Approximate Weight Case Style Device Marking DC operation TO-220AC 10ETS12 * When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W For recommended footprint and soldering techniques refer to application note #AN-994 2 www.irf.com 10ETS12PbF SAFEIR Series Bulletin I2191 12/04 Maximum Allowable Case T emperature (°C) 10ET .. S S eries R thJC (DC) = 2.5 °C/ W Maximum Allowable Case T emperature (°C) 150 140 130 150 140 130 10ET .. S S eries R thJC (DC) = 2.5 °C/ W Conduction Angle 120 110 100 90 80 30° 60° 90° 120° 8 10 Conduction Period 120 110 100 90 30° 60° 90° 120° 10 180° 12 14 DC 16 18 180° 12 0 2 4 6 0 2 4 6 8 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Maximum Average Forward Power Loss (W) 16 14 12 10 R Limit MS 8 6 4 2 0 0 2 4 6 8 10 Average Forward Current (A) Conduction Angle Fig. 2 - Current Rating Characteristics 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 R Limit MS Conduction Period 180° 120° 90° 60° 30° Maximum Average Forward Power Los (W) s DC 180° 120° 90° 60° 30° 10ET .. S S eries TJ = 150°C 10ET .. S S eries TJ = 150°C 10 12 14 16 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Peak Half S ine Wave Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 240 220 Maximum Non R epetitive S urge Current Versus Pulse T rain Duration. Initial TJ = 150 °C 200 No Voltage Reap plied R ated VRRM Reapplied 180 Peak Half S ine Wave Forward Current (A) 200 180 160 140 120 100 80 60 40 1 At Any Ra ted Load Condition And With Rated V RRM Ap plied Following S urge. Initial TJ = 150°C @60 Hz 0.0083 s @50 Hz 0.0100 s 160 140 120 100 80 60 40 0.01 10ET .. S S eries 10ET .. S S eries 10 100 0.1 Pulse T rain Duration (s) 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 3 10ETS12PbF SAFEIR Series Bulletin I2191 12/04 100 Instantaneous F orward Current (A) TJ= 25°C TJ= 150°C 10 10ET .. S S eries 1 0 0.5 1 1.5 2 2.5 3 Instantaneous Forward Voltage (V) Fig. 8 - Forward Voltage Drop Characteristics T rans ient T rmal Impeda nc e Z thJC (°C/ W) he 10 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 S teady S tate Value (DC Operation) 1 S ingle Pulse 10ET .. S S eries 0.1 0.0001 0.001 0.01 0.1 1 10 S quare Wave Pulse Duration (s ) Fig. 9 - Thermal Impedance ZthJC Characteristics 4 www.irf.com 10ETS12PbF SAFEIR Series Bulletin I2191 12/04 Outline Table 10.54 (0.41) MAX. 2 3.78 (0.15) 3.54 (0.14) 2.92 (0.11) 2.54 (0.10) TERM 2 1.32 (0.05) DIA. 6.48 (0.25) 6.23 (0.24) 2° 1.22 (0.05) 15.24 (0.60) 14.84 (0.58) 1 14.09 (0.55) 13.47 (0.53) 3 Base Cathode 2 3.96 (0.16) 3.55 (0.14) 2.04 (0.080) MAX. 0.10 (0.004) 1 3 1.40 (0.05) 1.15 (0.04) 0.94 (0.04) 0.69 (0.03) 2.89 (0.11) 2.64 (0.10) Cathode Anode 1 4.57 (0.18) 4.32 (0.17) 3 0.61 (0.02) MAX. 5.08 (0.20) REF. TO-220AC Dimensions in millimeters (inches) Part Marking Information IRMX Assembly Line EXAMPLE: THIS IS A 10ETS12 LOT CODE 1789 ASSEMBLED ON WW 19, 2001 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO PART NUMBER DATE CODE ASSEMBLY LOT CODE YEAR 1 = 2001 WEEK 19 P = LEAD-FREE www.irf.com 5 10ETS12PbF SAFEIR Series Bulletin I2191 12/04 Ordering Information Table Device Code 10 1 E 2 T 3 S 4 12 5 PbF 6 1 2 3 4 5 6 - Current Rating (10 = 10A) Circuit Configuration E = Single Diode Package T = TO-220AC Type of Silicon S = Standard Recovery Rectifier Voltage Rating (12 = 1200V) none = Standard Production PbF = Lead-Free Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/05 6 www.irf.com
10ETS12
1. 物料型号: - 型号:10ETS12PbF - 特点:无铅(后缀"PbF"表示无铅)

2. 器件简介: - 10ETS12PbF整流器属于SAFEIR系列,优化了极低的正向电压降,并具有适度的漏电流。使用的玻璃钝化技术可在高达150°C的结温下可靠运行。典型应用为输入整流,这些产品旨在与相同封装轮廓的国际整流器开关和输出整流器一起使用。

3. 引脚分配: - 封装:TO-220AC - 引脚信息未明确提供,但TO-220AC通常有3个引脚,分别为阴极(Cathode)、阳极(Anode)和门极(Gate)。

4. 参数特性: - 平均正向电流(F(AV)):10A - 最大反向峰值电压(VRRM):1200V - 单周期非重复峰值电流(FSM):200A - 25°C时10A下的正向电压降(VF @10A,T =25°C):1.1V - 工作结温范围(TJ):-40至150°C

5. 功能详解应用信息: - 该器件主要用于输入整流,适用于单相桥和三相桥整流应用。 - 在电容输入、环境温度55°C、1°C/W共同散热器条件下,单相桥和三相桥整流的典型应用电流分别为12.0A和16.0A。

6. 封装信息: - 封装类型:TO-220AC - 设备标记:10ETS12 - 封装材料:当安装在1平方英寸(650mm²)的FR-4或G-10材料PCB上,4盎司(140µm)铜时,最大热阻从结到环境(PCB安装)为62°C/W。
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