10MQ100

Bulletin PD-20520 rev. M 07/04 10MQ100N SCHOTTKY RECTIFIER 2.1 Amp IF(AV) = 2.1Amp VR = 100V Major Ratings and Characteristics Characteristics IF VRRM IFSM @ tp = 5 µs sine VF TJ @ 1.5Apk, TJ=125°C range DC Description/ Features The 10MQ100N surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Small foot print, surface mountable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability 10MQ100N Units 2.1 100 120 0.68 - 55 to 150 A V A V °C Case Styles 10MQ100N SMA www.irf.com 1 10MQ100N Bulletin PD-20520 rev. M 07/04 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 10MQ100N 100 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current * See Fig. 4 IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 6, TJ = 25°C Non-Repetitive Avalanche Energy Repetitive Avalanche Current 10MQ 1.5 120 30 1.0 0.5 Units A Conditions 50% duty cycle @ TL = 126 °C, rectangular wave form. On PC board 9mm2 island (.013mm thick copper pad area) 5µs Sine or 3µs Rect. pulse 10ms Sine or 6ms Rect. pulse TJ = 25 °C, IAS = 0.5A, L = 8mH Following any rated load condition and with rated VRRM applied A mJ A Electrical Specifications Parameters VFM Max. Forward Voltage Drop * See Fig. 1 (1) 10MQ 0.78 0.85 0.63 0.68 Units V V V V mA mA V mΩ pF nH V/µs @ 1A @ 1.5A @ 1A @ 1.5A TJ = 25 °C TJ = 125 °C TJ = TJ max. Conditions TJ = 25 °C TJ = 125 °C VR = rated VR IRM Max. Reverse Leakage Current (1) * See Fig. 2 0.1 1 0.52 78.4 38 2.0 10000 VF(TO) Threshold Voltage rt CT LS Forward Slope Resistance Typical Junction Capacitance Typical Series Inductance (Rated VR) (1) Pulse Width < 300µs, Duty Cycle < 2% VR = 10VDC, TJ = 25°C, test signal = 1Mhz Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change Thermal-Mechanical Specifications Parameters TJ Tstg Max. Storage Temperature Range 10MQ - 55 to 150 80 Units °C °C °C/W DC operation Conditions Max. Junction Temperature Range (*) - 55 to 150 RthJA Max. Thermal Resistance Junction to Ambient wt Approximate Weight Case Style Device Marking (*) dPtot dTj < 1 Rth( j-a) 0.07(0.002) g (oz.) SMA IR1J Similar D-64 thermal runaway condition for a diode on its own heatsink 2 www.irf.com 10MQ100N Bulletin PD-20520 rev. M 07/04 1 10 TJ = 150°C 125°C 100°C R everse Current - I (mA) 0.1 R 0.01 75°C 50°C 25°C 0.001 0.0001 Instantaneous F orward Current - I F (A) 0 TJ= 150°C TJ= 125°C 1 TJ= 25°C 0 20 40 60 80 100 Reverse Voltage - V R (V) Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage 100 Junction Capacitance - C T (pF ) TJ= 25°C 10 0.1 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage Drop - VFM (V) 1 Fig. 1 - Maximum Forward Voltage Drop Characteristics 0 20 40 60 80 100 Reverse Voltage - V R(V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage www.irf.com 3 10MQ100N Bulletin PD-20520 rev. M 07/04 150 Allowable Case T emperature - (°C) 1.6 1.4 Average Power Loss - (Watts) 1.2 1 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 2 2.4 RMSLimit DC D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 140 130 120 110 100 90 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC S quare wave (D = 0.50) 80% Rated VR applied se e note (2) 0 0.4 0.8 1.2 1.6 2 2.4 Average Forward Current - I F(AV) (A) Average Forward Current - I F(AV) (A) Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current Non - Repetitive Surge Current - I FSM (A) 100 Tj = 25˚C At Any Rated Load Condition And With Rated Vrrm Applied Following Surge 10 10 100 1000 10000 Square Wave Pulse Duration - t p ( microsec) Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 10MQ100N Bulletin PD-20520 rev. M 07/04 Outline Table Device Marking: IR1J CATHODE AN OD E 1.40 (.055) 1.60 (.062) 2.50 (.098) 2.90 (.114) 1 2 4.00 (.157) 4.60 (.181) .152 (.006) .305 (.012) 2.00 (.078) 2.44 (.096) 0.76 (.030) 1.52 (.060) .103 (.004) .203 (.008) 4.80 (.188) 5.28 (.208) 1 P O LA R I TY 2 PA R T N U M B ER 1.47 MIN. (.058 MIN.) 2.10 MAX. (.085 MAX. ) 1.27 MIN. (.050 MIN.) 5.53 (.218) SOLDERING PAD Outline SMA Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994 Marking & Identification Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID. IR1J VOLTAGE CURRENT IR LOGO YYWWX SITE ID WEEK 2nd digit of the YEAR "Y" = 1st digit of the YEAR "standard product" "P" = "Lead-Free" www.irf.com 5 10MQ100N Bulletin PD-20520 rev. M 07/04 Tape & Reel Information Dimensions in millimetres and (inches) Ordering Information Table Device Code 10 1 1 2 3 4 5 6 7 M 2 - Q 3 100 4 N 5 TR 6 7 Current Rating M = SMA Q = Schottky Q Series Voltage Rating (100 = 100V) N = New SMA none = Box (1000 pieces) TR = Tape & Reel (7500 pieces) none = Standard Production PbF = Lead-Free Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 0 7 /04 6 www.irf.com