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12TTS08

12TTS08

  • 厂商:

    IRF

  • 封装:

  • 描述:

    12TTS08 - PHASE CONTROL SCR - International Rectifier

  • 数据手册
  • 价格&库存
12TTS08 数据手册
Preliminary Data Sheet I2144 11/97 SAFEIR Series 12TTS08 PHASE CONTROL SCR VT Description/Features The 12TTS08 SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature. Typical applications are in input rectification and crow-bar (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. < 1.2V @ 8A ITSM = 140A VRRM = 800V Output Current in Typical Applications Applications Capacitive input filter TA = 55°C, TJ = 125°C, common heatsink of 1°C/W Single-phase Bridge 13.5 Three-phase Bridge Units 17 A Major Ratings and Characteristics Characteristics IT(AV) Sinusoidal waveform IT(RMS) VRRM/VDRM ITSM VT dv/dt di/dt TJ range @ 8 A, TJ = 25°C 12.5 800 140 1.2 150 100 - 40 to 125 A V A V V/µs A/µs °C Package Outline Units A 12TTS08 8 TO-220AC Also available in SMD-220 package (series 12TTS..S) 1 12TTS08 SAFEIR Series Preliminary Data Sheet I2144 11/97 Voltage Ratings Part Number 12TTS08 VRRM, maximum peak reverse voltage V 800 VDRM , maximum peak direct voltage V 800 IRRM/IDRM 125°C mA 1.0 Absolute Maximum Ratings Parameters IT(AV) Max. Average On-state Current IT(RMS) Max. RMS On-state Current ITSM Max. Peak One Cycle Non-Repetitive Surge Current It 2 12TTS08 8 12.5 120 140 72 100 Units A Conditions @ TC = 108° C, 180° conduction half sine wave A 10ms Sine pulse, rated VRRMapplied,TJ = 125°C 10ms Sine pulse, no voltage reapplied, TJ = 125°C Max. I t for fusing 2 As 2 10ms Sine pulse, rated VRRMapplied,TJ = 125°C 10ms Sine pulse, no voltage reapplied, T J = 125°C I √t 2 Max. I √t for fusing 2 1000 1.2 16.2 0.87 0.05 1.0 30 50 150 100 A √s 2 t = 0.1 to 10ms, no voltage reapplied,TJ = 125°C @ 8A, TJ = 25°C TJ = 125°C VTM rt Max. On-state Voltage Drop On-state slope resistance V mΩ V mA VT(TO) Threshold Voltage IRM/IDM Max.Reverse and Direct Leakage Current IH IL Typ. Holding Current Max. Latching Current TJ = 25 °C TJ = 125 °C VR = rated VRRM/ VDRM mA mA V/µs A/µs Anode Supply = 6V, Resistive load, Initial IT =1A Anode Supply = 6V, Resistive load TJ = 25°C dv/dt Max. rate of rise of off-state Voltage di/dt Max. rate of rise of turned-on Current 2 12TTS08 SAFEIR Series Preliminary Data Sheet I2144 11/97 Triggering Parameters PGM Max. peak Gate Power 12TTS08 8.0 2.0 1.5 10 20 15 10 Units W Conditions PG(AV) Max. average Gate Power + IGM Max. paek positive Gate Current - VGM Max. paek negative Gate Voltage IGT Max. required DC Gate Current to trigger A V mA Anode supply = 6V, resistive load, TJ = - 65°C Anode supply = 6V, resistive load, TJ = 25°C Anode supply = 6V, resistive load, TJ = 125°C V Anode supply = 6V, resistive load, TJ = - 65°C Anode supply = 6V, resistive load, TJ = 25°C Anode supply = 6V, resistive load, TJ = 125°C TJ = 125°C, VDRM = rated value mA TJ = 125°C, VDRM = rated value VGT Max. required DC Gate Voltage to trigger 1.2 1 0.7 VGD IGD Max. DC Gate Voltage not to trigger Max. DC Gate Current not to trigger 0.2 0.1 Switching Parameters tgt trr tq Typical turn-on time Typical reverse recovery time Typical turn-off time 12TTS08 0.8 3 100 Units µs TJ = 25°C TJ = 125°C Conditions Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range to Case RthJA Max. Thermal Resistance Junction to Ambient RthCS Typ. Thermal Resistance Case to Heatsink wt T Approximate Weight Mounting Torque Min. Max. Case Style 0.5 2 (0.07) 6 (5) 12 (10) g (oz.) Kg-cm (Ibf-in) Mountingsurface,smoothandgreased 62 12TTS08 - 40 to 125 - 40 to 125 1.5 Units °C Conditions RthJC Max. Thermal Resistance Junction °C/W DCoperation TO-220AC 3 12TTS08 SAFEIR Series Preliminary Data Sheet I2144 11/97 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 125 12TTS08 R thJ C (DC) = 1.5 K/W 120 125 12TTS08 R thJC(DC) = 1.5 K/W 120 115 Conduction Angle 115 Conduction Period 110 30° 105 60° 90° 120° 180° 100 0 2 4 6 8 10 Average On-state Current (A) 110 30° 60° 90° 120° 180° DC 12 14 105 100 0 2 4 6 8 10 Average On-state Current (A) Fig. 1 - Current Rating Characteristics Maximum Average On-state Power Loss (W) Fig. 2 - Current Rating Characteristics Maximum Average On-state Power Loss (W) 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 Average On-state Current (A) DC 180° 120° 90° 60° 30° RMS Limit Conduction Period 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 Average On-state Current (A) Conduction Angle 180° 120° 90° 60° 30° RMS Limit 12TTS08 T J= 125°C 12TTS08 T J = 125°C Fig. 3 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 150 140 130 120 110 100 90 80 70 60 50 0.01 12TTS08 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125 °C No Voltage Reapplied Rated VRRMReapplied 130 120 110 100 90 80 70 60 1 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 12TTS08 10 100 0.1 Pulse Train Duration (s) 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current 4 12TTS08 SAFEIR Series Preliminary Data Sheet I2144 11/97 1000 Instantaneous On-state Current (A) 12TTS08 100 10 T J= 25°C T J= 125°C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics Transient Thermal Impedance Z thJC (°C/W) 10 Steady State Value (DC Operation) 1 D D D D = 0.50 = 0.33 = 0.25 = 0.17 0.1 D = 0.08 Single Pulse 12TTS08 0.01 0.0001 0.001 0.01 Square Wave Pulse Duration (s) 0.1 1 Fig. 8 - Thermal Impedance ZthJC Characteristics 5 12TTS08 SAFEIR Series Preliminary Data Sheet I2144 11/97 Outline Table 10.54 (0.41) 2 1.32 (0.05) 3.78 (0.15) DIA. 3.54 (0.14) 2.92 (0.11) 2.54 (0.10) TERM 2 6.48 (0.25) 6.23 (0.24) 1.22 (0.05) MAX. 15.24 (0.60) 14.84 (0.58) 123 2° 14.09 (0.55) 13.47 (0.53) 3.96 (0.16) 3.55 (0.14) 2.04 (0.080) MAX. 0.10 (0.004) 1.40 (0.05) 1.15 (0.04) 0.94 (0.04) 0.69 (0.03) 2.89 (0.11) 2.84 (0.10) 123 4.57 (0.18) 4.32 (0.17) 0.61 (0.02) MAX. Dimensions in millimeters (and inches) 5.08 (0.20) REF. Ordering Information Table Device Code 12 1 1 2 3 4 5 Current Rating Circuit Configuration: T = Single Thyristor Package: T = TO-220AC Type of Silicon: S = Converter Grade T 2 T 3 S 4 08 2 (A) 5 1 (K) (G) 3 Voltage code: Code x 100 = VRRM 6 12TTS08 SAFEIR Series Preliminary Data Sheet I2144 11/97 WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: 233 Kansas St., El Segundo, California 90245 U.S.A Tel: (310) 322-3331 Fax: (310) 322-3332 Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020 Fax: ++ 44 1883 733408 7231 Victoria Park Ave., Suite #201, Markham, Ontario L3R 2Z8 Tel: (905) 475 1897. Fax: (905) 475 8801 Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 Fax: ++ 49 6172 965933 Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 4510111 Fax: ++ 39 11 4510220 K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086 Fax: 81 3 3983 0642 315 Outram Road, # 10-02 Tan Boon Liat Building, SINGAPORE 0316. Tel: 65 221 8371. Fax: 65 221 8372. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice 11/97 7
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