150EBU02

Bulletin PD-20741 rev. A 01/01 150EBU02 Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature Benefits • Reduced RFI and EMI • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count trr = 45ns IF(AV) = 150Amp VR = 200V Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. Absolute Maximum Ratings Parameters VR IF(AV) IFSM IFRM ! TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, TC = 116°C Single Pulse Forward Current, TC = 25°C Maximum Repetitive Forward Current Operating Junction and Storage Temperatures Max 200 150 1600 380 - 55 to 175 Units V A °C !" Square Wave, 20kHz Case Styles PowIRtab 1 150EBU02 Final PD-20741 rev. A 01/01 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage Min Typ Max Units Test Conditions 200 V V V µA mA pF nH IR = 100µA IF = 150A IF = 150A, TJ = 175°C VR = VR Rated TJ = 150°C, VR = VR Rated VR = 200V Measured lead to lead 5mm from package body 0.99 1.13 0.79 0.90 180 3.5 50 2 - IR Reverse Leakage Current - CT LS Junction Capacitance Series Inductance - Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameters t rr Reverse Recovery Time Min Typ Max Units Test Conditions - 34 58 4.5 9.0 87 300 45 - ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C IF = 150A VR = 160V diF /dt = 200A/µs IRRM Peak Recovery Current - A TJ = 25°C TJ = 125°C Qrr Reverse Recovery Charge - nC TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameters RthJC RthCS # Wt Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Weight 0.18 T Mounting Torque 1.2 10 #" Mounting Surface, Flat, Smooth and Greased Min Typ 0.2 Max 0.35 Units K/W 5.02 g (oz) 2.4 20 N*m lbf.in 2 150EBU02 Bulletin PD-20741 rev. A 01/01 1000 Reverse Current - I R (µA) 1000 100 10 1 0.1 0.01 25˚C T J = 175˚C 125˚C Instantaneous Forward Current - I F (A) 100 T = 175˚C J J J 0.001 0 50 100 150 200 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage T = 125˚C T = 25˚C 10000 10 Junction Capacitance - C T (pF) T J = 25˚C 1000 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 100 1 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 1 Thermal Impedance Z thJC (°C/W) 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) Notes: PDM t1 t2 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics 3 150EBU02 Final PD-20741 rev. A 01/01 180 Allowable Case Temperature (°C) 250 Average Power Loss ( Watts ) 160 140 120 100 Square wave (D = 0.50) 80% Rated Vr applied 200 150 100 50 0 RMS Limit DC 80 see note (3) D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 60 0 50 100 150 200 250 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current 0 50 100 150 200 250 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics 70 IF = 150A IF = 75A 900 800 700 Vr = 160V Tj = 125˚C Tj = 25˚C 60 50 Qrr ( nC ) trr ( ns ) 600 500 400 300 200 IF = 150A IF = 75A 40 30 20 Vr = 160V Tj = 125˚C Tj = 25˚C 100 1000 10 100 di F /dt (A/µs ) 0 100 di F /dt (A/µs ) 1000 Fig. 7 - Typical Reverse Recovery time vs. di F /dt Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 150EBU02 Bulletin PD-20741 rev. A 01/01 Reverse Recovery Circuit VR = 200V 0.01 Ω L = 70µH D.U.T. di F /dt dif/dt ADJUST D G IRFP250 S Fig. 9- Reverse Recovery Parameter Test Circuit 3 IF 0 trr ta tb 4 2 Q rr I RRM 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 1 di fF/dt /dt 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions 5 150EBU02 Final PD-20741 rev. A 01/01 Outline Table Dimensions in millimeters and (inches) Ordering Information Table Device Code 150 1 1 2 3 4 5 - E 2 B 3 U 4 02 5 (150 = 150A) (Ultrafast/Hyperfast only) (02 = 200V) Current Rating Single Diode PowIRtab Ultrafast Recovery Voltage Rating IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/01 6