150EBU04

Bulletin PD-20744 rev. A 01/01 150EBU04 Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature Benefits • Reduced RFI and EMI • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count trr = 60ns IF(AV) = 150Amp VR = 400V Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. Absolute Maximum Ratings Parameters VR IF(AV) IFSM IFRM ! TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, TC = 104°C Single Pulse Forward Current, TC = 25°C Maximum Repetitive Forward Current Operating Junction and Storage Temperatures Max 400 150 1500 300 - 55 to 175 Units V A °C !" Square Wave, 20kHz Case Styles PowIRtab 1 150EBU04 Bulletin PD-20744 rev. A 01/01 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage Min Typ Max Units Test Conditions 400 1.07 0.9 1.3 1.1 V V V V µA mA pF nH IR = 200µA IF = 150A IF = 150A, TJ = 175°C IF = 150A, TJ = 125°C VR = VR Rated TJ = 150°C, VR = VR Rated VR = 400V Measured lead to lead 5mm from package body 0.96 1.17 100 3.5 50 4 - IR Reverse Leakage Current - CT LS Junction Capacitance Series Inductance - Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameters t rr Reverse Recovery Time Min Typ Max Units Test Conditions - 93 172 11 20 490 1740 60 - ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C IF = 150A VR = 200V diF /dt = 200A/µs IRRM Peak Recovery Current - A TJ = 25°C TJ = 125°C Qrr Reverse Recovery Charge - nC TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameters RthJC RthCS # Wt Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Weight 0.18 T Mounting Torque 1.2 10 #" Mounting Surface, Flat, Smooth and Greased Min Typ 0.2 Max 0.35 Units K/W 5.02 g (oz) 2.4 20 N*m lbf.in 2 150EBU04 Bulletin PD-20744 rev. A 01/01 1000 Reverse Current - I R (µA) 1000 100 10 1 0.1 0.01 25˚C T J = 175˚C 125˚C Instantaneous Forward Current - I F (A) 100 T = 175˚C J T = 125˚C J T = 25˚C J 0.001 0 100 200 300 400 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 10000 10 Junction Capacitance - C T (pF) T J = 25˚C 1000 100 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 10 10 100 1000 Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 1 Thermal Impedance Z thJC (°C/W) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM 0.1 Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = t1/ t 2 t1 t2 2. Peak Tj = Pdm x ZthJC + Tc .01 0.00001 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics 3 150EBU04 Bulletin PD-20744 rev. A 01/01 80 Allowable Case Temperature (°C) 300 Average Power Loss ( Watts ) 60 40 DC 250 200 150 100 50 0 0 50 100 150 RMS Limit 20 00 Square wave (D = 0.50) 80 Rated Vr applied 60 see note (3) 40 0 50 100 150 200 250 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current D = 0.01 D = 0.02 D = 0.05 D = 0.10 DDC0.20 = D = 0.50 DC 200 250 Average Forward Current - IF(AV)(A) Fig. 6 - Forward Power Loss Characteristics 250 Vr = 200V Tj = 125˚C Tj = 25˚C 5000 IF = 150A IF = 75A 4500 4000 Vr = 200V Tj = 125˚C Tj = 25˚C 200 3500 Qrr ( nC ) trr ( ns ) 3000 2500 2000 1500 IF = 150A IF = 75A 150 100 1000 500 50 100 di F /dt (A/µs ) 1000 0 100 di F /dt (A/µs ) 1000 Fig. 7 - Typical Reverse Recovery time vs. di F /dt Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR 4 150EBU04 Bulletin PD-20744 rev. A 01/01 Reverse Recovery Circuit VR = 200V 0.01 Ω L = 70µH D.U.T. di F / dif/dtdt ADJUST D G IRFP250 S Fig. 9- Reverse Recovery Parameter Test Circuit 3 IF 0 trr ta tb 4 2 Q rr I RRM 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 1 /dt di fF/dt 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions 5 150EBU04 Bulletin PD-20744 rev. A 01/01 Outline Table Dimensions in millimeters and (inches) Ordering Information Table Device Code 150 1 1 2 3 4 5 - E 2 B 3 U 4 04 5 (150 = 150A) (Ultrafast/ Hyperfast only) (04 = 400V) Current Rating Single Diode PowIRtab Ultrafast Recovery Voltage Rating IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/01 6