175BGQ030J

Bulletin PD-20997 rev. E 12/02 175BGQ030 175BGQ030J SCHOTTKY RECTIFIER 175 Amp Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform @ TC IDC VRRM IFSM @ tp = 5 µs sine VF @175 Apk typical @TJ TJ range Maximum 175BGQ030 175 115 248 30 8000 0.45 150 - 55 to 150 Description/ Features Units A °C A V A V °C °C The 175BGQ030 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in high current AC/DC power supplies. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. 150°C TJ operation High Frequency Operation Ultra low forward voltage drop Continuous High Current operation Guard ring for enhanced ruggedness and long term reliability PowIRtabTM package Case Styles 175BGQ030 175BGQ030J www.irf.com 1 175BGQ030, 175BGQ030J Bulletin PD-20997 rev. E 12/02 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) 30 VRWM Max. Working Peak Reverse Voltage (V) 175BGQ030 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IF(RMS) RMS Forward Current IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current Non-RepetitiveAvalancheEnergy Repetitive Avalanche Current 175BGQ Units 175 248 8000 1500 80 12 A mJ A A A TC = 114°C Conditions 50% duty cycle @ TC = 115°C, rectangular wave form 5µs Sine or 3µs Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 12 Amps, L = 1.12 mH Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM Forward Voltage Drop (1) (2) 175BGQ Units Typ. Max. Conditions @ 100A @ 175A @ 100A @ 175A TJ = 25 °C TJ = 125°C TJ = 125 °C TJ = 150 °C TJ = TJ max. VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C Measured from tab to mounting plane TJ = 25 °C TJ = 150 °C VR = rated VR VR = 15V VR = 30V 0.46 0.48 0.53 0.56 0.35 0.38 0.45 0.49 V V V V mA mA mA mA V mΩ pF nH V/ µs IRM Reverse Leakage Current (1) 1.3 4.5 450 650 160 220 1400 2000 VF(TO) Threshold Voltage rt CT LS Forward Slope Resistance Max. Junction Capacitance Typical Series Inductance (Rated VR) 0.242 1.4 8500 3.5 10000 dv/dt Max. Voltage Rate of Change Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range (1) Pulse Width < 300µs, Duty Cycle < 2% (2) VFM = VF(TO) + rt x IF 175BGQ Units -55 to 150 -55 to 150 0.25 0.20 5 (0.18) Min. Max. 1.2 (10) 2.4 (20) °C °C °C/W °C/W g (oz.) N*m (Ibf-in) DCoperation Conditions RthJC Max. Thermal Resistance Junction to Case RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Case Style Mounting surface , smooth and greased PowIRtabTM 2 www.irf.com 175BGQ030, 175BGQ030J Bulletin PD-20997 rev. E 12/02 1000 10000 1000 100 10 1 0.1 T J = 150°C T J = 125°C T J = 25°C 10000 Junction Capacitance - C T (pF) 0.01 TJ = 150°C 125°C 100°C 75°C 50°C 25°C Instantaneous Forward Current - I F (A) 100 Reverse Current - I R (mA) 0 5 10 15 20 25 30 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage 10 T J = 25°C 1 0 0.2 0.4 0.6 0.8 1 1.2 1000 0 5 10 15 20 25 30 35 Forward Voltage Drop - V FM (V) Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 1 Thermal Impedance Z thJC (°C/W) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 0.1 D= D= D= D= D= 0.75 0.50 0.33 0.25 0.20 Single Pulse (Thermal Resistance) PDM Notes: t1 t2 1. Duty factor D = t 1/ t 2 2. Peak TJ = PDM x Z thJC+ T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics www.irf.com 3 175BGQ030, 175BGQ030J Bulletin PD-20997 rev. E 12/02 150 Allowable Case Temperature - (°C) Average Power Loss - (Watts) 140 DC 130 120 110 Square wave (D = 0.50) 80% Rated VR applied 100 90 see note (2) 180 160 140 120 100 80 60 40 20 120 160 200 240 280 0 0 50 100 150 200 250 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMS Limit DC 80 0 40 80 Average Forward Current - I F(AV) (A) Average Forward Current - I F(AV) (A) Fig. 5 - Maximum Allowable Case Temperature Vs. Average Forward Current (A) 10000 Fig. 6 - Forward Power Loss Characteristics Non-Repetitive Surge Current - I At Any Rated Load Condition And With Rated VRRM Applied Following Surge FSM 1000 10 100 1000 10000 Square Wave Pulse Duration - t p (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L HIGH-SPEED SWITCH FREE-WHEEL DIODE 40HFL40S02 + DUT IRFP460 Rg = 25 ohm Vd = 25 Volt CURRENT MONITOR Fig. 8 - Unclamped Inductive Test Circuit (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 175BGQ030, 175BGQ030J Bulletin PD-20997 rev. E 12/02 Outline Table Case Style PowIRtabTM Dimensions in millimeters and (inches) Case Style PowIRtabTM "J" version Dimensions in millimeters and (inches) www.irf.com 5 175BGQ030, 175BGQ030J Bulletin PD-20997 rev. E 12/02 Ordering Information Table Device Code 175 BGQ 030 1 1 2 3 4 6 2 3 J 4 Current Rating Essential Part Number Voltage code: Code = VRRM none = PowIRtabTM standard J = Short Lead Version *************************************************** This model has been developed by Wizard SPICE MODEL GENERATOR (1999) ( International Rectifier Corporation ) contains Proprietary Information *************************************************** SPICE Model Diode is composed by a simple diode plus paralled VCG2T *************************************************** This model .SUBCKT 175bgq30 ANO CAT D1 ANO 1 DMOD (0.24359) *Define diode model . MODEL DMOD D ( IS=1.3875007809205E-04A, N=1.00125798542747, BV=30V, + IBV=0.160931851779476A,RS= 0.0001656412,CJO=5.05942026644635E-08, +VJ=1.99501834690192,XTI=2,EG=0.711439066978857) ***************************************************** * Implementation of VCG2T VX 1 2 DC 0V R1 2 CAT TRES 1E-6 .MODEL TRES RES (R=1, TC1=4.01799427965033) GP1 ANO CAT VALUE= {-ABS (I(VX)) *(EXP((((-3.827089E-03/ 4.017994)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-1))+1)*0.122401*ABS(V(ANO,CAT)))-1)} ***************************************************** .ENDS 175bgq30 Thermal Model Subcircuit .SUBCKT 175bgq30T 5 1 CTHERM1 CTHERM2 CTHERM3 CTHERM4 RTHERM1 RTHERM2 RTHERM3 RTHERM4 5 4 3 2 5 4 3 2 4 3 2 1 4 3 2 1 1.30E+3 2.87E+2 1.56E+4 2.37E+5 3.13E-2 1.42E-1 6.70E-2 1.72E-4 .ENDS 175bgq30T 6 www.irf.com 175BGQ030, 175BGQ030J Bulletin PD-20997 rev. E 12/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/02 www.irf.com 7