175BGQ045

PD-20710 rev. C 11/99 175BGQ045 175BGQ045J SCHOTTKY RECTIFIER 175 Amp Major Ratings and Characteristics Characteristics I F(AV) Rectangular waveform @ TC I DC VRRM IFSM @ tp = 5 µs sine VF @175 Apk typical @ TJ TJ range Maximum 175BGQ045 175 107 248 45 8700 0.61 150 - 55 to 150 Description/Features Units A °C A V A V °C °C The NEW 175BGQ045 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in high current AC/DC power supplies. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. 150°C TJ operation High Frequency Operation Ultra low forward voltage drop Continuous High Current operation Guard ring for enhanced ruggedness and long term reliability PowIRtabTM package Case Styles 175BGQ045 175BGQ045J www.irf.com 1 175BGQ045, 175BGQ045J PD-20710 rev. C 11/99 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) 45 VRWM Max. Working Peak Reverse Voltage (V) 175BGQ045 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IF(RMS) RMS Forward Current IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current Non-RepetitiveAvalancheEnergy Repetitive Avalanche Current 175BGQ Units 175 248 8700 1550 40 6 A mJ A A A T C = 104°C Conditions 50% duty cycle @ TC = 107°C, rectangular wave form 5µs Sine or 3µs Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 6 Amps, L = 2.0 mH Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. V A = 1.5 x VR typical Electrical Specifications Parameters VFM Forward Voltage Drop (1) (2) 175BGQ Units Typ. Max. Conditions @ 100A @ 175A @ 100A @ 175A TJ = 25 °C TJ = 125°C TJ = 150 °C TJ = TJ max. VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C Measured from tab to mounting plane VR = 45V TJ = 25 °C TJ = 150 °C VR = rated VR 0.53 0.56 0.64 0.69 0.48 0.52 0.61 0.64 V V V V mA mA mA V mΩ pF nH V/ µs IRM Reverse Leakage Current (1) 0.6 360 2 640 1200 2000 VF(TO) Threshold Voltage rt CT LS Forward Slope Resistance Max. Junction Capacitance Typical Series Inductance (Rated V R) 0.352 1.5 5600 3.5 10,000 dv/dt Max. Voltage Rate of Change Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range (1) Pulse Width < 300µs, Duty Cycle < 2% (2) VFM = VF(TO) + rt x IF 175BGQ Units -55 to 150 -55 to 150 0.25 0.20 5 (0.18) Min. Max. 1.2 (10) 2.4 (20) °C °C °C/W °C/W g (oz.) N*m (Ibf-in) DCoperation Conditions RthJC Max. Thermal Resistance Junction to Case RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Case Style Mounting surface , smooth and greased PowIRtabTM 2 www.irf.com 175BGQ045, 175BGQ045J PD-20710 rev. C 11/99 1000 T J = 150°C T J = 125°C T J = 25°C R e v e rse C u rre n t - I R (m A ) 10 0 0 1 00 10 1 0 .1 0 .0 1 0 5 10 15 20 25 30 35 40 45 R e v e rse V o lt a g e - V R (V ) T J = 1 5 0 °C 1 2 5 °C 1 0 0 °C 7 5 °C 5 0 °C 2 5 °C 1 00 00 In stant aneous Forw ard Curren t - I F ( A) 100 Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage 10 0 00 (p F) 10 1 0 0.2 0.4 0. 6 0. 8 1 1.2 1.4 F orw ard Voltage Drop - V FM (V) Ju n c t io n C a p a c it a n c e - C T J = 2 5 °C T 1 00 0 0 10 20 30 40 50 R e v e rse V o lt a g e - VR (V ) Fig. 1 - Maximum Forward Voltage Drop Characteristics 1 Thermal Impedance Z thJC (°C/W ) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 0 .1 D D D D D = = = = = 0 .7 5 0 .5 0 0 .3 3 0 .2 5 0 .2 0 Sin gle P u ls e (Ther m a l R esista n ce) P DM Notes: t1 t2 1 . Duty factor D = t 1/ t 2 2 . Peak TJ = PD M x Z th JC+ T C 0 .0 1 0. 00 0 01 0. 00 0 1 0 .0 01 0 .0 1 0.1 1 10 t 1 , R ecta n gu lar Pu lse D u ra tio n (S econ d s) Fig. 4 - Maximum Thermal Impedance Z thJC Characteristics www.irf.com 3 175BGQ045, 175BGQ045J PD-20710 rev. C 11/99 150 A llo w a b le C a se T e m p e ra tu r e - ( °C ) 140 130 120 110 100 90 80 70 60 50 0 50 1 00 15 0 200 250 3 00 A v e ra g e Fo rw a rd C u rr e n t - I F(A V) (A ) s e e no te (3 ) Squ are wav e (D = 0.5 0 ) 80 % Ra ted V R a pp lie d 20 0 17 5 A v e ra g e P o w e r L o ss - (W a t t s) DC 15 0 12 5 R M S Lim it 10 0 75 50 25 0 0 50 100 15 0 200 25 0 A v e ra g e Fo rw a rd C u rre n t - I F(A V) (A ) DC D D D D D = = = = = 0 .2 0 0 .2 5 0 .3 3 0 .5 0 0 .7 5 Fig. 5 - Maximum Allowable Case Temperature Vs. Average Forward Current 1 0 0 00 FSM Fig. 6 - Forward Power Loss Characteristics N o n - Re p e t it iv e Su rg e C u rre n t - I (A) A t A n y R a t e d L o a d C o n d it io n A n d W it h R a te d V A p p lie d RRM F o llo w in g S u rg e 1 0 00 10 10 0 1 00 0 10 0 00 Sq u a r e W a v e Pu lse D u ra t io n - t p ( m ic ro se c ) Fig. 7 - Maximum Non-Repetitive Surge Current L H IG H - SP E E D SW IT C H FR E E - W H E E L D IO D E 40 HFL4 0 S02 V d = 2 5 V o lt D UT IRFP4 60 Rg = 25 ohm + C UR R E N T M O N IT O R Fig. 8 - Unclamped Inductive Test Circuit (3) Formula used: T C = TJ - (Pd + PdREV) x R thJC ; Pd = Forward Power Loss = I F(AV) x VFM @ (IF(AV) / D) (see Fig. 6); Pd REV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 175BGQ045, 175BGQ045J PD-20710 rev. C 11/99 Ordering Information Table Device Code 175 BGQ 045 1 1 2 3 4 6 Current Rating Essential Part Number Voltage code: Code = VRRM none = PowIRtabTM standard J = Short Lead Version 2 3 J 4 Outline Table Case Style PowIRtabTM Dimensions in millimeters and (inches) www.irf.com 5 175BGQ045, 175BGQ045J PD-20710 rev. C 11/99 Outline Table Case Style PowIRtabTM "J" version Dimensions in millimeters and (inches) 6 www.irf.com 175BGQ045, 175BGQ045J PD-20710 rev. C 11/99 *************************************************** This model has been developed by Wizard SPICE MODEL GENERATOR (1999) ( International Rectifier Corporation ) contains Proprietary Information *************************************************** SPICE Model Diode is composed by a simple diode plus paralled VCG2T *************************************************** This model .SUBCKT 175bgq45 ANO CAT D1 ANO 1 DMOD (0.24359) *Define diode model . MODEL DMOD D ( IS=1.83192228095708E-04A, N=1.05013272757567, BV=45V, + IBV=0.318718355472911A,RS= 0.0003020516,CJO=5.36650017916966E-08, +VJ=0.773797902206145,XTI=2,EG=0.707245556720411) ***************************************************** * Implementation of VCG2T VX 1 2 DC 0V R1 2 CAT TRES 1E-6 .MODEL TRES RES (R=1, TC1=5.6216088199529) GP1 ANO CAT VALUE= {-ABS (I(VX)) *(EXP((((-2.339145E-03/ 5.621609)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-1))+1)*5.687601E-02*ABS(V(ANO,CAT)))-1)} ***************************************************** .ENDS 175bgq45 Thermal Model Subcircuit .SUBCKT 175bgq45T 5 1 CTHERM1 CTHERM2 CTHERM3 CTHERM4 RTHERM1 RTHERM2 RTHERM3 RTHERM4 5 4 3 2 5 4 3 2 4 3 2 1 4 3 2 1 1.71E+3 3.63E+2 3.23E+4 3.12E+5 3.24E-2 1.52E-1 4.08E-2 1.81E-4 .ENDS 175bgq45T WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. www.irf.com 7