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30LJQ150

30LJQ150

  • 厂商:

    IRF

  • 封装:

  • 描述:

    30LJQ150 - SCHOTTKY RECTIFIER - International Rectifier

  • 数据手册
  • 价格&库存
30LJQ150 数据手册
PD-94063A SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 30LJQ150 30 Amp, 150V Major Ratings and Characteristics Description/Features The 30LJQ150 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is Units packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and reverse A leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRFV 19500 quality conformance testing is available on source control drawings to TX, TXV and S quality levels. A V • • • • Hermetically Sealed Low Forward Voltage Drop High Frequency Operation Guard Ring for Enhanced Ruggedness and Long term Reliability • Surface Mount • Lightweight Characteristics IF(AV) VRRM IFSM @ tp = 8.3ms half-sine VF @ 30Apk, TJ =125°C 30LJQ150 30 150 140 0.92 TJ, Tstg Operating and storage -55 to 150 °C CASE STYLE CATHODE ANODE ANODE IR Case Style SMD-0.5 www.irf.com 1 6/28/01 30LJQ150 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 30LJQ150 150 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive Surge Current 140 A @ tp = 8.3 ms half-sine Limits 30 Units A Conditions 50% duty cycle @ TC = 84°C, square waveform Electrical Specifications Parameters VFM Max. Forward Voltage Drop See Fig. 1Q Limits 1.07 1.26 1.56 0.96 1.18 1.49 0.75 0.92 1.21 Units V V V V V V V V V mA mA mA pF nH @ 15A @ 30A @ 60A @ 15A @ 30A @ 60A @ 15A @ 30A @ 60A TJ = 25°C TJ = 100°C TJ = 125°C Conditions TJ = -55°C R TJ = 25°CR TJ = 125°C R I RM Max. Reverse Leakage Current See Fig. 2 Q 0.12 1.2 6.0 VR = rated VR R CT LS Max. Junction Capacitance Typical Series Inductance 310 4.8 VR = 5VDC ( 1MHz, 25°C ) R Measured from center of cathode pad to center of anode pad Thermal-Mechanical Specifications Parameters TJ Tstg Max.Junction Temperature Range Max. Storage Temperature Range to Case wt Weight (Typical) Die Size (Typical) Case Style Q Pulse Width < 300µs, Duty Cycle < 2% R Pins 2 and 3 externally tied together 1.0 125X125 SMD-0.5 g mils Limits Units -55 to 150 -55 to 150 1.82 °C °C °C/W DC operation Conditions RthJC Max. Thermal Resistance, Junction See Fig. 4 2 www.irf.com 30LJQ150 10 125°C Reverse Current - I R ( mA ) 1 100°C 75°C 100 0.1 25°C 0.01 0.001 0.0001 Instantaneous Forward Current - I F (A) 0 20 40 60 80 100 120 140 160 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage 10 Tj = 125°C 1000 Tj = 25°C Junction Capacitance - C (pF) T Tj = -55°C T J = 25°C 100 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Forward Voltage Drop - V F (V) Fig. 1 - Max. Forward Voltage Drop Characteristics 10 0 20 40 60 80 100 120 140 160 Reverse Voltage -VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage www.irf.com 3 30LJQ150 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01  0.0001 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01 1  PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics 180 160 Allowable Case Temprature - (°C) 30LJQ150 R thJC = 1.8°C/W 140 120 100 80 60 40 20 0 0 10 20 DC 30 40 50 Average Forward Current - I F(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 6/01 4 www.irf.com
30LJQ150 价格&库存

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