40MT120UHA

Bulletin I27194 rev. A 01/06 40MT120UHA 40MT120UHTA "HALF-BRIDGE" IGBT MTP Features Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery and Low VF • Square RBSOA • Al2O3 DBC • Optional SMD Thermistor (NTC) • Very Low Stray Inductance Design for High Speed Operation • UltraFast Non Punch Through (NPT) UltraFast NPT IGBT VCES = 1200V IC = 80A Benefits Applications • Rugged with UltraFast Performance • Benchmark Efficiency above 20KHz • Outstanding ZVS and Hard Switching Operation • Low EMI, requires Less Snubbing • Excellent Current Sharing in Parallel Operation • Direct Mounting to Heatsink • PCB Solderable Terminals • Very Low Junction-to-Case Thermal Resis tance • Optimized for Welding, UPS and SMPS MMTP Absolute Maximum Ratings Parameters V CES IC I I I CM LM Max 1200 @ T C = 22°C @ TC = 104°C 80 40 160 160 @ TC = 105°C 21 160 ± 20 2500 463 185 @ T C = 25°C @ TC = 100°C Units V A Collector-to-Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation (only IGBT) IF FM V GE V ISOL PD V W www.irf.com 1 40MT120UHA, 40MT120UHTA Bulletin I27194 rev. A 01/06 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters V(BR)CES ∆V(BR)CES/ ∆TJ V CE(ON) Min Typ Max Units Test Conditions +1.1 3.36 4.53 3.88 5.35 -12 35 0.4 0.2 250 1.0 10 ±250 3.59 4.91 4.10 5.68 6 V V/°C V V GE = 0 V, I C = 2 50µA V GE = 0 V, I C = 3 mA (25-125°C) = = = = = = = = = = = 1 5V, I C = 4 0A 1 5V, I C = 8 0A 1 5V, I C = 4 0A T J = 1 50°C 1 5V, I C = 8 0A TJ = 1 50°C V GE , I C = 5 00µA V GE , I C = 1 mA (25-125°C) 5 0V, I C = 4 0A, PW = 0 V, V CE = 1 200V, T J 0 V, V CE = 1 200V, T J 0 V, V CE = 1 200V, T J ± 2 0V 80µs = 2 5°C = 1 25°C = 1 50°C Collector-to-Emitter Breakdown Voltage 1200 Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage V GE(th) ∆ V GE(th) / ∆TJ g fe I CES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Transconductance Zero Gate Voltage Collector Current 4 V GE V GE V GE V GE V V CE mV/°C V CE S µA mA nA V CE V GE V GE V GE V GE I GES Gate-to-Emitter Leakage Current Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Min Typ Max Units Test Conditions 399 43 187 1142 1345 2487 1598 1618 3216 599 65 281 1713 2018 3731 2397 2427 4824 µJ nC I C = 40A V CC = 600V VGE = 15V VCC = 600V, IC = 40A VGE = 15V, Rg = 5Ω , L = 200µH T J = 25°C, Energy losses include tail and diode reverse recovery VCC = 600V, IC = 40A VGE = 15V, Rg = 5Ω , L = 200µH T J = 125°C, Energy losses include tail and diode reverse recovery VGE = 0V VCC = 30V f = 1.0 MHz T J = 150°C, IC = 160A VCC = 1000V, Vp = 1200V Rg = 5Ω, VGE = +15V to 0V T J = 150°C VCC = 900V, Vp = 1200V Rg = 5Ω, VGE = +15V to 0V µJ 5521 8282 380 570 171 257 full square pF SCSOA Short Circuit Safe Operating Area 10 µs 2 www.irf.com 40MT120UHA, 40MT120UHTA Bulletin I27194 rev. A 01/06 Diode Characteristics @ TJ = 25°C (unless otherwise specified) Parameters V FM Diode Forward Voltage Drop Min Typ Max Units Test Conditions 2.98 3.90 3.08 4.29 3.12 574 120 43 3.38 4.41 3.39 4.72 3.42 861 180 65 V I C = 4 0A I C = 8 0A I C = 4 0A, T J = 1 25°C I C = 8 0A, T J = 1 25°C I C = 4 0A, T J = 1 50°C VGE = 15V, Rg = 5Ω, L = 200µH VCC = 600V, IC = 40A T J = 1 25°C Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current µJ ns A Thermistor Specifications (40MT120UHTA only) Parameters R0 (1) β (1) (1) (2) Min Typ 30 4000 (2) Max Units Test Conditions kΩ K T0 = 25°C T0 = 25°C T1 = 85°C Temperatures in Kelvin Resistance Sensitivity index of the thermistor material R0 R1 T0,T1 are thermistor's temperatures = exp [β(1 T 1 0 T1 )], Thermal- Mechanical Specifications Parameters TJ TSTG R thJC R thCS Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink Clearance ( external Creepage ( shortest T Wt IGBT Diode Module shortest distance in air distance along external Min - 40 - 40 Typ Max 150 125 0.29 0.61 Units °C °C/ W 0.06 5.5 8 3 ± 10% 66 Nm g (oz) mm (Heatsink Compound Thermal Conductivity = 1 W/mK) between two terminals) surface of the insulating material between 2 terminals) Mounting torque to heatsink Weight compound. Lubricated threads (3) (3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the www.irf.com 3 40MT120UHA, 40MT120UHTA Bulletin I27194 rev. A 01/06 100 600 500 400 PD (W) 80 60 IC (A) 300 200 40 20 100 0 0 0 20 40 60 80 100 120 140 160 T C (°C) 0 20 40 60 80 100 120 140 160 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100 100 10 IC (A) 10 µs 100 µs IC (A) 10 1 1 10ms 0.1 DC 0.01 1 10 100 VCE (V) 1000 10000 10 100 1000 10000 VCE (V) Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V 4 www.irf.com 40MT120UHA, 40MT120UHTA Bulletin I27194 rev. A 01/06 160 140 120 100 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 160 140 120 100 VGE VGE VGE VGE VGE = 18V = 15V = 12V = 10V = 8.0V 80 60 40 20 0 0 2 4 6 VCE (V) 8 10 ICE (A) 80 60 40 20 0 0 2 4 6 VCE (V) 8 10 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs 160 140 120 100 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 100 80 IF (A) -40°C 25°C 125°C 80 60 40 20 0 0 2 4 6 VCE (V) 8 10 60 40 20 0 0.0 1.0 2.0 3.0 4.0 5.0 VF (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80µs Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs www.irf.com 5 40MT120UHA, 40MT120UHTA Bulletin I27194 rev. A 01/06 20 18 16 14 V CE (V) 20 ICE = 80A ICE = 40A ICE = 20A 18 16 14 V CE (V) ICE = 80A ICE = 40A ICE = 20A 12 10 8 6 4 2 0 5 10 V GE (V) 15 20 12 10 8 6 4 2 0 5 10 V GE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 18 16 14 V CE (V) 350 ICE = 80A ICE = 40A ICE = 20A 300 250 ICE (A) T J = 25°C T J = 125°C 12 10 8 6 4 2 0 5 10 V GE (V) 15 20 200 150 100 50 0 0 5 10 VGE (V) 15 20 Fig. 11 - Typical VCE vs. VGE TJ = 125°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 6 www.irf.com 40MT120UHA, 40MT120UHTA Bulletin I27194 rev. A 01/06 4800 4200 3600 1000 tdOFF Energy (µJ) 3000 2400 1800 1200 600 0 0 20 40 IC (A) 60 80 100 EON EOFF Swiching Time (ns) 100 tR tdON tF 10 0 20 40 60 80 100 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 125°C; L=250µH; VCE= 400V RG= 5Ω; VGE= 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 125°C; L=250µH; VCE= 400V RG= 5Ω; VGE= 15V 6000 10000 5000 EON EOFF Swiching Time (ns) tdOFF 1000 Energy (µJ) 4000 3000 100 2000 tdON tR tF 1000 0 10 20 30 40 50 60 10 0 10 20 30 40 50 60 R G ( Ω) RG ( Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L=250µH; VCE= 600V ICE= 40A; VGE= 15V Fig. 16 - Typ. Switching Time vs. R G TJ = 150°C; L=250µH; VCE= 600V ICE= 40A; VGE= 15V www.irf.com 7 40MT120UHA, 40MT120UHTA Bulletin I27194 rev. A 01/06 50 50 RG = 5.0Ω 40 RG = 10 Ω RG = 30 Ω R G = 50 Ω 40 IRR (A) IRR (A) 30 30 20 20 10 0 10 20 30 40 50 60 70 10 0 10 20 30 40 50 60 IF (A) R G ( Ω) Fig. 17 - Typical Diode IRR vs. IF TJ = 125°C Fig. 18 - Typical Diode IRR vs. RG TJ = 125°C; IF = 40A 50 45 40 35 5.0 4.5 4.0 3.5 60A 40A Q RR (µC) IRR (A) 3.0 2.5 2.0 1.5 50Ω 30Ω 10 Ω 20A 5.0 Ω 30 25 20 15 10 0 200 400 600 800 1000 1.0 0.5 0.0 0 200 400 600 800 1000 1200 diF /dt (A/µs) diF /dt (A/µs) Fig. 20 - Typical Diode QRR VCC= 600V; VGE= 15V;TJ = 125°C Fig. 19- Typical Diode I RR vs. diF/dt VCC= 600V; VGE= 15V; ICE= 40A; TJ = 125°C 8 www.irf.com 40MT120UHA, 40MT120UHTA Bulletin I27194 rev. A 01/06 10000 Cies Capacitance (pF) 1000 Coes 100 Cres 10 0 20 40 60 80 100 VCE (V) Fig. 21- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 16 14 12 10 VGE (V) 600V 8 6 4 2 0 0 100 200 300 400 500 Q G , Total Gate Charge (nC) Fig. 22 - Typical Gate Charge vs. VGE ICE = 5.0A; L = 600µH www.irf.com 9 40MT120UHA, 40MT120UHTA Bulletin I27194 rev. A 01/06 1 Thermal Response ( Z thJC ) 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τC τ τ2 τ3 τ3 0.01 Ri (°C/W) τi (sec) 0.043 0.001214 0.105 0.123 0.044929 1.1977 0.001 τ1 Ci= τi/Ri Ci= i/Ri 0.0001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 1E-005 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 τJ τJ τ1 R1 R1 τ2 R2 R2 τC τ1 τ2 τ Ri (°C/W) τi (sec) 0.024 0.00008 0.549 0.000098 0.01 Ci= τi/Ri Ci i /Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 10 www.irf.com 40MT120UHA, 40MT120UHTA Bulletin I27194 rev. A 01/06 L L 0 DUT 1K VCC 80 V Rg DUT 1000V Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit diode clamp / DUT Driver D C L 900V - 5V DUT / DRIVER Rg DUT VCC Fig. CT.3 - S.C. SOA Circuit Fig. CT.4 - Switching Loss Circuit www.irf.com 11 40MT120UHA, 40MT120UHTA Bulletin I27194 rev. A 01/06 Outline Table Electrical Diagram Dimensions in millimetres Note: unused terminals are not assembled in the package 12 www.irf.com 40MT120UHA, 40MT120UHTA Bulletin I27194 rev. A 01/06 Ordering Information Table Device Code 40 1 MT 120 2 3 U 4 H 5 T 6 A 7 1 2 3 4 5 6 - Current rating Essential Part Number Voltage code Speed/ Type Special Option (40 = 40A) (120 = 1200V) (U = Ultra Fast IGBT) Circuit Configuration (H = Half Bridge) none = no special option T = Thermistor 7 - A = Al2O3 DBC Substrate Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/06 www.irf.com 13