40TPS08A

Bulletin I2107 rev. F 03/03 SAFEIR Series 40TPS.. PHASE CONTROL SCR VT < 1.45V @ 40A ITSM = 500A VRRM = 800 - 1200V Description/ Features The 40TPS... SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125°C junction temperature. Low Igt parts available. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Major Ratings and Characteristics Characteristics IT(AV) Sinusoidal waveform IRMS VRRM/ VDRM Range ITSM VT dv/dt di/dt TJ @ 40 A, TJ = 25°C 55 800 - 1200 500 1.45 1000 100 - 40 to 125 A V A V V/µs A/µs °C Package Outline Units A 40TPS.. 35 TO-247AC www.irf.com 1 40TPS.. SAFEIR Series Bulletin I2107 rev. F 03/03 Voltage Ratings VRRM/ VDRM, max. repetitive Part Number 40TPS08 40TPS12 VRSM , maximum non repetitive peak reverse voltage V 900 1300 IRRM/ IDRM 125°C mA 10 peak and off-state voltage V 800 1200 Absolute Maximum Ratings Parameters IT(AV) Max. Average On-state Current IT(RMS) Max. Continuous RMS On-state Current As AC switch ITSM I2t Max. Peak One Cycle Non-Repetitive Surge Current Max. I 2t for Fusing 500 600 1250 1760 I √t 2 40TPS.. 35 55 Units A Conditions @ TC = 79° C, 180° conduction half sine wave A 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied Initial TJ = TJ max. A2s 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied Max. I √t for Fusing 2 12500 1.02 A √s V 2 t = 0.1 to 10ms, no voltage reapplied TJ = 125°C VT(TO)1 Low Level Value of Threshold Voltage VT(TO)2 High Level Value of Threshold Voltage rt1 rt2 VTM di/dt IH IL IRRM/ IDRM dv/dt Low Level Value of On-state Slope Resistance High Level Value of On-state Slope Resistance Max. Peak On-state Voltage Max. Rate of Rise of Turned-on Current Max. Holding Current Max. Latching Current Max. Reverse and Direct Leakage Current Max. Rate of Rise of Off-state Voltage 40TPS08 40TPS12 1.23 9.74 mΩ 7.50 1.85 100 150 300 0.5 10 500 1000 V A/µs mA @ 110A, TJ = 25°C TJ = 25°C mA TJ = 25°C TJ = 125°C VR = rated VRRM/ VDRM V/µs TJ = TJ max., linear to 80% VDRM , Rg-k = open 2 www.irf.com 40TPS.. SAFEIR Series Bulletin I2107 rev. F 03/03 Triggering Parameters PGM Max. peak Gate Power PG(AV) Max. average Gate Power IGM Max. peak Gate Current 40TPS.. 10 2.5 2.5 10 4.0 2.5 1.7 Units W Conditions A V TJ = - 40°C TJ = 25°C TJ = 125°C mA TJ = - 40°C TJ = 25°C TJ = 125°C TJ = 25°C, for 40TPS08A V mA TJ = 125°C, V DRM = rated value Anode supply = 6V resistive load - V GM Max. peak negative Gate Voltage VGT Max. required DC Gate Voltage to trigger IGT Max. required DC Gate Current to trigger 270 150 80 40 V GD IGD Max. DC Gate Voltage not to trigger Max. DC Gate Current not to trigger 0.25 6 Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range 40TPS.. - 40 to 125 - 40 to 125 0.6 Units °C Conditions RthJC Max. Thermal Resistance Junction to Case RthJA Max. Thermal Resistance Junction to Ambient RthCS Max. Thermal Resistance Case to Heatsink wt T Approximate Weight Mounting Torque Min. Max. Case Style °C/W DC operation 40 0.2 Mounting surface, smooth and greased 6 (0.21) 6 (5) 12 (10) g (oz.) Kg-cm (lbf-in) TO-247AC www.irf.com 3 40TPS.. SAFEIR Series Bulletin I2107 rev. F 03/03 Maximum Allowable Case Temperature (°C) Maximum Allowable Case T emperature (°C) 130 120 110 40T .. S PS eries R thJC (DC) = 0.6 °C/ W 130 120 110 40T .. S PS eries RthJC (DC) = 0.6 °C/ W Conduction Angle Conduction Period 100 90 80 70 30° 100 90 80 70 0 10 20 30 40 50 60 Average On-state Current (A) 30° 60° 60° 90° 120° 180° 90° 120° 180° DC 0 10 20 30 40 Average On-state Current (A) Fig. 1 - Current Rating Characteristics Maximum Avera g e On-state Power Loss (W) Fig. 2 - Current Rating Characteristics Maximum Averag e On-state Power Loss (W) 80 70 60 50 DC 180° 120° 90° 60° 30° 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 40 Avera ge On-sta te Current (A) 180° 120° 90° 60° 30° RMS Limit 40 RMSLimit 30 20 10 0 40T .. S PS eries TJ = 125°C 0 10 20 30 40 50 60 Conduction Angle Conduction Period 40T .. S PS eries TJ= 125°C Avera ge On-sta te Current (A) Fig. 3 - On-state Power Loss Characteristics 550 500 450 400 350 300 250 Fig. 4 - On-state Power Loss Characteristics 600 550 500 450 400 350 300 40T .. S PS eries Peak Half S Wave On-state Current (A) ine 40T .. S PS eries 1 10 100 Peak Half S Wa ve On-state Current (A) ine At Any R ted Load Condition And With a Rated V RRM Ap plied F ollowing Surge. Initia l TJ= 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s Ma ximum Non Rep etitive S urge Current Versus Pulse T rain Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage R eap p lied Rated V eap p lied RRM R 250 0.01 0.1 Pulse T in Duration (s) ra 1 Number Of Equal Amplitude Half Cycle Current Puls (N) es Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 4 www.irf.com 40TPS.. SAFEIR Series Bulletin I2107 rev. F 03/03 100 Instanta neous On-s te Current (A) ta 10 TJ= 25°C TJ= 125°C 40T .. S PS eries 1 0.5 1 1.5 2 Instantaneous On-state Voltag e (V) Fig. 7 - On-state Voltage Drop Characteristics 100 Instantaneous Gate Voltage (V) 10 Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)R ommended load line for ec = 6 µs (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) T = -40 °C J T = 25 °C J T = 125 °C J 1 VGD IGD 0.1 0.001 0.01 (4) (3) (2) (1) 40T .. PS 0.1 1 Frequenc y Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 8 - GateCharacteristics T ransient T hermal Impeda nc e Z thJC (°C/W) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 S teady S tate Value (DC Opera tion) S ingle Pulse 40T .. S PS eries 0.01 0.0001 0.001 0.01 S quare Wave Pulse Duration (s) 0.1 1 Fig. 9 - Thermal Impedance ZthJC Characteristics www.irf.com 5 40TPS.. SAFEIR Series Bulletin I2107 rev. F 03/03 Outline Table 15 .90 (0 .626 ) 15 .30 (0 .602 ) 5. 70 (0 .22 5) 5.30 ( 0.208) 20 .30 (0 .800 ) 19 .70 (0 .775 ) 5.50 ( 0.217) 4. 50 (0 .17 7) 1 2 3 ( 2 PLCS.) 3. 65 ( 0 .14 4) 3. 55 ( 0 .13 9) DIA. 5. 30 ( 0 .20 9) 4.70 ( 0.185) 2.5 ( 0.098) 1.5 ( 0.059) 14. 80 ( 0.583) 14 .20 (0 .559 ) 4. 30 ( 0 .17 0) 3. 70 ( 0 .14 5) 1. 40 ( 0 .05 6) 2. 20 (0 .08 7) M AX. 0.80 ( 0.032) 0. 40 ( 0 .21 3) 2. 40 (0 .09 5) M AX. 1. 00 ( 0 .03 9) 10. 94 ( 0.430) 10 .86 ( 0 .427 ) Dimensions in millimeters and inches Marking Information EXAMPLE: THIS IS A 40TPS12 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER 40TPS12 035H 56 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H 6 www.irf.com 40TPS.. SAFEIR Series Bulletin I2107 rev. F 03/03 Ordering Information Table Device Code 40 1 T 2 P 3 S 4 12 5 6 2 (A) 1 2 3 4 5 6 - Current Rating Circuit Configuration: T = Thyristor Package: T = TO-247 Type of Silicon: S = Standard Recovery Rectifier Voltage code: Code x 100 = VRRM None = Standard Igt selection A = Low Igt selection 40mA max. only for 40TPS08A 08 = 800V 12 = 1200V 1 (K) (G) 3 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/03 www.irf.com 7