40TPS16PBF

Bulletin I2183 11/04 SAFEIR Series 40TPS16PbF PHASE CONTROL SCR Lead-Free ("PbF" suffix) VT < 1.45V @ 40A ITSM = 500A VRRM = 1600V Description/ Features The 40TPS16PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125°C junction temperature. Low Igt parts available. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Major Ratings and Characteristics Characteristics IT(AV) Sinusoidal waveform IRMS VRRM/ VDRM ITSM VT dv/dt di/dt TJ @ 40 A, TJ = 25°C 55 1600 500 1.45 1000 100 - 40 to 125 A V A V V/µs A/µs °C Package Outline Units A Values 35 TO-247AC www.irf.com 1 40TPS16PbF SAFEIR Series Bulletin I2183 11/04 Voltage Ratings VRRM/ V DRM, max. repetitive Part Number 40TPS16PbF VRSM , maximum non repetitive peak reverse voltage V 1700 IRRM/ I DRM 125°C mA 10 peak and off-state voltage V 1600 Absolute Maximum Ratings Parameters IT(AV) Max. Average On-state Current 55 IT(RMS) Max. Continuous RMS On-state Current As AC switch ITSM 2 40TPS16 Units 35 A Conditions @ TC = 79° C, 180° conduction half sine wave Max. Peak One Cycle Non-Repetitive Surge Current 500 600 1250 1760 A 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied Initial TJ = TJ max. It Max. I t for Fusing 2 As 2 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied I √t 2 Max. I √t for Fusing 2 12500 1.02 A √s V 2 t = 0.1 to 10ms, no voltage reapplied TJ = 125°C VT(TO)1 Low Level Value of Threshold Voltage VT(TO)2 High Level Value of Threshold Voltage rt1 rt2 VTM di/dt IH IL IRRM / IDRM dv/dt Low Level Value of On-state Slope Resistance High Level Value of On-state Slope Resistance Max. Peak On-state Voltage Max. Rate of Rise of Turned-on Current Max. Holding Current Max. Latching Current Max. Reverse and Direct Leakage Current Max. Rate of Rise of Off-state Voltage 1.23 9.74 mΩ 7.50 1.85 100 150 300 0.5 10 1000 V A/µs mA @ 110A, TJ = 25°C TJ = 25°C TJ = 25°C TJ = 125°C V/µs VR = rated VRRM/ VDRM TJ = TJ max., linear to 80% V DRM , R g-k = open 2 www.irf.com 40TPS16PbF SAFEIR Series Bulletin I2183 11/04 Triggering Parameters PGM Max. peak Gate Power PG(AV) Max. average Gate Power IGM Max. peak Gate Current 40TPS16 Units 10 2.5 2.5 10 4.0 2.5 1.7 A V TJ = - 40°C TJ = 25°C TJ = 125°C mA TJ = - 40°C TJ = 25°C TJ = 125°C W Conditions - VGM Max. peak negative Gate Voltage VGT Max. required DC Gate Voltage to trigger Anode supply = 6V resistive load IGT Max. required DC Gate Current to trigger 270 150 80 40 TJ = 25°C, for 40TPS08A V mA TJ = 125°C, V DRM = rated value VGD IGD Max. DC Gate Voltage not to trigger Max. DC Gate Current not to trigger 0.25 6 Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range 40TPS16 Units - 40 to 125 - 40 to 125 0.6 °C/W DC operation °C Conditions RthJC Max. Thermal Resistance Junction to Case RthJA Max. Thermal Resistance Junction to Ambient RthCS Max. Thermal Resistance Case to Heatsink wt T Approximate Weight Mounting Torque Min. Max. Case Style Marking Device 40 0.2 Mounting surface, smooth and greased 6 (0.21) 6 (5) 12 (10) g (oz.) Kg-cm (lbf-in) TO-247AC 40TPS16 www.irf.com 3 40TPS16PbF SAFEIR Series Bulletin I2183 11/04 Maximum Allowable Case Temperature (°C) Maximum Allowable Case T emperature (°C) 130 120 110 40T .. S PS eries R thJC (DC) = 0.6 °C/ W 130 120 110 40T .. S PS eries RthJC (DC) = 0.6 °C/ W Conduction Angle Conduction Period 100 90 80 70 30° 100 90 80 70 0 10 20 30 40 50 60 Average On-state Current (A) 30° 60° 60° 90° 120° 180° 90° 120° 180° DC 0 10 20 30 40 Average On-state Current (A) Fig. 1 - Current Rating Characteristics Maximum Avera g e On-state Power Loss (W) Fig. 2 - Current Rating Characteristics Maximum Averag e On-state Power Loss (W) 80 70 60 50 DC 180° 120° 90° 60° 30° 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 40 Avera ge On-sta te Current (A) 180° 120° 90° 60° 30° RMS Limit 40 RMSLimit 30 20 10 0 40T .. S PS eries TJ = 125°C 0 10 20 30 40 50 60 Conduction Angle Conduction Period 40T .. S PS eries TJ= 125°C Avera ge On-sta te Current (A) Fig. 3 - On-state Power Loss Characteristics 550 500 450 400 350 300 250 Fig. 4 - On-state Power Loss Characteristics 600 550 500 450 400 350 300 40T .. S PS eries Peak Half S Wave On-state Current (A) ine 40T .. S PS eries 1 10 100 Peak Half S Wa ve On-state Current (A) ine At Any R ted Load Condition And With a Rated V RRM Ap plied F ollowing Surge. Initia l TJ= 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s Ma ximum Non Rep etitive S urge Current Versus Pulse T rain Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage R eap p lied Rated V eap p lied RRM R 250 0.01 0.1 Pulse T in Duration (s) ra 1 Number Of Equal Amplitude Half Cycle Current Puls (N) es Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 4 www.irf.com 40TPS16PbF SAFEIR Series Bulletin I2183 11/04 100 Instanta neous On-s te Current (A) ta 10 TJ= 25°C TJ= 125°C 40T .. S PS eries 1 0.5 1 1.5 2 Instantaneous On-state Voltag e (V) Fig. 7 - On-state Voltage Drop Characteristics 100 Instantaneous Gate Voltage (V) 10 Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)R ommended load line for ec = 6 µs (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) T = -40 °C J T = 25 °C J T = 125 °C J 1 VGD IGD 0.1 0.001 0.01 (4) (3) (2) (1) 40T .. PS 0.1 1 Frequenc y Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 8 - GateCharacteristics T ransient T hermal Impeda nc e Z thJC (°C/W) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 S teady S tate Value (DC Opera tion) S ingle Pulse 40T .. S PS eries 0.01 0.0001 0.001 0.01 S quare Wave Pulse Duration (s) 0.1 1 Fig. 9 - Thermal Impedance ZthJC Characteristics www.irf.com 5 40TPS16PbF SAFEIR Series Bulletin I2183 11/04 Outline Table 15 .90 (0 .626 ) 15 .30 (0 .602 ) 5. 70 ( 0 .22 5) 5.30 ( 0.208) 20 .30 ( 0 .800 ) 19 .70 ( 0 .775 ) 5.50 ( 0.217) 4. 50 ( 0 .17 7) 1 2 3 (2 PLCS.) 3. 65 (0 .14 4) 3. 55 (0 .13 9) DIA. 5. 30 ( 0 .20 9) 4.70 ( 0.185) 2.5 ( 0.098) 1.5 ( 0.059) 14. 80 ( 0.583) 14 .20 (0 .559 ) 4. 30 (0 .17 0) 3. 70 (0 .14 5) 1. 40 (0 .05 6) 2. 20 ( 0 .08 7) M AX . 0.80 ( 0.032) 0. 40 (0 .21 3) 2. 40 (0 .09 5) M AX. 2 (A) 1. 00 (0 .03 9) 10. 94 ( 0.430) 10 .86 ( 0 .427 ) Dimensions in millimeters and inches 1 (K) (G) 3 Marking Information EXAMPLE: THIS IS A 40TPS16 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN ASSEMBLY LINE "H" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER 40TPS16 P035H 56 57 DATE CODE P = LEAD-FREE YEAR 0 = 2000 WEEK 35 LINE H 6 www.irf.com 40TPS16PbF SAFEIR Series Bulletin I2183 11/04 Ordering Information Table Device Code 40 1 1 2 3 4 5 6 - T 2 P 3 S 4 16 PbF 5 6 Current Rating (40 = 40A) Circuit Configuration: T = Thyristor Package: T = TO-247 Type of Silicon: S = Standard Recovery Rectifier Voltage Rating (16 = 1600V) none = Standard Production PbF = Lead-Free Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 11/04 www.irf.com 7