45MT160P

Bulletin I27600 rev. C 11/00 45MT160P THREE PHASE CONTROLLED BRIDGE Power Module 40 A Features High thermal conductivity package, electrically insulated case 4000 VRMS isolating voltage Major Ratings and Characteristics Parameters IO @ TC IFSM 2 45MT160P 40 (36) 78 (85) 390 410 770 700 7700 1600 - 40 to 150 Diode Scr - 40 to 125 - 40 to 100 Units A °C A @ 50Hz @ 60Hz It @ 50Hz @ 60Hz A2 s I √t VRRM TSTG range TJ TJ range range 2 A2√s V °C 1 4 5MT160P Bulletin I27600 rev. C 11/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code VRRM, maximum repetitive peak reverse voltage V 1600 VRSM, maximum non-repetitive peak reverse voltage V 1700 VDRM, max. repetitive peak off-state voltage gate open circuit V 1600 IRRM/IDRM max. @ TJ = TJ max. mA 15 45MT160P 160 Forward Conduction Parameter IO ITSM Maximum DC output current @ Case temperature Maximum peak, one-cycle forward, non-repetitive on state surge current I2t Maximum I2t for fusing 45MT160P 40 (36) 78 (85) 390 410 330 345 770 700 540 500 Units Conditions A °C A t = 10ms t = 8.3ms t = 10ms t = 8.3ms A2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms A2√s V mΩ V A/µs mA Ipk = 30A, TJ = 25°C tp = 400µs single junction TJ = 25oC, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500mA, tr < 0.5 µs, tp > 6 µs TJ = 25oC, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load @ TJ max. No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Initial TJ = TJ max. 120° Rect conduction angle I2√t VT(TO) rt VTM di/dt IH IL Maximum I2√t for fusing Value of threshold voltage Low level value on-state Maximum on-state voltage drop Maximum non-repetitive rate of rise of turned on current Maximum Holding Current Maximum Latching Current 7700 0.98 11 1.33 150 200 400 t = 0.1 to 10ms, no voltage reapplied Blocking Parameter VINS RMS isolation voltage 45MT160P 4000 1000 Units Conditions V V/µs TJ = 25oC all terminal shorted f = 50Hz, t = 1s TJ = TJ max., linear to 0.67 VDRM, gate open circuit dv/dt Max. critical rate of rise of off-state voltage 2 4 5MT160P Bulletin I27600 rev. C 11/00 Triggering Parameter PGM IGM -VGT VGT Max. peak gate power 45MT160P 10 2.5 2.5 10 4.0 2.5 1.7 270 150 80 0.25 6 Units Conditions W TJ = TJ max. PG(AV) Max. average gate power Max. peak gate current Max. peak negative gate voltage Max. required DC gate voltage to trigger IGT Max. required DC gate current to trigger VGD I GD Max. gate voltage that will not trigger Max. gate current that will not trigger A V V TJ = - 40°C TJ = 25°C TJ = TJ max. TJ = - 40°C mA V mA TJ = 25°C TJ = TJ max. @ TJ = TJ max., rated VDRM applied Anode supply = 6V, resistive load Anode supply = 6V, resistive load Thermal and Mechanical Specifications Parameter TJ Tstg Maximum junction operating temperature range Maximum storage temperature range R thJC Maximum thermal resistance, junction to case 0.32 1.9 0.4 2.42 R thCS Maximum thermal resistance, case to heatsink T wt Mounting torque ± 10% to heatsink Approximate weight 60 g 4 Nm 0.1 K/W K/W DC operation per module DC operation per junction 120° Rect condunction angle per module 120° Rect condunction angle per junction Per module Mounting surface smooth, flat an greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 45MT160P - 40 to 125 - 40 to 100 -40 to 150 Units Conditions °C for diodes for Scr °C ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when device operate at different conduction angles than DC) Device 45MT160P Sinusoidal conduction @ TJ max. 180o 0.469 120o 0.55 90o 0.69 60o 1.005 30o 1.87 180o 0.289 Rectangular conduction @ TJ max. 120o 0.521 90o 0.72 60o 1.065 30o 1.891 Units K/W 3 4 5MT160P Bulletin I27600 rev. C 11/00 Ordering Information Table Device Code 4 1 5 2 MT 160 3 4 P 1 2 3 4 - Current rating code: 4 = 40 A (Avg) Circuit configuration code Essential part number Voltage code: Code x 10 = VRRM (See Voltage Ratings Table) Outline Table 1 2 3 4 5 7 8 All dimensions are in millimeters 4 4 5MT160P Bulletin I27600 rev. C 11/00 M axim um A llow ab le C a se Tem p e ra ture ( C ) 130 120 110 100 90 80 70 60 0 10 20 30 40 50 Total O utput C urre n t (A ) 120 (Rect) Instan taneous O n-state C urrent (A) 1 00 0 R thJ C (D C ) = 0.32 K/W TJ = 25 C T J = 12 5 C 10 0 10 1 0 2 4 6 8 10 12 Instan tan eous O n -sta te V olta g e (V ) Fig. 1 - Current Rating Characteristics Pea k Ha lf Sine W ave On -sta te C urrent (A) P ea k Ha lf Sine W a ve On -state C urren t (A) 36 0 34 0 32 0 30 0 28 0 26 0 24 0 22 0 20 0 18 0 16 0 1 10 100 N um b er O f E q ua l A m p litud e H a lf C yc le C urre nt P ulses (N ) Fig. 2 - On-state Voltage Drop Characteristics 400 380 360 340 320 300 280 260 240 220 200 180 Pe r Ju nction 0.1 Pu lse Tra in D uration (s) 1 160 0.0 1 M axim u m N o n R epe titive Su rg e C u rrent V ersus Pu lse Train D u ration . C o n tro l O f C o ndu ction M ay N ot Be M aintaine d. In itial TJ = 125 C N o V o ltage Re applie d Rate d V RRM Reapplie d A t A ny Rated Lo ad C o nditio n A n d W ith Rate d V RRM A pplie d Fo llow ing Surg e . Initia l T J = 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Per Jun ction Fig. 3 - Maximum Non-Repetitive Surge Current 14 0 M axim um T otal Pow er Loss (W ) 12 0 10 0 80 60 40 T J = 125 C 20 0 0 10 20 30 40 500 20 120 (Rect) 1 Fig. 4 - Maximum Non-Repetitive Surge Current R th SA = 0. 7 K/ K/ W W -D 1 .5 el ta 2K /W 3 K/ W K/ R W 5 K /W 10 K /W 40 60 80 100 120 14 0 Tota l O utput C urren t (A ) M a xim um A llow a ble A m b ien t Tem p era ture ( C ) Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink) 5 4 5MT160P Bulletin I27600 rev. C 11/00 T ra nsie n t Th e rm a l Im p e d an c e Z thJC (K/W ) 10 Stea d y Sta te Va lue R thJC p er junctio n = 1.9 K/W D C O p eratio n ) 1 0 .1 0 .0 0 1 0 .0 1 0 .1 1 10 10 0 Sq uare W a ve Pulse D ura tio n (s) Fig. 6 - Thermal Impedance Z thJC C haracteristics 100 In sta nta ne ous G a te V olta g e (V ) R e cta n g ula r ga t e p ulse a )R ec om m e n d ed lo a d lin e fo r ra te d d i/d t: 20 V , 30 oh m s tr = 0.5 s, tp >= 6 s b )R e co m m e nd ed loa d line for < = 30% ra ted d i/dt: 20 V , 65 o h m s tr = 1 s, t p >= 6 s (1) (2) (3) (4) (a) PGM PGM PGM PGM = = = = 100 W , tp = 500 s 50 W , tp = 1 m s 20 W , tp = 25 m s 10 W , tp = 5 m s 10 (b) TJ = -4 0 C T J = 25 C TJ = 1 25 C 1 VGD IG D (4 ) (3) (2) (1) 0 .1 0 .0 0 1 Fre qu e n c y Lim ite d b y PG (AV ) 0.1 1 10 100 10 0 0 0 .0 1 In sta n ta n e ou s G at e C u rre n t (A ) Fig. 7 - Gate Characteristics 6 4 5MT160P Bulletin I27600 rev. C 11/00 WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice http://www.irf.com 7