4GBL

PART OBSOLETE - Bulletin I2716 rev. F EOL18 06/03 4GBL Series 4.0 Amps Single Phase Full Wave Bridge Rectifier Features Diode chips are glass passivated Easy to assemble & install on P.C.B. High Surge Current Capability High Isolation between terminals and molded case (1500 VRMS) Lead free terminals solderable as per MIL-STD-750 Method 2026 Terminals suitable for high temperature soldering at 260°C for 8-10 secs UL E160375 approved IO(AV) = 4A VRRM = 50/ 800V Description These GBL Series of Single Phase Bridges consist of four glass passivated silicon junction connected as a Full Wave Bridge. These four junctions are encapsulated by plastic molding technique. These Bridges are mainly used in Switch Mode power supply and in industrial and consumer equipment. Major Ratings and Characteristics Parameters IO @ TC IFSM @ 50Hz @ 60Hz It 2 4GBL 4 50 150 158 113 104 50 to 800 - 55 to 150 Units A °C A A A2s A2s V o @ 50Hz @ 60Hz 4GBL VRRM TJ range C www.irf.com 1 4GBL Series Bulletin I2716 rev. F 06/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage VRRM, max repetitive VRMS, maximum Code peak rev. voltage RMS voltage TJ = TJ max. TJ = TJ max. V V 005 01 02 04 06 08 50 100 200 400 600 800 35 70 140 280 420 560 VRSM, max non-repetitive IRRM max. IRRM max. reverse voltage @ rated VRRM @ rated VRRM TJ = TJ max. TJ = 25°C TJ = 150°C V µA µA 75 150 275 500 725 900 5 5 5 5 5 5 400 400 400 400 400 400 4GBL Forward Conduction Parameters IO IFSM Maximum DC output current Maximum peak, one-cycle non-repetitive surge current, following any rated load condition and with rated VRRM reapplied I2t VFM IRM VRRM Maximum I 2 t for fusing, initial TJ = TJ max Maximum peak forward voltage per diode Typical peak reverse leakage curren t per diode Maximum repetitive peak reverse voltage range 50 to 800 V 113 104 0.975 5 V µA A2s t = 10ms t = 8.3ms TJ = 25 oC, IFM = 4A TJ = 25 oC, 100% VRRM 158 t = 8.3ms, 16.7ms TJ = 150°C 4GBL 4 3.2 150 Unit A Conditions TC = 50°C, Resistive & inductive load TC = 50°C, Capacitive load t = 10ms, 20ms Thermal and Mechanical Specifications Parameters TJ Tstg RthJC RthJA W Operating and storage temperature range Max. thermal resistance junction to case Thermal resistance, junction to ambient Approximate weight 2 (0.07) g (oz) 22 °C/ W DC rated current through bridge (1) 6.5 °C/ W DC rated current through bridge (1) 4GBL -55 to 150 Unit o Conditions C Note (1): Devices mounted on 75 x 75 x 3 mm aluminum plate 2 www.irf.com 4GBL Series Bulletin I2716 rev. F 06/03 Ordering Information Table Device Code 4 1 1 2 3 - GBL 2 08 3 Bridge current Basic Part Number Voltage Code: code x 100 = VRRM Outline Table All dimensions are in millimetres www.irf.com 3 4GBL Series Bulletin I2716 rev. F 06/03 Maximum Allowable Case Temperature (°C) 160 140 120 100 80 60 40 20 0 1 2 3 4 5 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 1000 4GBL Series Instantaneous Forward Current (A) 100 180˚ (Rect) 10 T J = 25˚C T J = 150˚C 180˚ (Sine) 1 4GBL Series 0.1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous Forward Voltage (V) Fig. 2 - Forward Voltage Drop Characteristics Maximum Average Forward Power Loss (W) Peak Half Sine Wave Forward Current (A) 7 6 5 4 3 2 1 0 0 1 2 3 4 Average Forward Current (A) Fig. 3 - Total Power Loss Characteristics 160 140 120 100 80 60 40 1 180˚ (Sine) 180˚ (Rect) At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 150˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 4GBL Series T J = 150˚C 4GBL Series 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 4 - Maximum Non-Repetitive Surge Current 4 www.irf.com 4GBL Series Bulletin I2716 rev. F 06/03 Data and specifications subject to change without notice. This product has been designed and qualified for Multiple Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 06/03 www.irf.com 5